Grasslin
Abstract: Grasslin turnus 501 TURNUS501 500C
Text: Grässlin UK LTD Tel: 01732 359888 Fax: 01732 354445 SPECIFICATION SHEET Turnus 501 PRODUCT/ORDER CODE Turnus 501 / TURNUS501 dusk/dawn controller The Turnus 501 is a photo-electric control device. The remote sensor which can be mounted up to 100 metres away from the controller detects ambient light level. The load is controlled by pre-setting on the
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TURNUS501
-200C
-300C
Grasslin
Grasslin turnus 501
TURNUS501
500C
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501 PHOTO
Abstract: Aurora Gx5.3 GU10 aurora gu10
Text: 3-ALTLED Quotation Regional Distributor INDOOR Category Model Name 1~100 101~500 501~5000 $ $ $ 14.07 13.67 13.28 $ 28 1 V1 Aurora - MR16 GX5.3 - 5W (M01) (180°) (TW/NW/WW/R/G/B) Aurora - MR16 GX5.3 - 7W (M02) (180°) (TW/NW/WW/R/G/B) 1~100 101~500 501~5000
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E27/E11/E14
E11/E14/E27
TW101
501 PHOTO
Aurora
Gx5.3
GU10
aurora gu10
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HAF-12399
Abstract: microcamera Ericsson spatial trigger rover interfacing diagram of fingerprint sensor ccd sensor star tracker contraves image sensor star tracker MA28140 Fingerprint Identification Module
Text: COMPACT CMOS VISION SYSTEMS FOR SPACE USE W.Ogiers, D.Uwaerts, B.Dierickx, D.Scheffer, G.Meynants, C.Truzzi IMEC, Kapeldreef 75, B-3001 Leuven, Belgium tel.: + 32 16 281 376 • fax: +32 16 281 501 ogiers@imec.be • http://www.imec.be/fuga/welcome.html Abstract
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B-3001
MA28140
AEFPAC/EUROPTO96/SPIE,
HAF-12399
microcamera
Ericsson spatial trigger
rover
interfacing diagram of fingerprint sensor
ccd sensor star tracker
contraves
image sensor star tracker
Fingerprint Identification Module
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microcontroller infineon
Abstract: infineon tricore
Text: FOR IMMEDIATE RELEASE CONTACT US: Chris Goodhart 408 501-6389 chris.goodhart@infineon.com CONTACT INTERNATIONAL: Katja Schlendorf +49 (89) 234-28480 katja.schlendorf@infineon.com Infineon Technologies Opens New Development Center in Bristol, England Expansion of Global Design Network Drives Forward Logic Initiative
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WIRING DIAGRAM OF VOLTMETER WITH PT
Abstract: rtd pt100 transmitter circuit using opamp transistors BC 459 cfs 455 f RTD with linearity, hysteresis, price RTV 501 cfs 455 j PT-100 385 4wire din 43760 PT-100 rtd
Text: 501 £ TWO-WIRE RTD TRANSMITTER Operator’s Manual MADE IN THE U.S.A. N E W P O R T Electronics, Inc. http://www.newportUS.com/manuals Additional products from S^IMEWPORT Electronics, Inc Counters Rate Meters Frequency Meters Timers PID Controllers Totalizers
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D-75392
10750ML-02
WIRING DIAGRAM OF VOLTMETER WITH PT
rtd pt100 transmitter circuit using opamp
transistors BC 459
cfs 455 f
RTD with linearity, hysteresis, price
RTV 501
cfs 455 j
PT-100 385 4wire
din 43760
PT-100 rtd
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Untitled
Abstract: No abstract text available
Text: Recommended screwdriver for Type 501, 502 and 507 Blade width 3 mm - 791966 page 107 The SPRINGCON product series consists of terminal blocks utilizing spring-clamp technology. Spring-clamp technology is defined as an electrical connection produced by terminating an individual,
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Untitled
Abstract: No abstract text available
Text: bericht Messung des Lichtverteilungskörpers Version: 1 Datum: 05. Dezember 2013 opsira GmbH Leibnizstraße 20 88250 Weingarten / Germany Südwestbank Ravensburg BLZ 600 907 00 Konto 828 009 007 Landesbank Baden-Württemberg BLZ 600 501 01 Konto 450 30 15
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DE78600907000828009007
DE04600501010004503015
DE201444158
-5000K-CRI90-1200mA-LeninaXW-EULUMDAT
GW6DGE50XFC
-5000K-CRI90-1200mA-LeninaW-symXY-IES
5000K-CRI90-1200mA-LeninaW-symXY-EULUMDAT
-5000K-CRI90-1200mA-LeninaW-IES
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8x8 VCSEL
Abstract: VCSEL array, 850nm 8x8 VCSEL array VCSEL array, 850nm, multi-mode CLASS III-A LASER 850nm VCSEL application avalon-photonics AP850 VCSEL arrays vcsel array
Text: AP850 501 850nm Multi-Mode VCSEL Array 250 µm 90 µm Preliminary datasheet - not released for production 120 µm 125 µm 15 µm wiring width 175 µm Features • 8x8 VCSEL ARRAY • 850nm WAVELENGTH RANGE WAVELENGTH • HIGH UNIFORMITY EMISSION • SYMMETRIC
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AP850
850nm
AP850
5018x8
850nm
8x8 VCSEL
VCSEL array, 850nm
8x8 VCSEL array
VCSEL array, 850nm, multi-mode
CLASS III-A LASER
850nm VCSEL application
avalon-photonics
VCSEL arrays
vcsel array
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8x8 VCSEL array
Abstract: Avalon Photonics vcsel array 8x8 VCSEL avalon-photonics 950-nm laser 950nm
Text: AP950 501 950nm Multi-Mode VCSEL Array 250 µm 90 µm Preliminary datasheet - not released for production 120 µm 125 µm 15 µm wiring width 175 µm Features • 8x8 VCSEL ARRAY • 950nm WAVELENGTH RANGE WAVELENGTH • HIGH UNIFORMITY EMISSION • SYMMETRIC
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AP950
950nm
AP950
5018x8
950nm
8x8 VCSEL array
Avalon Photonics
vcsel array
8x8 VCSEL
avalon-photonics
950-nm
laser 950nm
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SFH400
Abstract: Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPX 38 sfh 400 BPY 62
Text: SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 fet06092 fet06091 fet06090 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 501 10.95 SFH 400, SFH 401, SFH 402
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fet06092
fet06091
fet06090
SFH400
Q62702-P784
Q62702-P787
Q62702-P790
Q62702-P96
Q62702-P98
BPX 38
sfh 400
BPY 62
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EPITAXX
Abstract: GAAS FET AMPLIFIER for optical receiver EPITAXX ERM504 InGaas PIN photodiode, 1550 sensitivity TIA AGC application note TRANSIMpedance Amplifier ERM504FJ-S
Text: EPITAXX INC SOE T > m 33b040b 00001Û2 b « E P X E R M 501 ERM 5 0 4 EPITAXX Sonet OC-1 & OC-3 PIN-Transim pedance A m p lifie r Receiver M odules Features • InGaAs PIN Photodiode and GaAs Transimpedance Amplifier • Exceeds Sonet sensitivity and overload requirements
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33b0mDb
ERM501
ERM504
ERM504
ERM501/504RST
ERM501/504FJ
EPITAXX
GAAS FET AMPLIFIER for optical receiver
EPITAXX ERM504
InGaas PIN photodiode, 1550 sensitivity
TIA AGC application note
TRANSIMpedance Amplifier
ERM504FJ-S
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8 bit Flash-ADC
Abstract: 0.5 MIETEC CMOS Fuga15d 512x512 pixel random addressable image sensor die Fuga15d 512x512 FUGA15 512X512 Fuga15d 16 bit Flash-ADC photo type sensor most use in industry light sensor abstract
Text: Random addressable active pixel image sensors Bart Dierickx, Danny Scheffer, Guy Meynants, Werner Ogiers, Jan Vlummens IMEC Kapeldreef 75, B-3001 Leuven, Belgium tel.: +32 16 281 492 fax: +32 16 281 501 dierickx@imec.be http://www.imec.be/bo invited paper AEFPAC / EUROPTO96 / SPIE, Berlin, 10 oct 1996
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B-3001
EUROPTO96
8 bit Flash-ADC
0.5 MIETEC CMOS
Fuga15d 512x512 pixel random addressable image sensor die
Fuga15d 512x512
FUGA15
512X512
Fuga15d
16 bit Flash-ADC
photo type sensor most use in industry
light sensor abstract
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D-32423
Abstract: wago 750
Text: Fieldbus Independent I/O Modules 2 DO DC 24 V 0.5 A, High-Side Switching 750-501 Manual Version 1.0.4 ii • General Copyright 2006 by WAGO Kontakttechnik GmbH & Co. KG All rights reserved. WAGO Kontakttechnik GmbH & Co. KG Hansastraße 27 D-32423 Minden
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D-32423
D-32385
wago 750
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Untitled
Abstract: No abstract text available
Text: 050-501 Copper to Fiber Aggregation Media Converter Flange Mount 12 Channel RS422/RS485, 28VDC, Mighty Mouse Signal & Power , GHD (Fiber Optic) REV 2 DESCRIPTION DATE 1/19/2015 APPROVED BD THIS COPYRIGHTED DOCUMENT IS THE PROPERTY OF GLENAIR, INC. AND IS FURNISHED ON THE CONDITION THAT IT IS NOT TO
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RS422/RS485,
28VDC,
RS422/485
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3 PIN hall effect 506k
Abstract: Hall Effect Sensor Family 503K 509K hall effect IC 502K hall hall effect 506k 509A SOT89 hall sensor 504k hall sensor 506k hall 506A Magnetic Sensors marking code 506k sot89
Text: Hardware Documentation Data Sheet HAL 501.506, 508, 509, ® HAL 516.519, 523 Hall Effect Sensor Family Edition Nov. 27, 2003 6251-485-4DS HAL5xx DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction
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6251-485-4DS
3 PIN hall effect 506k
Hall Effect Sensor Family 503K
509K hall effect IC
502K hall
hall effect 506k
509A SOT89 hall sensor
504k hall sensor
506k hall
506A Magnetic Sensors
marking code 506k sot89
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Untitled
Abstract: No abstract text available
Text: Using the UCC28250EVM-501 User's Guide Literature Number: SLUU429B June 2010 – Revised December 2010 User's Guide SLUU429B – June 2010 – Revised December 2010 Half-Bridge DC-to-DC Converter With Primary-Side Control 1 Introduction This EVM is to help evaluating UCC28250 PWM device with primary-side control in DC-to-DC symmetrical
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UCC28250EVM-501
SLUU429B
UCC28250
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Untitled
Abstract: No abstract text available
Text: AVS SERIES 07211886 LOWPASS VIDEO FILTERS A L L E N A V IO N IC S, INC. 2 2 4 East Second Street • Mineola, N e w York 11 501 Tel: 516 2 4 8 - 8 0 8 0 ■ F a x : ( 5 1 6 ) 7 4 7 - 6 7 2 4 AVS SERIES ALLEN AVIONICS, INC. MINIATURE LOWPASS VIDEO FILTERS
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VM700
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td 880
Abstract: j 501 q
Text: •SUPER INTENSITY INFRARED LED Stanley's infrared LEDs feature the high intensity / high speed DN series. Four wavelengths 850, 880, 925 and 950 are available in a variety of package sizes to accomodate any design requirement. Matched with one of our phototransistors or pin photodiodes,
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NF318U
DNP324U
DNF324U
DNP325
DNP319
DNP331
td 880
j 501 q
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HgCdTe
Abstract: long range metal detector D05E BARNES ENGINEERING metal detector D10S H11E Nitrogen Relief Valve 15X10 Helium liquid Dewar
Text: Bulletin 2-360C BARNES . The Lead Tin Telluride Infrared Detector utilizes intrin sic photodetection in single-crystal, lead tin telluride PbSnTe material. Barnes now offers two types of PbSnTe detectors. The first type is liquid nitrogencooled and provides optimum sensitivity throughout the
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2-360C
T-41-41
H11E-
TWX/710-474-3367
Telex/965921
HgCdTe
long range metal detector
D05E
BARNES ENGINEERING
metal detector
D10S
H11E
Nitrogen Relief Valve
15X10
Helium liquid Dewar
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FCI-125G-010HR
Abstract: FCI-125G-016HR FCI-125G-012HR
Text: 850nm, 1.25Gbps Large Active Area and High Speed Silicon Photodiodes APPLICATIONS FEATURES  High  Silicon Photodiodes Responsivity  Large Diameter Sensing Area  Low Capacitance @ 3.3V  Low Cost Speed Optical Communications  Single/Multi-Mode Fiber Optic
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850nm,
25Gbps
850nm.
850nm-1
25gbps
FCI-125G-010HR
FCI-125G-016HR
FCI-125G-012HR
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DN 106 stanley
Abstract: No abstract text available
Text: •SUPER INTENSITY INFRARED LED Stanley's infrared LEDs feature the high intensity / high speed DN series. Three wavelengths 850, 880 and 950 are available in a variety of package sizes to accomodate any design requirement. Matched with one of our phototransistors or pin photodiodes, the
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Untitled
Abstract: No abstract text available
Text: •SUPER INTENSITY INFRARED LED Sensor !><! Stanley's infrared LEDs feature the high intensity / high speed DN series. Three wavelengths 850, 880 and 950 are available in a variety of package sizes to accomodate any design requirement. Matched with one of our phototransistors or pin photodiodes, the
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Untitled
Abstract: No abstract text available
Text: InGaAs 80 and 200 um Avalanche Photodiode MICROELECTRONICS 264-339767-VAR Description Based on an industry proven design and improved for fast overload recovery, the 264-339767 InGaAs APDs have a high QE Quantum Efficiency over the band of 1000 to 1600 nm. The APD’s junction offers more than 1dB optical
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264-339767-VAR
MIL-PRF-38534
Opto767-VAR
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33H8R
Abstract: No abstract text available
Text: CONNECTORS | CONNETTORI version 110125 For electrovalves, style A, 2p+2G, female, Per elettrovalvole, stile A, 2p+2T, femmina, with cable con cavo EN175301-803 style A square connector, former DIN 43650-A , ISO 4400; built-in gasket; wide cable choice; single head or extension cable;
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EN175301-803
3650-A)
33H8R
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