Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR44N50Q3
250ns
ISOPLUS247
E153432
44N50Q3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR44N50Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR44N50Q3
250ns
ISOPLUS247
E153432
44N50Q3
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IXFR44N50Q3
Abstract: 44N50Q3
Text: Preliminary Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR44N50Q3
250ns
ISOPLUS247
E153432
44N50Q3
IXFR44N50Q3
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APT5017
Abstract: APT5017HLL
Text: APT5017HLL 500V 25A 0.170W POWER MOS 7 MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT5017HLL
O-258
O-258
APT5017
APT5017HLL
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IRFY420C
Abstract: No abstract text available
Text: IRFY420C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 500V ID = 25A RDS(ON) = 0.23Ω Ω 1.0 (0.039)
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IRFY420C
O257AB
O257AB
O220M)
13-Sep-02
IRFY420C
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4200pF
Abstract: IRFY420
Text: IRFY420 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 500V ID = 25A RDS(ON) = 0.23Ω Ω 1.0 (0.039)
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IRFY420
O257AB
O257AB
O220M)
13-Sep-02
4200pF
IRFY420
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APT0406
Abstract: APT0502
Text: APTM50H15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control
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APTM50H15FT1G
APT0406
APT0502
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APT0406
Abstract: APT0502
Text: APTM50A15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Phase leg MOSFET Power Module 5 6 Application 11 • • • • Q1 7 8 Features 3 4 Q2 NTC • 9 10 1 2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies
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APTM50A15FT1G
APT0406
APT0502
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Untitled
Abstract: No abstract text available
Text: APTM50A15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Phase leg MOSFET Power Module 5 6 Application 11 • • • • Q1 7 8 Features 3 4 Q2 NTC • 9 10 1 2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies
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APTM50A15FT1G
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APT0406
Abstract: APT0502
Text: APTM50A15UT1G VDSS = 500V RDSon = 150mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Phase leg MOSFET Power Module 5 6 Application 11 • • • • Q1 7 8 Features 3 4 Q2 NTC • 9 10 1 2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies
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APTM50A15UT1G
APT0406
APT0502
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Untitled
Abstract: No abstract text available
Text: APTM50H15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 2 5 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control
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APTM50H15FT1G
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APT0406
Abstract: APT0502
Text: APTM50H15UT1G VDSS = 500V RDSon = 150mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control
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APTM50H15UT1G
APT0406
APT0502
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500V 25A Mosfet
Abstract: by-pass
Text: TELEDYNE MICROELECTRONICS Power Hybrid, MOSFET, H-Bridge/Quad P/N 2294760 DESCRIPTION FEATURES The 2294760 contains four N-channel Enhancement ❖ Isolated metal hermetic power case mode high voltage power MOSFETs. Each output is coupled with a blocking Schottky diode to the drain
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16-pin
500V 25A Mosfet
by-pass
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500V 25A Mosfet
Abstract: 2000 PWM hybrid
Text: TELEDYNE MICROELECTRONICS Power Hybrid, MOSFET, H-Bridge/Quad P/N 2294760 2 16 2947 1 60 S -2 YY ERN 70 WW O MA XX DE XX IN B e U. S.A O . DESCRIPTION FEATURES The 2294760 contains four N-channel Enhancement ❖ Isolated metal hermetic power case mode high voltage power MOSFETs. Each output is
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16-pin
500V 25A Mosfet
2000 PWM hybrid
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500V 25A Mosfet
Abstract: FBA50CA50 "MOSFET Module" FBA50CA45 B220G mosfet 500V 50A
Text: MOSFET MODULE FBA50CA45/50 UL;E76102 M FBA50CA45/50 is a dual power MOSFET module designed for fast swiching 2 devices are serial connected. The applications of high voltage and current. mounting base of the module is electrically isolated from semiconductor elements for
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FBA50CA45/50
E76102
FBA50CA45/50
700ns
FBA50CA45
FBA50CA50
500V 25A Mosfet
FBA50CA50
"MOSFET Module"
B220G
mosfet 500V 50A
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FCA50CC50
Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
Text: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the
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FCA50CC50
E76102
FCA50CC50
trr100nsreverse
30max
31max
50msec10sec
50sec50msec
RL4R
FBA50CA45
FBA50CA50
FBA75CA45
FBA75CA50
FCA75CC50
SF100
107506
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FBA50CA45
Abstract: FBA50CA50
Text: MOSFET MODULE FBA50CA45/50 UL;E76102 （M） FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. （2 devices are serial connected.） The mounting base of the module is electrically isolated from semiconductor elements for
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FBA50CA45/50
E76102
FBA50CA45/50
VDSS500V
31max
30max
FBA50CA50
FBA50CA45
FBA50CA50
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FCA50CC50
Abstract: IG2U
Text: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the
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FCA50CC50
E76102
FCA50CC50
trr100nsreverse
30max
31max
50sec-10sec
50msec-10sec
00A/s
IG2U
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"MOSFET Module"
Abstract: FBA50CA50 FBA50CA45
Text: MOSFET MODULE FBA50CA45/50 UL;E76102 （M） FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. （2 devices are serial connected.） The mounting base of the module is electrically isolated from semiconductor elements for
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FBA50CA45/50
E76102
FBA50CA45/50
VDSS500V
31max
30max
"MOSFET Module"
FBA50CA50
FBA50CA45
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Untitled
Abstract: No abstract text available
Text: TELEDYNE MICROELECTRONICS 47E D • 0^10103 0000L21 fl3fl ■ TEH TELEDYNE MICROELECTRONICS Power Hybrid, Full Bridge P/N 2294760 DESCRIPTION The 2294760 Power Hybrid contains four N-Channel Enhancement mode high voltage power MOSFETS. Each is coupled with a blocking Schottky diode on the drain and a
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OCR Scan
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0000L21
16-pin
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500V 25A Mosfet
Abstract: IRFV420 IRFY420
Text: bOE D m Ô1331Ô7 OODOSbO 55^ •SMLB SEMELAB PLC { SEMELAB IRFY420 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS □r ï£ FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE
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T0220
T0220M
T0220SM
300/is,
LE174JB
500V 25A Mosfet
IRFV420
IRFY420
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE FCA50CC50 UL;E76102 M F C A 5 0 C C 5 0 is a dual power M O S F E T module designed for fast switching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink con
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OCR Scan
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FCA50CC50
E76102
100ns
7T11E43
DDD1117
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FCA50BC50
Abstract: 500V 25A Mosfet
Text: MOSFET MODULE FCA50BC50 U L ;E 76102 M F C A 5 0 B C 5 0 is a dual power MOSFET module designed for fast switching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is elecjtjcally isolated from semiconductor elements for simple h g atsl^cp o n struction.
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OCR Scan
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FCA50BC50
FCA50BC50
100ns
E76102
50mse
000EE33
500V 25A Mosfet
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12v transformer
Abstract: No abstract text available
Text: f f i H a r r is U U S E M I C O N D U C T O R FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRF150D,
FRF150R,
FRF150H
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRI50UIS
12v transformer
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