50/TRANSISTOR 955 E Search Results

50/TRANSISTOR 955 E

Abstract: TCA955 TRANSISTOR 955 E
Contextual Info: 47E » • ñE35bOS DÜ3S2bl ô « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Speed Controller TCA 955 Bipolar 1C Features • • High control accuracy Large supply voltage range Typical Applications Speed control in • • • • • Tape recorders Cassette recorders

TRANSISTOR 955 E

Abstract: VPS05163 50/TRANSISTOR 955 E
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration VPS05163

TRANSISTOR 955 E

Abstract: VPS05163
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration

transistor 9527

Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

transistor 131-6

Abstract: 4139 temperature TRANSISTOR K 314 p945
Contextual Info: /'2#5HJXODWRUV#ZLWK#D#:DWFKGRJ 7LPHU 584359#6 5,(6 $33/,&$7,21#0$18$/ NO. EA-072-0006 LDO Regulators with a Watchdog Timer 584359#6(5,(6 OUTLINE ,# ,&V# ZLWK# KLJK# DFFXUDF\# RXWSXW#YROWDJH

500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Contextual Info: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a

BTP955L3

Contextual Info: Spec. No. : C606L3 Issued Date : 2005.02.04 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage

Contextual Info: ERICSSON ^ PTB 20219 70 Watts, 925 - 960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and

lc 945 p transistor NPN TO 92

Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
Contextual Info: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.

lc 945 transistor

Contextual Info: ERICSSON ^ PTB 20105 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP

transistor 4120

Abstract: AZ100LVEL58T LV58 MC100LVEL58 AZ100LVEL58D AZ100LVEL58
Contextual Info: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors

transistor BC 945

Abstract: RA20H8994M 1000v 200w Transistor RA20H8994M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to

microtek

Abstract: AZ100LVEL58 AZ100LVEL58D AZ100LVEL58T LV58 MC100LVEL58 LVEL58 362-0 transistor
Contextual Info: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors

Contextual Info: ERICSSON ^ PTB 20135 85 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP

KV58

Contextual Info: MC100LVEL58 3.3V ECL 2:1 Multiplexer The MC100LVEL58 is a 2:1 multiplexer. The device is pin and functionally equivalent to the EL58 and works from a 3.3 V supply. With AC performance similar to the EL58 device, the LVEL58 is ideal for low voltage applications which require the ultimate in AC

Contextual Info: MC100LVEL59 3.3V ECL Triple 2:1 Multiplexer The MC100LVEL59 is a 3.3 V triple 2:1 multiplexer with differential outputs. The output data of the multiplexers can be controlled individually via the select inputs or as a group via the common select input. The flexible selection scheme makes the device

transistor BD 2420

Abstract: MARKING QB
Contextual Info: MC100LVEL12 3.3V ECL Low Impedance Driver The MC100LVEL12 is a low impedance drive buffer. With two pairs of OR/NOR outputs the device is ideally suited for high drive applications such as memory addressing. The device is functionally equivalent to the EL12 device and operates from a 3.3 V power supply.

Contextual Info: MC100EL59 5V ECL Triple 2:1 Multiplexer The MC100EL59 is a triple 2:1 multiplexer with differential outputs. The output data of the multiplexers can be controlled individually via the select inputs or as a group via the common select input. The flexible selection scheme makes the device useful for both data path and random

KVL01

Contextual Info: MC100LVEL01 3.3V ECL 4−Input OR/NOR The MC100LVEL01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device and works from a 3.3 V supply. With AC performance similar to the EL01 device, the LVEL01 is ideal for low voltage applications which require the ultimate in

Contextual Info: ERICSSON ^ PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor D e s c rip tio n The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP

Contextual Info: 2SC D B A23SbDS □ ÜQH'iÜfc» S « S I E G _ „ _ , , J ~ i ' r — t '- S NPN Silicon Planar Transistor 2 N 3019 _ SIEMENS A K T I E N G E S E L L S C H A F -2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case 5 C 3 DIN 41873 .

RA20H8994M

Abstract: RA20H8994M-01 transistor mosfet 536 hatfield attenuator
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to

Contextual Info: MC100LVE111 3.3V ECL 1:9 Differential Clock Driver The MC100LVE111 is a low skew 1-to-9 differential driver, designed with clock distribution in mind. The MC100LVE111’s function and performance are similar to the popular MC100E111, with the added feature of low voltage operation. It accepts one signal input, which can be

transistor ft 960

Abstract: IC 7108
Contextual Info: ERICSSO N 0 PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN. com mon em itter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP