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    5.1 CHANNEL POWER AMPLIFIER CIRCUIT DIAGRAM Search Results

    5.1 CHANNEL POWER AMPLIFIER CIRCUIT DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd

    5.1 CHANNEL POWER AMPLIFIER CIRCUIT DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c1089

    Abstract: No abstract text available
    Text: EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram GND • • • • • • 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package


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    EC1089 OT-89 EC1089 c1089 PDF

    ALPHA CROSS REFERENCE

    Abstract: No abstract text available
    Text: HMC818LP4E v01.0809 Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB • BTS & Infrastructure


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    HMC818LP4E HMC818LP4E 35Ohm ALPHA CROSS REFERENCE PDF

    5.1 channel power amplifier circuit diagram

    Abstract: HMC817-LP4E 3g phone CIRCUIT diagram
    Text: HMC817LP4E v00.1108 Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Typical Applications Features The HMC817LP4E is ideal for: Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G Gain: 16 dB • BTS & Infrastructure


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    HMC817LP4E HMC817LP4E 5.1 channel power amplifier circuit diagram HMC817-LP4E 3g phone CIRCUIT diagram PDF

    5.1 channel power amplifier circuit diagram

    Abstract: No abstract text available
    Text: HMC818LP4E v00.1108 LOW NOISE AMPLIFIERS - SMT 8 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB • BTS & Infrastructure


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    HMC818LP4E HMC818LP4E 16mm2 HMC818LP4 5.1 channel power amplifier circuit diagram PDF

    EC1089

    Abstract: EC1089B-G EC1089B-PCB1900 EC1089B-PCB2140 EC1089B-PCB900 JESD22-A114 470+ohm+resistor 3000 watt power amplifier circuit diagram
    Text: EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier Product Features • • • • • • Functional Diagram Product Description GND 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package


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    EC1089 OT-89 EC1089 EC1089B-G EC1089B-PCB1900 EC1089B-PCB2140 EC1089B-PCB900 JESD22-A114 470+ohm+resistor 3000 watt power amplifier circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC818LP4E v01.0809 LOW NOISE AMPLIFIERS - SMT 8 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB • BTS & Infrastructure


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    HMC818LP4E 16mm2 HMC818LP4E PDF

    hittite cross

    Abstract: HMC816LP4E
    Text: HMC817LP4E v00.1108 LOW NOISE AMPLIFIERS - SMT 8 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Typical Applications Features The HMC817LP4E is ideal for: Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G Gain: 16 dB • BTS & Infrastructure


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    HMC817LP4E HMC817LP4E hittite cross HMC816LP4E PDF

    5.1 channel power amplifier circuit diagram

    Abstract: High IP3 Low-Noise Amplifier HMC816LP4E H816 HMC816
    Text: HMC816LP4E v00.1108 LOW NOISE AMPLIFIERS - SMT 8 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Applications Features The HMC816LP4E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB • BTS & Infrastructure


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    HMC816LP4E HMC816LP4E 5.1 channel power amplifier circuit diagram High IP3 Low-Noise Amplifier H816 HMC816 PDF

    Untitled

    Abstract: No abstract text available
    Text: EC1089 InGaP HBT Gain Block Product Features • • • • • • Functional Diagram Product Description GND 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package Applications


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    EC1089 OT-89 EC1089 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: EC1089 InGaP HBT Gain Block Product Features • • • • • • Functional Diagram Product Description GND 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package Applications


    Original
    EC1089 OT-89 EC1089 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC816LP4E v00.1108 Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Applications Features The HMC816LP4E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB • BTS & Infrastructure


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    HMC816LP4E HMC816LP4E PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC818LP4E v01.0809 Amplifiers - low Noise - smT 7 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HmC818lp4e is ideal for: low Noise figure: 0.85 dB • Cellular/3G and lTe/wimAX/4G High Gain: 20.5 dB • BTs & infrastructure


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    HMC818LP4E HMC818LP4E 16mm2 HMC818LP4 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC817LP4E v00.1108 Amplifiers - low Noise - smT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Typical Applications Features The HmC817lp4e is ideal for: Noise figure: 0.5 dB • Cellular/3G and lTe/wimAX/4G Gain: 16 dB • BTs & infrastructure


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    HMC817LP4E HMC817LP4E PDF

    Untitled

    Abstract: No abstract text available
    Text: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


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    AP601 AP601 JESD22-A114 JESD22-C101 J-STD-020 1-800-WJ1-4401 PDF

    AP601

    Abstract: AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114
    Text: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


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    AP601 AP601 JESD22-A114 JESD22-C101 J-STD-020 1-800-WJ1-4401 AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC816LP4E v00.1108 Amplifiers - low Noise - smT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Applications Features The HmC816lp4e is ideal for: low Noise figure: 0.5 dB • Cellular/3G and lTe/wimAX/4G High Gain: 22 dB • BTs & infrastructure


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    HMC816LP4E HMC816LP4E PDF

    marking c7 sot-89

    Abstract: No abstract text available
    Text: EC1089 The Communications Edge TM InGaP HBT Gain Block Product Information Product Features Functional Diagram Product Description GND • • • • • • 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Available in SOT-89 and


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    EC1089 OT-89 EC1089 1-800-WJ1-4401 marking c7 sot-89 PDF

    HMC452ST89E

    Abstract: Rogers 4350 datasheet HMC452ST89 h452
    Text: HMC452ST89 / 452ST89E v01.0205 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Designer’s Kit Available Typical Applications Features The HMC452ST89 / HMC452ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm


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    HMC452ST89 452ST89E HMC452ST89E CDMA2000 HMC-DK002 HMC452ST89 Rogers 4350 datasheet h452 PDF

    Rogers 4350 datasheet

    Abstract: HMC452ST89 HMC452ST89E h452
    Text: HMC452ST89 / 452ST89E v01.0205 AMPLIFIERS - SMT 8 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC452ST89 / HMC452ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm • GSM, GPRS & EDGE


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    HMC452ST89 452ST89E HMC452ST89E CDMA2000 HMC452ST89 Rogers 4350 datasheet h452 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


    Original
    AP601 AP601 JESD22-A114 JESD22-C101 J-STD-020 1-800-WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: EC1089 The Communications Edge TM InGaP HBT Gain Block Product Information Product Features Functional Diagram Product Description GND • • • • • • 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Available in SOT-89 and


    Original
    EC1089 OT-89 EC1089 1-800-WJ1-4401 PDF

    KMPSa92

    Abstract: antilarsen volume potentiometer 1k ohm handsfree chip CIRCUITS OF TRANSISTOR BC 547 telephone speech circuit sidetone cancellation m4 atx Handsfree full duplex differential amplifier 2n5551
    Text: Preliminary AS2520/21/20B/21B Telephone Speech Circuit with Loudhearing and Handsfree Austria Mikro Systeme International AG General Description Key Features ❑ Line/speech circuit, loudhearing, handsfree and dc/dc converter on one 28 pin CMOS chip ❑ Operating range from 13 to 100 mA down to 5


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    AS2520/21/20B/21B KMPSa92 antilarsen volume potentiometer 1k ohm handsfree chip CIRCUITS OF TRANSISTOR BC 547 telephone speech circuit sidetone cancellation m4 atx Handsfree full duplex differential amplifier 2n5551 PDF

    XR-2276

    Abstract: XR2276CP XR2276 XR-2203 XR-2276CP XR2203 XR-3403 circuit fluorescent tube 24v AUDIO LEVEL INDICATOR XR 220 12 z
    Text: Z * EX4R XR-2276 Bar Graph Display Generator G E N ER A L DESCRIPTION FUN CTIO N AL BLO CK DIAGRAM The XR-2276 is a 12-point logarithmic bar graph display generator designed for interfacing with fluorescent dis­ plays. The device’s twelve comparators, internally bi­


    OCR Scan
    XR-2276 XR-2276 12-point XR2276 12point mw/166 XR-2276: XR-2203 XR2276CP XR-2276CP XR2203 XR-3403 circuit fluorescent tube 24v AUDIO LEVEL INDICATOR XR 220 12 z PDF

    antilarsen

    Abstract: handsfree chip AUSTRIA MIKRO SYSTEME INTERNATIONAL Save
    Text: Preliminary AS2520/21/20B/21B Telephone Speech Circuit with Loudhearing and Handsfree Austria Mikro Systeme International AG General Description Key Features □ Line/speech circuit, loudhearing, handsfree and dc/dc converter on one 28 pin CMOS chip □ Operating range from 13 to 100 mA down to 5


    OCR Scan
    AS2520/21/20B/21B AS2521 AS2521B antilarsen handsfree chip AUSTRIA MIKRO SYSTEME INTERNATIONAL Save PDF