5.1 CHANNEL POWER AMPLIFIER CIRCUIT DIAGRAM Search Results

XR-2276

Abstract: XR2276CP XR2276 XR-2203 XR-2276CP XR2203 XR-3403 circuit fluorescent tube 24v AUDIO LEVEL INDICATOR XR 220 12 z
Contextual Info: Z * EX4R XR-2276 Bar Graph Display Generator G E N ER A L DESCRIPTION FUN CTIO N AL BLO CK DIAGRAM The XR-2276 is a 12-point logarithmic bar graph display generator designed for interfacing with fluorescent dis­ plays. The device’s twelve comparators, internally bi­

c1089

Contextual Info: EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram GND • • • • • • 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package

ALPHA CROSS REFERENCE

Contextual Info: HMC818LP4E v01.0809 Amplifiers - Low Noise - SMT 7 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB • BTS & Infrastructure

5.1 channel power amplifier circuit diagram

Abstract: HMC817-LP4E 3g phone CIRCUIT diagram
Contextual Info: HMC817LP4E v00.1108 Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Typical Applications Features The HMC817LP4E is ideal for: Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G Gain: 16 dB • BTS & Infrastructure

5.1 channel power amplifier circuit diagram

Contextual Info: HMC818LP4E v00.1108 LOW NOISE AMPLIFIERS - SMT 8 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB • BTS & Infrastructure

EC1089

Abstract: EC1089B-G EC1089B-PCB1900 EC1089B-PCB2140 EC1089B-PCB900 JESD22-A114 470+ohm+resistor 3000 watt power amplifier circuit diagram
Contextual Info: EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier Product Features • • • • • • Functional Diagram Product Description GND 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package

Contextual Info: HMC818LP4E v01.0809 LOW NOISE AMPLIFIERS - SMT 8 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC818LP4E is ideal for: Low Noise Figure: 0.85 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 20.5 dB • BTS & Infrastructure

hittite cross

Abstract: HMC816LP4E
Contextual Info: HMC817LP4E v00.1108 LOW NOISE AMPLIFIERS - SMT 8 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz Typical Applications Features The HMC817LP4E is ideal for: Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G Gain: 16 dB • BTS & Infrastructure

5.1 channel power amplifier circuit diagram

Abstract: High IP3 Low-Noise Amplifier HMC816LP4E H816 HMC816
Contextual Info: HMC816LP4E v00.1108 LOW NOISE AMPLIFIERS - SMT 8 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Applications Features The HMC816LP4E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB • BTS & Infrastructure

Contextual Info: EC1089 InGaP HBT Gain Block Product Features • • • • • • Functional Diagram Product Description GND 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package Applications

Contextual Info: EC1089 InGaP HBT Gain Block Product Features • • • • • • Functional Diagram Product Description GND 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package Applications

Contextual Info: HMC816LP4E v00.1108 Amplifiers - Low Noise - SMT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Applications Features The HMC816LP4E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB • BTS & Infrastructure

Contextual Info: HMC818LP4E v01.0809 Amplifiers - low Noise - smT 7 GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HmC818lp4e is ideal for: low Noise figure: 0.85 dB • Cellular/3G and lTe/wimAX/4G High Gain: 20.5 dB • BTs & infrastructure

antilarsen

Abstract: handsfree chip AUSTRIA MIKRO SYSTEME INTERNATIONAL Save
Contextual Info: Preliminary AS2520/21/20B/21B Telephone Speech Circuit with Loudhearing and Handsfree Austria Mikro Systeme International AG General Description Key Features □ Line/speech circuit, loudhearing, handsfree and dc/dc converter on one 28 pin CMOS chip □ Operating range from 13 to 100 mA down to 5

Contextual Info: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT

AP601

Abstract: AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114 C3034 VCC880 1-64DPCH
Contextual Info: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT

AP601

Abstract: AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114
Contextual Info: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT

Contextual Info: HMC816LP4E v00.1108 Amplifiers - low Noise - smT 7 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Applications Features The HmC816lp4e is ideal for: low Noise figure: 0.5 dB • Cellular/3G and lTe/wimAX/4G High Gain: 22 dB • BTs & infrastructure

marking c7 sot-89

Contextual Info: EC1089 The Communications Edge TM InGaP HBT Gain Block Product Information Product Features Functional Diagram Product Description GND • • • • • • 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Available in SOT-89 and

HMC452ST89E

Abstract: Rogers 4350 datasheet HMC452ST89 h452
Contextual Info: HMC452ST89 / 452ST89E v01.0205 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Designer’s Kit Available Typical Applications Features The HMC452ST89 / HMC452ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm

Rogers 4350 datasheet

Abstract: HMC452ST89 HMC452ST89E h452
Contextual Info: HMC452ST89 / 452ST89E v01.0205 AMPLIFIERS - SMT 8 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC452ST89 / HMC452ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm • GSM, GPRS & EDGE

Contextual Info: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT

Contextual Info: EC1089 The Communications Edge TM InGaP HBT Gain Block Product Information Product Features Functional Diagram Product Description GND • • • • • • 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Available in SOT-89 and

KMPSa92

Abstract: antilarsen volume potentiometer 1k ohm handsfree chip CIRCUITS OF TRANSISTOR BC 547 telephone speech circuit sidetone cancellation m4 atx Handsfree full duplex differential amplifier 2n5551
Contextual Info: Preliminary AS2520/21/20B/21B Telephone Speech Circuit with Loudhearing and Handsfree Austria Mikro Systeme International AG General Description Key Features ❑ Line/speech circuit, loudhearing, handsfree and dc/dc converter on one 28 pin CMOS chip ❑ Operating range from 13 to 100 mA down to 5