Untitled
Abstract: No abstract text available
Text: Multiple Range, 16-/12-Bit, Bipolar/Unipolar, Voltage Output DACs AD5761/AD5721 Data Sheet FEATURES GENERAL DESCRIPTION 8 software-programmable output ranges: 0 V to 5 V, 0 V to 10 V, 0 V to 16 V, 0 V to 20 V, ±3 V, ±5 V, ±10 V, −2.5 V to +7.5 V; 5% overrange
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16-/12-Bit,
AD5761/AD5721
16-bit
16-/12-bit
16-lead
TSSOP40Â
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Untitled
Abstract: No abstract text available
Text: Actuator Terminal Blocks for M agnetic Valves, Servom otors etc. 0.08 - 2 .5 m m 400 V /6 kV/3, 20 A O 250 V /4 kV/3, 20 A O AWG 28 - 12 300 V, 15 A W 300 V, 15 A a Terminal block width 5 mm / 0.197 in O 0.08 - 2 .5 m m 2 AWG 28 - 12 125 V /5 A © 250 V; 6.3 A TO
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Untitled
Abstract: No abstract text available
Text: SEMIKRON INC 3bE D • Ûl3bb71 QDG2S11 3 M S E K G SEMIKRON Absolute Maximum Ratings Symbol Vos V dgr Id I dm V gs Pd T|,Tstg Visol humidity climate Values Units 500 500 9 36 ±20 125 - 5 5 . . . + 150 2 500 Class F 5 5 /1 5 0 /5 6 V V A A V W °C V 9 36
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l3bb71
QDG2S11
13bb71
613bb71
QDQ2S14
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VM775
Abstract: vtc vm VTC, VM VM VTC 24-lead
Text: V M 7 7 5 0 /V M 7 7 5 0 F 2, 4, 6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER WITH MULTIPLE SERVO WRITE CAPABILITY 950801 PRELIMINARY FEA TU R ES CON NECTION DIAGRAMS High Performance - Read Gain = 300 V/V Typical - Input Noise = 0.49nV/VHz Typical
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49nV/VHz
540nH,
VM775
vtc vm
VTC, VM
VM VTC 24-lead
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SKM254F
Abstract: skm 254 f
Text: s e M IK R O n Absolute Maximum Ratings Symbol Values Units 500 500 35 140 V V + 20 400 - 5 5 . . .+150 2 500 Class F 5 5 /1 5 0 /5 6 V W Conditions ' V ds V dgr Id Idm V gs Pd Tj, Tstg Visol AC, 1 min, 2 0 0 iA humidity climate D IN 40 040 DIN IEC 6 8 T .1
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IXGH40N30
Abstract: high current igbt
Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 V CES ^C25 V CE sat trfl >c — 300 60 2.4 75 V A V ns G (if »E Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C v* CGR T, = 2 5 ° C to 1 5 0 "C; R V GES Maximum Ratings 300 V 300 V Continuous i2 0 V V GEM Transient
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IXGH40N30BD1
O-247
IXGH40N30
high current igbt
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Untitled
Abstract: No abstract text available
Text: SIE » a i 3 bb?l □□□3 bGt. a?b « S E K G • se MIKRD n SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Values Units 1000 1000 28 110 ±20 700 - 5 5 . . .+ 150 2 500 Class F 5 5 /1 5 0 /5 6 V V
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13bb71
T-39-15
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' Values Units 50 V 50 V V ds V dgr Res = 2 0 kQ Tease = 5 5 °C 200 A I dm 600 A V gs ±20 V Id Pd Tj, Tstg Visol A C , 1 min humidity climate D IN 4 0 0 4 0 400 W - 5 5 . . .+ 1 5 0 °C V 2 500 SEMITRANS M
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fll3bb71
B5-33
M204A
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SKM284F
Abstract: SKM284 SKM 284 f
Text: s e m ik r o n Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd humidity climate 800 800 20 80 ±20 400 - 5 5 . . .+150 2 500 Class F 5 5 /1 5 0 /5 6 V V C onditions ’ R gs = 20 ki2 Tj, Tstg Visol Values Units AC, 1 min, 200 nA DIN 40 040 DIN IEC 68 T.1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI INTELLIGENT POWER MODULES PM200CSA060 FLAT-BASE TYPE INSULATED PACKAGE 1. V upc 2. UFo 3. Up 4. V upi 5. V vpc 6. VFo 7. V p 8. V v pi 9. V wpc 11. W p 12. V wpi 13. V nc 14. V ni 1 5 .NC 16. U N 17. V N 18. W n 19.FO 10. WFo Description: U -Z > 5
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PM200CSA060
20kHz.
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Untitled
Abstract: No abstract text available
Text: A N A LO G D E V IC E S High Precision Voltage Reference AD588* FEATURES Low Drift - 1.5ppm/°C Low Initial Error - Im V Pin-Programmable Output + 10V, + 5 V , ± 5 V Tracking, - 5 V , - 1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense
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AD588*
AD588
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES High Precision Voltage Reference AD588* FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Programmable Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense
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MIL-STD-883
AD588
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transistor 8331
Abstract: AD583BD AD588BD AD588TQ rtd with wheatstone bridge K4515 AD588 AD588AQ AD588JQ AD588SE
Text: ANALOG ► DEVICES High Precision Voltage Reference FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Program m able Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense
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MIL-STD-883
AD588
transistor 8331
AD583BD
AD588BD
AD588TQ
rtd with wheatstone bridge
K4515
AD588AQ
AD588JQ
AD588SE
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Untitled
Abstract: No abstract text available
Text: V T C INC b4E D V T C In c. Value the Customer ’ =1368^2^ 0 0 0 3 ^ 2 5 TOfl VM7114 2 OR 4-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY TWO/THREE TERMINAL & SERVO PREAMPLIFIERS FEATURES • High Performance - Read Gain = 200 V / V _
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VM7114
100mV,
10MHz
10OmV,
10MHz
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Untitled
Abstract: No abstract text available
Text: BIXYS Ultra-Low VCE m1| IGBT IXGH 31N60 IXGT 31N60 600 V 60 A 1.7 V CES C25 V CE(sat Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T J, = 2 5 ° C to 15 0 °C; RrF = 1 Mi2 Cat 600 V V GES Continuous
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31N60
31N60
O-268
O-247
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SKM151F
Abstract: skm 151 mosfet
Text: s e MIKRO n 500 V SEMITRANS M Power MOSFET Modules SKM 151 F 500 V • Discontinued 1998 56 224 A A Absolute Maximum Ratings Symbol Conditions V ds V dgr Res Values ' = 2 0 ki2 Id Id m V gs Pd Tj, Tstg Visol humidity climate Units ±20 V 700 W 5 5 . . .+ 1 5 0
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B5-22
SKM151F
skm 151 mosfet
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Untitled
Abstract: No abstract text available
Text: nixY S HiPerFAST IGBT with Diode IXGH39N60BD1 V CES ^C25 V CE sat tn Symbol Test Conditions V CHS T j = 2 5 ° C to 1 5 0 c C 600 V V C GR T , = 25° C to 150° C; RGF = 1 M il 600 V V GES Continuous 120 V Transient +J30 V <c2S T c = 2 5 °C 76 A C90
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IXGH39N60BD1
O-247
125CC,
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q5t3
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 ’ CES ^C25 v CE sat tfi Symbol Test Conditions V CES T j = 2 5 ; C to 1 5 0 C 600 V VCGR T,J = 25° C to 150° C; FLC = 1 Mi2 Gt 600 V V GES Continuous ±20 V VGEM Transient +30 V ^C2S 'c90 Maximum Ratings T c = 2 5 °C
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32N60AU1
O-247
one100C
q5t3
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6008B
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 24N60AU1 Symbol Test Conditions Maximum Ratings V C ES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T,J = 25° C to 150° C; RCat„ = 1 MQ 600 V V t ges Continuous +20 V V GEM Transient t30 V ^C 25 Tc -2 5 C 48 A ^C90 T c = 9 0 3C
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24N60AU1
6008B
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Untitled
Abstract: No abstract text available
Text: Öl3bb71 DDG3ti32 Tbfl « S E K G S1E » - SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol Conditions V ds V dgr R g s = 20 k£i 1000 1000 18 72 ±20 400 - 5 5 . . + 1 5 0 2 500 Class F 55/150/56 V V A A V W °C V 18 72 A A ' Id Idm V gs Pd
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l3bb71
DDG3ti32
ai3bb71
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50N6
Abstract: 50N60A IXGH50N60A
Text: o ix y s HiPerFAST IGBT IXGH 50N60A VCES IC25 V— tfi Surface Mountable = 600 V = 75 A = 2.7 V = 275 ns ÔE Maximum Ratings Symbol Test Conditions V CEs T j = 2 5 °C to 1 5 0 °C 600 V Vce„ T ,J = 2 5 ° C to 15 0 °C; R jfc „ = 1 MQ 600 V v GES Continuous
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50N60A
O-247
50N60A
50N60AU1
50N6
IXGH50N60A
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50L2
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE FK16KM-5 OUTLINE DRAWING • V d s s .2 5 0 V • rDS ON (MAX) .0.31 Q
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FK16KM-5
150ns
O-220FN
50L2
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c2555
Abstract: IC IGBT 25N120 25N120
Text: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C
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25N120
25N120A
25N120A
c2555
IC IGBT 25N120
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Untitled
Abstract: No abstract text available
Text: s e MIKRON 500 V SEMITRANS M Power MOSFET Modules SKM 151 F 500 V • Discontinued 1998 56 A A Absolute Maximum Ratings Symbol Conditions Values V ds V dgr R q s = 2 0 ki2 Id Units I DM 224 V gs ±20 V Pd Tj, Tstg 700 W Visol humidity climate 5 5 . . .+ 1 5 0
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613bb71
0QDbD74
B5-21
00Gb075
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