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    5 LEAD DD PAK Search Results

    5 LEAD DD PAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    5 LEAD DD PAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT1965

    Abstract: ic regulator
    Text: DEMO C IR C U IT 1 1 7 2 A Q U IC K S TAR T GLT1965 U IDE L T 1 9 6 5 EDD 1 .1 A L o w Dro p o u t R e g u la to r DESCRIPTION Demonstration circuit 1172A is a low dropout linear regulator featuring LT 1965, w hich comes in 5-lead TO -220, 5-lead DD-PAK as w ell as the thermally enhanced 8-lead M SO P and 8-lead 3mmX3mm DFN


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    PDF LT1965 DC1172A LT1965 ic regulator

    5-Lead Plastic DD Pak ltc Q

    Abstract: 5 lead plastic dd pak 5 lead dd pak Reference LTC DWG
    Text: Q Package 5-Lead Plastic DD Pak Reference LTC DWG # 05-08-1461 Rev E .256 (6.502) .060 (1.524) TYP .060 (1.524) .390 – .415 (9.906 – 10.541) .165 – .180 (4.191 – 4.572) .045 – .055 (1.143 – 1.397) 15° TYP .060 (1.524) .183 (4.648) +.008 .004 –.004


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    Abstract: No abstract text available
    Text: APT47N60BC3 G APT47N60SC3(G) 600V 47A 0.070 TO Super Junction MOSFET -24 7 D 3 PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package.


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    PDF APT47N60BC3 APT47N60SC3 O-247

    infineon cool MOSFET dynamic characteristic test

    Abstract: No abstract text available
    Text: 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOL MOS B TO Po we r Se miconduc tors -24 7 D 3 PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg


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    PDF APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* O-247 infineon cool MOSFET dynamic characteristic test

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    Abstract: No abstract text available
    Text: STB30NE06L N - CHANNEL 60V - 0.35H - 30A - D^PAK _STripFET POWER MOSFET PRELIMINARY DATA TYPE STB30N E06L V dss R dS oii Id 60 V < 0.05 Q. 30 A . • TYPICAL R D S (on) = 0.035 100% AVALANCHE TESTED . LOW GATE CHARGE 100 °C . APPLICATION ORIENTED


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    PDF STB30NE06L STB30N O-263 P011P6/E

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    Abstract: No abstract text available
    Text: IRFR/U014A A d van ced Power MOSFET FEATURES B V DSS - 60 V Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance 00 ho ♦ 0 .1 4 0 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 60V


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    PDF IRFR/U014A

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    Abstract: No abstract text available
    Text: IRFR/U214A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V


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    PDF IRFR/U214A

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    Abstract: No abstract text available
    Text: IRFW/IZ14A A d van ced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology 0.1 4Q ♦ Rugged Gate Oxide Technology ^D S o n - ♦ Lower Input Capacitance In = 1 0 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature


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    PDF IRFW/IZ14A

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    Abstract: No abstract text available
    Text: IRFR014 A d van ced Power MOSFET FEATURES B V DSS - 60 V Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance 00 ho ♦ 0 .1 4 0 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 60V


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    PDF IRFR014

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    Abstract: No abstract text available
    Text: IRFR214 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V


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    PDF IRFR214

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    Abstract: No abstract text available
    Text: IRFW/IZ24A A d van ced Power MOSFET FEATURES B V DSS = 60 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q , 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature


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    PDF IRFW/IZ24A

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    Abstract: No abstract text available
    Text: STB5NB80 N - CHANNEL 800V - 1 ,8H - 5A - D^PAK PowerMESH MOSFET TYPE S TB5N B80 • . . . . . V d ss R d S o ii Id 800 V < 2.2 Q. 5 A TYPICAL RDS(on) = 1 -8 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


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    PDF STB5NB80 O-263

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    Abstract: No abstract text available
    Text: IRFWZ14 A d van ced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology 0.1 4Q ♦ Rugged Gate Oxide Technology ^D S o n - ♦ Lower Input Capacitance In = 1 0 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature


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    PDF IRFWZ14

    Untitled

    Abstract: No abstract text available
    Text: STB60NE03L-12 N - CHANNEL 30V - 0.009 i ì - 60A - D^PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S TB60N E03L-1 2 30 V < 0.012 a 60 A • . . . . . . . TYPICAL RDS(on) = 0.009 AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STB60NE03L-12 TB60N E03L-1 STB60NE3L1-16 O-263

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    Abstract: No abstract text available
    Text: IRLR/U210A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V


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    PDF IRLR/U210A

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    Abstract: No abstract text available
    Text: IRLR210 A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V


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    PDF IRLR210

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    Abstract: No abstract text available
    Text: IRFR/U024A A d van ced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 0 .0 7 Q , In = 1 5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 60V


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    PDF IRFR/U024A

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    Abstract: No abstract text available
    Text: IRFR224 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance CO bo ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


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    PDF IRFR224

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    Abstract: No abstract text available
    Text: IRFR/U224A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 o II ♦ Lower Input Capacitance bo ♦ Rugged Gate Oxide Technology CO ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


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    PDF IRFR/U224A

    TRANSISTOR mosfet k2

    Abstract: No abstract text available
    Text: STB60NE06L-16 N - CHANNEL 60V - 0.014 Ü - 60A - D^PAK ’’SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA . . . . . . . . TYPE V dss R dS oii Id STB60NE06L-1 6 60 V <0.016 Q. 60 A TYPICAL Ros(on) =0.014 C2 A VALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STB60NE06L-16 STB60NE06L-1 AT100 O-263 TRANSISTOR mosfet k2

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    Abstract: No abstract text available
    Text: STP60NE06L-16 N - CHANNEL 60V - 0.014 £2 - 60A - D^PAK "SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S T P 60N E 06L-1 6 60 V < 0 . 0 1 6 Q. 60 A . . TYPICAL Ros(on) =0.014 £2 AVALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


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    PDF STP60NE06L-16 06L-1 AT100Â O-263

    IRLR230

    Abstract: IRf 48 MOSFET LS40V
    Text: IRLR230 A dvanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 7 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 0 .4 Î2 D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 200V


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    PDF IRLR230 IRLR230 IRf 48 MOSFET LS40V

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    Abstract: No abstract text available
    Text: IRFR/U 234A A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Rugged Gate Oxide Technology ^DS on = 0 -4 5 ÌÌ ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology 6.6 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


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    PDF IRFR/U234A

    Untitled

    Abstract: No abstract text available
    Text: STB3015L STP3015L N - CHANNEL 30V - 0.013 i i - 40A - D^PAK/TO-220 _STripFET POWER MOSFET PRELIM IN ARY DATA TYPE V dss RDS on Id STB 3015L 30 V < 0.0155 a 40 A . TYPICAL RDS(on) = 0.013 . EXCEPTIONAL dv/dt CAPABILITY . LOW GATE CHARGE A 100°C


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    PDF STB3015L STP3015L PAK/TO-220 3015L