5 GHZ TRANSISTOR 1W Search Results

RCA-41024

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
Contextual Info: File No. 658 RF Power Transistors Solid State Division 4 1024 1-W, 1-GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Co­ operation in U H F Circuits Features: • 1-watt output min. at 1 GHz 5 dB gain ■ For sonde applications 0.3-w att ou tput ty p . at 1.68 GHz (V q q = 20 V )

smd transistor marking z3

Abstract: smd transistor marking j8 MOSFET marking Z4 transistor 6 pin SMD Z2 smd transistor marking z8 freescale semiconductor body marking smd transistor marking j6 Z9 TRANSISTOR SMD 465B MRF18090A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

transistor c s z 44 v

Contextual Info: 4JÄ C O M w an A M P com pany CW Power Transistor, 1W 2.3 GHz PH2323-1 V2.00 Features • • • • • • • NPN S ilicon M icrow ave P o w er Transistor C o m m o n Base C on figuration C lass C O p eratio n Interdigitated G eo m etry D iffused Em itter B allasting Resistors

transistor c128

Abstract: 55FT
Contextual Info: C1-28/C1-28Z _ 1Watts "28 Volts’ Class C GHz TECHNOLOGY DsfCO Ill 400 IV lH Z »f-M IC »O W A V e SILICO N >OWE> « A H S IS T O H Î GENERAL DESCRIPTION CASE OUTLINE The Cl-28 / Z is a COMMON EMITTER transistor capable of providingl Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This

LP1500

Abstract: MIL-HDBK-263 Filtronic LP1500P100 pHEMT transistor
Contextual Info: LP1500P100 PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

rf transistor 6ghz 1w

Abstract: TC2571 TC1501
Contextual Info: TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation

FPD3000P100

Abstract: phemt FPD1500P100
Contextual Info: FPD1500P100 1W PACKAGED POWER PHEMT • FEATURES ♦ 29.5 dBm Linear Output Power ♦ 18 dB Power Gain at 2 GHz ♦ 10.5 dB Maximum Stable Gain at 10 GHz ♦ 39 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility

filtronic Solid State

Abstract: LP1500 LP1500P100 LP1500-P100-1 LP1500-P100-2 LP1500-P100-3
Contextual Info: Filtronic LP1500P100 PACKAGED 1W POWER PHEMT Solid State FEATURES • +31 dBm Typical Power at 15 GHz • 12.5 dB Typical Power Gain at 15 GHz • Low Intermodulation Distortion • 50% Power-Added-Efficiency • Color-coded by IDSS range GATE SOURCE DRAIN

BF547A

Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS

FPD1500

Abstract: MIL-HDBK-263 P100
Contextual Info: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND

FPD1500

Abstract: stepper FPD1500 SOT89 MIL-HDBK-263 P100
Contextual Info: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND

FPD1500

Abstract: MIL-HDBK-263 PAD130
Contextual Info: FPD1500 1W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an

FPD1500

Abstract: transistor A114 FPD1500 SOT89
Contextual Info: FPD1500 Datasheet v3.0 1W POWER PHEMT LAYOUT: FEATURES: • • • • • 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an

transistor rf type M 2530

Abstract: signal path designer INA02170
Contextual Info: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.

Contextual Info: FPD1500 Datasheet v2.2 1W POWER PHEMT FEATURES: • • • • • LAYOUT: 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an AlGaAs/InGaAs

MAGX-000035-030000

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw transistor 15 GHz MAGX-000035-SB1PPR Gan on silicon transistor GP18-20 5 GHZ TRANSISTOR 1W MAGX-000035
Contextual Info: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

Motorola transistor smd marking codes

Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Contextual Info: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

double TRANSISTOR SMD MARKING CODE mc

Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

Contextual Info: MPS-173011-85/86 jVtWJ 1 IÜ I« 1701i l l llatai ttnplilii www.mwtinc.com Email: info@mwtinc.com KttntnniPAfi • +45 dBm Typical IP3 Single Positive Bias • 1W Typical Output Power Surface Mount Packs Half Flange Package • 14 dB Typical Gain The MPS173011 is a modular amplifier designed to meet the uitralinear transm itter

transistor mps 13

Abstract: SOLAR TRANSISTOR
Contextual Info: MPS-173011-85/86 1400 to 1700 MHz Linear Amplifier www.mwtinc.com Email: info@mwtinc.com Features +45 dBm Typical IP3 Single Positive Bias 1W Typical Output Power Surface Mount Package or Half Flange Package 14 dB Typical Gain The MPS173011 is a modular amplifier designed to meet the ultralinear transmitter

MPS-173011-85

Contextual Info: MPS-173011-85/86 1400 to 1700 MHz Linear Amplifier www.mwtinc.com Email: info@mwtinc.com Features +45 dBm Typical IP3 Single Positive Bias 1W Typical Output Power Surface Mount Package or Half Flange Package 14 dB Typical Gain The MPS173011 is a modular amplifier designed to meet the ultralinear transmitter