Hitachi DSA002715
Abstract: No abstract text available
Text: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2
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HA1127,
HA1127P,
HA1127FP
HA1127
HA1127P
HA1127FP
DP-14
FP-14DA
Hitachi DSA002715
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HA1127
Abstract: Hitachi DSA0076 HA1127P DP-14 FP-14DA HA1127FP
Text: HA1127/P/FP 5 Transistor Arrays ADE-204-062 Z Rev. 0 Dec. 2000 Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 (substrate) E1 3 12 B5 B2 4 11
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HA1127/P/FP
ADE-204-062
HA1127
DP-14
HA1127P
HA1127FP
FP-14DA
HA1127
Hitachi DSA0076
HA1127P
DP-14
FP-14DA
HA1127FP
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hitachi mosfet power amplifier audio application
Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
Text: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners
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AmVC132
HVC133
HVC134
HVM131S
HVM131SR
HVM132
HVM132WK
hitachi mosfet power amplifier audio application
transistor 2sk
MESFET Application
N Channel Dual Gate MOS FET UHF/VHF TV Tuner
hitachi mosfet audio application note
uhf tv booster circuit diagram
hvm15 varicap
UHF/VHF booster circuit diagram
booster gsm antenna
UHF/VHF TV Tuner HITACHI
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HP85671A
Abstract: Hitachi DSAUTAZ006 A2539 ENFV Q1/JR 3610 214 A/Detector/"Detector IC"/"CD"/JR 3610 214 50708
Text: APPLICATION NOTE Dual PLL Frequency Synthesizer System Board for Mobile Communications PLL-SB6 1st. Edition ADE-507-082 Z Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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ADE-507-082
HP85671A
Hitachi DSAUTAZ006
A2539
ENFV
Q1/JR 3610 214
A/Detector/"Detector IC"/"CD"/JR 3610 214
50708
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Hitachi DSAUTAZ006
Abstract: 2360 making Hitachi transistors
Text: APPLICATION NOTE Dual PLL Frequency Synthesizer System Board for Mobile Communications PLL-SB7 1st. Edition ADE-507-083 Z Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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ADE-507-083
Hitachi DSAUTAZ006
2360 making
Hitachi transistors
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hvm15 varicap
Abstract: hvc321b varicap diode tv tuner LT 5246 HUV131 diode lt 316 varicap diode HITACHI tuner C25 diode CVR 275 20
Text: Tune your Circuits Tuner Applications Varicap Diode Samples in this Kit: • • • • • • HVU 202B HVC 202B HVU 300B HVC 300B HVU 306B HVC 306B • • • • • • HVU 363B HVC 363B HVU 12 HVC 316 HNC 317B HVM 15 Hitachi’s range of Varicap and PIN Diodes
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diode 368b
Abstract: HUV131 HUV132 HVC376B 358B diode varicap 5.8 Ghz hvc365 cross HVC 3-12 varicap diode c05 10 48 diode
Text: Tune your Circuits Mobile Phone Applications Hitachi’s range of Varicap and PIN diodes addresses the needs of todays mobile phone development engineers. A small package, wide tuning range, low operating voltage and low noise have made these diodes one of
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200MHz
99/4Q)
HSC88
00/2Q)
HSU227
HS9588
HSC226
diode 368b
HUV131
HUV132
HVC376B
358B
diode varicap 5.8 Ghz
hvc365 cross
HVC 3-12
varicap diode
c05 10 48 diode
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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MESFET Application
Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A
Text: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:
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49E-13
00E-01
00E-06
44E-13
HVC133
30E-12
27E-15
HVM132WK
MESFET Application
hitachi mosfet power amplifier audio application
2sk2685 spice
00E-12
hitachi mosfet audio application note
Hitachi audio mosfet application
booster gsm antenna
hitachi discrete
circuit diagram wireless video transmitter and re
2SK239A
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MQE541-1178
Abstract: mqe541 K2886 TSM-LR-PC Hitachi DSAUTAZ006 Nippon capacitors
Text: APPLICATION NOTE Dual PLL Frequency Synthesizer System Board for Mobile Communications PLL-SB5 1st. Edition ADE-507-070 Z Preface Hitachi has developed the ICs listed below as dual PLL frequency synthesizers for mobile communications systems. This application note describes the PLL-SB5 evaluation board, which
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HD155021T
I-00137
E-28036
S-164
F-78148
MQE541-1178
mqe541
K2886
TSM-LR-PC
Hitachi DSAUTAZ006
Nippon capacitors
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HZ11
Abstract: HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ27
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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zener diode B3 39
Abstract: HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ27
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / L O G I C / A R R A V S / M E M T5 DËJ 4 ^ 2 0 3 □ 0 1 0 3 2 c1 4 | d T-'ŸS'JZ/ 92D 10329 H D74H C10 # Triple 3-input NAND Gates I PIN ARRANGEMENT • FEATURES • High Speed Operation: tp i=10.5ns typ. (Q _ = 5 0 p F • High Output Current: Fanout of 10 L S T T L Loads
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01032c
0D1D315
T-90-20
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diode Lz 99
Abstract: HITACHI HZS
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-120A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.
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ADE-208-120A
Storag25
HZS36-3.
diode Lz 99
HITACHI HZS
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zener 5.1 B2
Abstract: 4.7 B2 zener hitachi Zener Diode marking code zener diode 2.7 b2 15012HSABBN5A c2 zener
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-120A Z Rev 1 December 1996 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc.
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ADE-208-120A
HZS36-3.
DO-34
zener 5.1 B2
4.7 B2 zener
hitachi Zener Diode marking code
zener diode 2.7 b2
15012HSABBN5A
c2 zener
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Untitled
Abstract: No abstract text available
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI A D E -2 0 8 - 1 20A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.
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HZS16
HZS18
HZS20
HZS22
HZS24
HZS27
HZS30
HZS33
HZS36
HZS36-3.
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Untitled
Abstract: No abstract text available
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-117A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.
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ADE-208-117A
DO-35
HZ36-3.
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zener 5.1 B2
Abstract: zener 3.3 b2 HZ24-1 30 B2 zener Zener Diode C3 5 zener diode 2.7 b2 22 B2 zener c2 zener zener series hz
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-117A Z Rev 1 November 1996 Features • Low leakage, low zener impedance and maximum power dissipation o f 500 mW are ideally suited for stabilized power supply, etc.
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ADE-208-117A
DO-35
DO-35
SC-48
zener 5.1 B2
zener 3.3 b2
HZ24-1
30 B2 zener
Zener Diode C3 5
zener diode 2.7 b2
22 B2 zener
c2 zener
zener series hz
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zener series hzs
Abstract: No abstract text available
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-120A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.
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ADE-208-120A
HZS20
HZS22
HZS24
HZS27
HZS30
HZS33
HZS36
HZS36-3.
zener series hzs
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Untitled
Abstract: No abstract text available
Text: NEWS Updates on the world of Hitachi semiconductors Hitachi Introduces High-Performance Variable-Capacitance Diodes for Mobile Communications itach i h as d ev elo p ed highp erform an ce variable-capac itance d iod es to im prove th e p erform an ce o f m ob ile co m m u n i
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D-85622
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zener diode A3
Abstract: C2 3 zener diode HITACHI HZS-L rd 9.1 b2 HZS6L zener Diode B2 diode Lz 99
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-121A
-55Test
HZS36-3L
zener diode A3
C2 3 zener diode
HITACHI HZS-L
rd 9.1 b2
HZS6L
zener Diode B2
diode Lz 99
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diode 9.1 b3
Abstract: diode Lz 99 zener diode A3 hz6a-2l 5.6 B1 zener diode HZ6L A2 zener diode HITACHI HZ-L ADE-208-118A HZ7L
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
HZ36-3L
diode 9.1 b3
diode Lz 99
zener diode A3
hz6a-2l
5.6 B1 zener diode
HZ6L
A2 zener diode
HITACHI HZ-L
HZ7L
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diode HZ27L-3
Abstract: hz11l
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
HZ20L
HZ22L
HZ24L
HZ27L
HZ30L
HZ33L
HZ36L
HZ36-3L
diode HZ27L-3
hz11l
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A2 zener diode
Abstract: 5.6 B1 zener diode 9.1 b2 diode rd 9.1 b2 52Y Diode
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
HZ24L
HZ27L
HZ30L
HZ33L
HZ36L
HZ36-3L
A2 zener diode
5.6 B1 zener diode
9.1 b2 diode
rd 9.1 b2
52Y Diode
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