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Catalog Datasheet	MFG & Type	PDF	Document Tags
1N3086 Abstract: 4SS54S2 Text: INTERNATIONAL RECTIFIER 5bE D • 4SS54S2 □□10b7 a 4 international Iis r I Rectifier Rectifiers, Standard Recovery 100 TO 200 AMPS Part RRM FSM (1 50Hz 60Hz 'F(AV) number (V) 1N3288A 1N3289A 1N3290A 1N3291A 1N3292B 1N3293A 1N3294A 1N3295A 1N3296A 150K5A	OCR Scan	PDF	4SS54S2 1N3288A 1N3289A 1N3290A 1N3291A 1N3292B 1N3293A 1N3294A 1N3295A 1N3296A 1N3086
IGBT 500V 50A Abstract: mosfet 600V 50A diode C435 50a rectifier circuit mosfet 500V 50A Text: International S Rectifier Provisional Data Sheet PD-9.1151 IRGNIN050M06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT VŒ = 600V lc = 50A V ce ON < 2.0V .Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail“ losses .Short circuit rated	OCR Scan	PDF	IRGNIN050M06 C-436 4SS54S2 00SQ22b IGBT 500V 50A mosfet 600V 50A diode C435 50a rectifier circuit mosfet 500V 50A
Untitled Abstract: No abstract text available Text: PD-9.1068 In te rn atio n al Rectifier_ 1RF740LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Cos& Crss Extremely High Frequency Operation Repetitive Avalanche Rated	OCR Scan	PDF	1RF740LC D-6380 Q021S61
IRFI840GLC Abstract: No abstract text available Text: PD-9.1208 International i » r Rectifier IRFI840GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm	OCR Scan	PDF	IRFI840GLC D-6380 0021b77 IRFI840GLC
Untitled Abstract: No abstract text available Text: PD-9.928 International lili] Rectifier IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR Fast-Speed IGBT • • • • • • Hermetically sealed Isolated Latch-proof Simple gate drive High operating frequency Switching-loss rating includes all “tail” losses	OCR Scan	PDF	IRGVH50F IRGVH50FD IRGVH50FU O-258 55MS2
Untitled Abstract: No abstract text available Text: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET	OCR Scan	PDF	1393C IRHM7264SE 250Volt, 4SS54S2
Untitled Abstract: No abstract text available Text: International [îô^Rectifier HFA105NH60R H EXFRED " Ultrafast, Soft Recovery Diode PD-2.443 LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V V f = 1.5V i T i Qrr* = 1200nC	OCR Scan	PDF	HFA105NH60R 1200nC 40A/ps Liguria49
Untitled Abstract: No abstract text available Text: PD-9.1002 international io r Rectifier IRFI744G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V qss - 4 5 0 V ^DS on = 0.63£2	OCR Scan	PDF	IRFI744G O-220 D-8360