ABE 027
Abstract: ely transformers IRFM460 IRFM460D IRFM460U N431 BBV 32 transistors
Text: Data Sheet No. PD-9.727A INTERNATIONAL RECTIFIER IQ R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM46Q N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.
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IRFM460
IRFM460D
IRFM460U
O-254
MIL-S-19S00
SSM52
I-372
ABE 027
ely transformers
IRFM460
IRFM460U
N431
BBV 32 transistors
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GE DIODE
Abstract: C769
Text: International [ragRectifier PD-9.961 B IRGKI050U06 "C H O P P E R " IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch o3 •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGKI050U06
C-769
4AS5452
C-770
4S5S452
GE DIODE
C769
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Untitled
Abstract: No abstract text available
Text: MASSES 001 4552 International E?R Rectifier PD-9.568A IRC640 HEXFET Power MOSFET • • • • • • S3T • IN R INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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IRC640
4U55452
DD14SST
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CPY203E
Abstract: IRFC9130
Text: INTE RN ATI ON AL RECTIFIER SbE D 4055450 001G4b3 1 Data Sheet No. PD-5.014B International Rectifier T - & - S L 1 HEXFET Power Module CPY200 Series Power H Bridges Product Summary Description/Features The CPY200 series of H EXFET power modules along with the IRFT003 are intended for use in driving subfractional horsepower DC motors and stepper motors,
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001G4b3
CPY200
IRFT003
4S5S452
DP104ha
CPY200
AN-959
AN-961
IRFT003
CPY203E
IRFC9130
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Untitled
Abstract: No abstract text available
Text: PD - 9.1325A International l R Rectifier IRL2505 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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IRL2505
4A5S452
GG247bd
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Untitled
Abstract: No abstract text available
Text: » * i International Rectifier P D -9.1231 IRFP450LC H E X FE T Pow er M O S F E T • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, CoSS, C^ss Isolated Central Mounting Hole Dynamic dv/dt Rated
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IRFP450LC
4A5S452
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Untitled
Abstract: No abstract text available
Text: PD-9.1002 international io r Rectifier IRFI744G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V qss - 4 5 0 V ^DS on = 0.63£2
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IRFI744G
O-220
D-8360
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