4N03L09
Abstract: IPD30N03S4L-09 4n03L 4n03 PG-TO252-3-11 C2565 DIODE smd marking 52A
Text: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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PDF
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IPD30N03S4L-09
PG-TO252-3-11
4N03L09
4N03L09
IPD30N03S4L-09
4n03L
4n03
PG-TO252-3-11
C2565
DIODE smd marking 52A
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4N03L09
Abstract: No abstract text available
Text: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mW ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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PDF
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IPD30N03S4L-09
PG-TO252-3-11
PG-TO252-3-11
4N03L09
4N03L09
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iec 320 C-15 pinout
Abstract: IPD30N03S4L-09 PG-TO252-3-11
Text: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mW ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
PDF
|
IPD30N03S4L-09
PG-TO252-3-11
4N03L09
iec 320 C-15 pinout
IPD30N03S4L-09
PG-TO252-3-11
|