4MX32 Search Results

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

Contextual Info: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

Contextual Info: FMD4A32LCx–30Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft

IS42VM81600E

Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

NT5DS4M32EF-25

Abstract: NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4
Contextual Info: NT5DS4M32EF 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.

K4S283234F-M

Contextual Info: K4S283234F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA VDD 2.5V, VDDQ 2.5V Revision 0.1 November 2001 Rev. 0.1 Jan. 2002 K4S283234F-M CMOS SDRAM Revision History Revision 0.0 (Nov. 16. 2001, Final) • Final generation for 4Mx32 2.5V SDRAM FBGA. Revision 0.1 (Jan. 14. 2002, Final)

HY6V22F-33

Contextual Info: HY6V22F 128M 4Mx32 DDR SDRAM HY6V22F Revision 0.5 June 2001 Rev. 0.5 / June. 01 This document is a general product description and is subject to change without notice. 128Mb (4Mx32) Double Data Rate SDRAM HY6V22F Revision History 1. Rev 0.4 ( May.01) - Part Number changed from HY5DV283222F to HY6V22F

Contextual Info: a WPS4M 32-35MSC M/HITE /MICROELECTRONICS 4Mx32SRAM MODULE ADVANCED* FEATURES • ■ A ccess Tim e of 35ns ■ Packaging ■ B yte C ontrol Chip S elects Fully S ta tic O peration • No C lock or Refresh required • M o d u le is m a nufa cture d w ith eig h t 512Kx32 SRAM

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with

Contextual Info: WHITE /MICROELECTRONICS V Z Ä WPF29161-120X7X1 16MBYTE 4Mx32 FLASH (5VSupply; 5V or 12V Program) SIM M MODULE P R E L IM IN A R Y * FEATURES GENERAL DESCRIPTION • A cce s s T im e of 120ns The W h i t e M ic r o e le c tro n ic s W P F 2 9 1 61-120X7X1 is a 4 M x 32 bits

4Mx32 dram simm

Abstract: HMD4M32M2VE
Contextual Info: HANBit HMD4M32M2VE 16Mbyte 4Mx32 DRAM SIMM EDO MODE, 4K Refresh, 3.3V Part No. HMD4M32M2VE, HMD4M32M2VEG GENERAL DESCRIPTION The HMD4M32M2VE is a 4M x 32 bit dynamic RAM high-density memory module. The module consists of two CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin. A 0.1 or 0.22uF decoupling capacitor is mounted on

HY5DS283222BF

Abstract: HY5DS283222BFP-33
Contextual Info: HY5DS283222BF P 128M(4Mx32) GDDR SDRAM HY5DS283222BF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

WF4M32-XXX5

Contextual Info: White Electronic Designs WF4M32-XXX5 PRELIMINARY* 4Mx32 5V FLASH MODULE FEATURES Access Times of 100, 120, 150ns Packaging: • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 . • 68 lead, 40mm Low Profile CQFP (Package 502), 3.5mm (0.140") height.

Contextual Info: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification

HMD4M32M8EG

Contextual Info: HANBit HMD4M32M8EG/8EAG 16Mbyte 4Mx32 72-pin EDO MODE, 2K/4K Ref. SIMM Design 5V Part No. HMD4M32M8EG, HMD4M32M8EAG GENERAL DESCRIPTION The HMD4M32M8E is a 4M x 32 bit dynamic RAM high-density memory module. The module consists of eight CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board.

IS42SM16800E-6BLI

Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM DECEMBER 2010 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

4mx32

Abstract: sdram 4 bank 4096 16 TSOP 66 Package DPSD4MX32RY5
Contextual Info: 4Mx32, 7.5 - 15ns, P12, M-Densus 30A225-02 A M-Densus 128 Megabit Synchronous DRAM 4MX32RY5 High Density Memory Device PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member

HY5DU283222Q

Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
Contextual Info: HY5DU283222Q 128M 4Mx32 GDDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02

IS42S16160B(D)-7TL

Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

Contextual Info: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.

Contextual Info: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA with Pb Free Nanya Technology Corp. NTC reserves the right to change products or specification without notice.

Contextual Info: WF4M32-XXX5 UVHITE /M IC R O E L E C T R O N IC S 4Mx325V FLASH MODULE ADVANCED* FEATURES • Access Tim es o f 1 0 0 ,1 2 0 ,150nS ■ Packaging: ■ User co n fig u ra b le as 8 M x1 6 or 16M x8 in HIP and G4T packages. ■ • 66-pin, PGA Type, 1.385 inch square, H erm etic C eram ic HIP

Contextual Info: ça WHITE /MICROELECTRONICS WF4M32-XXX5 4MX32 5V FLASH MODULE, SMD 5962-97531 pending PRELIMINARY* FEATURES • Access Times of 1 0 0 ,1 2 0 ,150ns ■ User configurable as 8Mx16 or 16Mx8 in HIP and G4T packages. ■ Packaging: • 66-pin, PGA Type, 1.385 inch square, Hermetic Ceramic

Contextual Info: NT5DS4M32EF 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.