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    4MX16 EDO Search Results

    4MX16 EDO Datasheets Context Search

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    4MX16

    Abstract: No abstract text available
    Text: 64MB 144 PIN SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS8MES64V6EZ Pin Identification Description The TS8MES64V6EZ is an 8M x 64-bit dynamic Symbol Function RAM high-density memory module. It consists of A0~A11 Address inputs 8pcs of 4Mx16 DRAMs assembled on the printed


    Original     		4Mx16 TS8MES64V6EZ TS8MES64V6EZ 64-bit TS8MES64V6EV PDF

    Untitled

    Abstract: No abstract text available
    Text: 32MB 144 PIN 60ns SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS4MES64V6EZ Pin Identification Description The TS4MES64V6EZ is a 4M x 64-bit dynamic Symbol Function RAM high-density memory module. It consists of A0~A11 Address inputs 4pcs of 4Mx16 DRAMs assembled on the printed


    Original     		4Mx16 TS4MES64V6EZ TS4MES64V6EZ 64-bit PDF

    capacitor taa

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404BT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.2 June 1998 DRAM MODULE M466F0404BT2-L M466F0404BT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404BT2-L is a 4Mx64bits Dynamic


    Original     		M466F0404BT2-L 4Mx64 4Mx16 M466F0404BT2-L 4Mx16, 4Mx64bits cycles/128ms, capacitor taa PDF

    TAA 141

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4BT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F040(8)4BT1-C M366F040(8)4BT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4BT1-C is a 4Mx64bits Dynamic


    Original     		M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits TAA 141 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F080 8 4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic


    Original     		M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits 4Mx16bits PDF

    Q-SERIES

    Abstract: No abstract text available
    Text: HYM5V64404A Q-Series SO DIMM 4Mx64 bit CMOS DRAM MODULE based on 4Mx16 DRAM, EDO, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V64404A Q-Series is a 4Mx64-bit EDO mode CMOS DRAM module consisting of four 4Mx16 TSOP and one 2048-bit EEPROM on a 144 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM5V64404A 4Mx64 4Mx16 4Mx64-bit 4Mx16 2048-bit HYM5V64404AQ cycle/64ms) Q-SERIES PDF

    KM416V4104BS

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F404BS KMM374F404BS EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F404BS is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F404BS


    Original     		KMM374F404BS KMM374F404BS 4Mx16 4Mx72bits 4Mx16bits 300mil 168-pin KM416V4104BS PDF

    KM416C4104AS

    Abstract: kmm5328004asw km416c4104a
    Text: Preliminary KMM5328004ASW/ASWG DRAM MODULE KMM5328004ASW/ASWG EDO Mode 8M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004A is a 8Mx32bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5328004A


    OCR Scan     		KMM5328004ASW/ASWG 4Mx16, KMM5328004A 8Mx32bits 4Mx16bits 72-pin KMM5328004ASW/ASWG KMM5328004ASW KM416C4104AS km416c4104a PDF

    KMM374F804BS

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    Original     		KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    OCR Scan     		KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.


    Original     		KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    KMM466F404CS2-L

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404CS2-L KMM466F404CS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404CS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		KMM466F404CS2-L KMM466F404CS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    M466F0804DT1-L

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0804DT1-L M466F0804DT1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0804DT1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		M466F0804DT1-L M466F0804DT1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    tsop 138

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0805DT1-C M374F0805DT1-C Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0805DT1-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung


    Original     		M374F0805DT1-C M374F0805DT1-C 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin tsop 138 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804CS1-L KMM466F804CS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804CS1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		KMM466F804CS1-L KMM466F804CS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404DT2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		M466F0404DT2-L M466F0404DT2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		KMM466F404BS2-L KMM466F404BS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    KMM5324004BSW

    Abstract: KMM5324004BSWG km416c4104bs
    Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages


    Original     		KMM5324004BSW/BSWG KMM5324004BSW/BSWG 4Mx16, KMM5324004B 4Mx32bits KMM5324004B 4Mx16bits 72-pin KMM5324004BSW KMM5324004BSWG km416c4104bs PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404CT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0(Jan. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0404CT2-L DRAM MODULE M466F0404CT2-L M466F0404CT2-L EDO Mode


    Original     		M466F0404CT2-L 4Mx64 4Mx16 M466F0404CT2-L 4Mx16, 4Mx64bits PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466F404AS-L DRAM MODULE KMM466F404AS-L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTIO N FEATURES The Samsung KMM466F404AS-L is a 4M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		KMM466F404AS-L KMM466F404AS-L 4Mx64 4Mx16, 466F404AS-L cycles/128ms, 1000mil) DDBE733 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F804AS/AZ-L KMM332F804AS/AZ-L EDO Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F804A


    OCR Scan     		KMM332F804AS/AZ-L KMM332F804AS/AZ-L 4MX16, KMM332F804A 8Mx32bits 4Mx16bits 72-pin PDF

    KMM5328004BSW

    Abstract: KMM5328004BSWG
    Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages


    Original     		KMM5328004BSW/BSWG KMM5328004BSW/BSWG 4Mx16, KMM5328004B 8Mx32bits KMM5328004B 4Mx16bits 72-pin KMM5328004BSW KMM5328004BSWG PDF

    KMM5324004BSW

    Abstract: KMM5324004BSWG
    Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages


    Original     		KMM5324004BSW/BSWG KMM5324004BSW/BSWG 4Mx16, KMM5324004B 4Mx32bits KMM5324004B 4Mx16bits 72-pin KMM5324004BSW KMM5324004BSWG PDF

    Untitled

    Abstract: No abstract text available
    Text: M372F0805DT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M components are applied to this module. M372F0805DT0-C M372F0805DT0-C DRAM MODULE M372F0805DT0-C EDO Mode


    Original     		M372F0805DT0-C 8Mx72 4Mx16 M372F0805DT0-C 8Mx72bits PDF