4L STUD Search Results

3733

Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090

power amplifier IC 4440

Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min

CB410

Abstract: stu 407 2804lSL CB-50 CB303 1090 TACAN CB-303 CB-408 SD1543-2
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications DME/IFF/TACAN puisées, classe C TYPE PAC K AG E CONFIG. Vcc V SD 1528 .280 4L STUD (A) SD 1528-1 .280 4LSL (A) SD 1528-8 .250 2LFL HERM SD 1530 .280 4L STUD (A) SD 1530-1 .280 4LSL (A)

2n6080

Abstract: SD 1062 transistor 2N3924 sd 3632
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V

6lfl

Abstract: sd 1144 2N6080 7-02N sd1410 2N5643
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V

M104

Abstract: M135 XO-72 SD1072
Contextual Info: SELECTION GUIDE TO 39 M l 34} 3jp ¥ 500 6LFL ( M iti 380 4LFL (M l 13* 381) 4L STUD (M135) m u TO 60 (M137J 380 NARROW 4L STUD (M104) .280 /1LSL (M123> st (M l 07) 130 . 230 MHz CLASS FOR FM MOBILE APPLICATIONS Type Config. VCC (V) .280 4LSL XO-72 SL

BFR38

Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022

HF8-28S

Abstract: ASI10736
Contextual Info: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B

transistor TPV375

Abstract: TPV375 TPV-375
Contextual Info: TPV375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV375 is a Common Emitter Device Designed for Class A Television Band III Applications. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 8A

SUTV040

Abstract: M122 SD4011
Contextual Info: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE POUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE

arco TRIMMER capacitor

Abstract: arco 404 arco TRIMMER capacitor 425 arco 403 CPM13B capacitor 100uF 63V 3 pins trimmer capacitor TRIMMER capacitor 0.5 pF to 80pf TRIMMER capacitor 3 pin TRIMMER capacitor
Contextual Info: SD1459 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . 170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS P OUT = 20 W MIN. WITH 7.5 dB GAIN .500 Dia .550 4L STUD M164

Contextual Info: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B

150WpEP

Abstract: THX15C
Contextual Info: THX15C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI THX15C is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS

SUTV040

Abstract: airtronic M122 SD4011
Contextual Info: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE P OUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE

MSC80185

Abstract: MSC80186 S027
Contextual Info: MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz P OUT = 30.0 dBm MIN. .230 4L STUD S027

SD1727

Contextual Info: SD1727 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1727 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS

THX15

Contextual Info: THX15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI THX15 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC

Contextual Info: rz T SCS-THOMSON SD1439 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS > 860 MHz > COMMON EMITTER . GOLD METALLIZATION . CLASS A LINEAR OPERATION . Pout = 0.5 W MIN. WITH 9.5 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE BRANDING SD1439 TCC596

TCC593

Abstract: M122 SD1437
Contextual Info: SD1437 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . 860 MHz COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 2 W MIN. WITH 8.5 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CO DE SD1437 BRANDING TCC593 PIN CONNECTION DESCRIPTION

VLB40-12S

Abstract: vhf fm amplifier ASI10735 TRansistor A 940
Contextual Info: VLB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB40-12S is a common Emitter transistor, designed for VHF FM amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD A .112x45° FEATURES:

SD1169

Contextual Info: SD1169 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1169 is a Common Emitter Device Designed for Class C Amplifier Applications in HF Land Mobile Radios. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Aluminum Metalization • Emitter Ballasting

TRW54601

Contextual Info: TRW54601 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. FEATURES: • Diffused Ballast Resistors • Omnigold Metalization System • Common Emitter

HF30-28S

Abstract: ASI10605 HF30-28F
Contextual Info: HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L STUD

ULBM5

Abstract: ASI10680
Contextual Info: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD