Untitled
Abstract: No abstract text available
Text: International ggg] Rectifier 4fl55452 0015blt 37b • INR HEXFET Power MOSFET INTERNATIO NAL • • • • • • PD-9.542B IRFPF50 r e c t if ie r Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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4fl55452
0015blt
IRFPF50
O-247
O-220
O-247
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PG44
Abstract: No abstract text available
Text: 73 INTERNATIONAL RECTIFIER IO R d T | 4fl55455 ODDbTMl O Data Sheet No. PD-3.142 in t e r n a t io n a l , r e c t i f i e r S23DF & S23DFH SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 8 fjs 270 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs
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4fl55455
S23DF
S23DFH
S23DF
S23DFH
TD-209AB
S23DGF4A0.
4fl554S2
PG44
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1N1183
Abstract: 1N1186RA 1N1184 1N1183A 1N1184A 1N2128A 1N3765 IN118 TQ140 INI183
Text: SS DE I 4fl55452 4855452 00Em40 T |~~ 5 5C INTER N A T I O N A L R E C T I F I E R D 04940 Data Sheet No. PD-2.087 r - t f / - IN TER N A TIO N A L R E C T IF IE R T 'I IÖR 1N1183, 1N3765, 1M11S3A, 1NS1S8A SERIES 35, 4 0 and 6 0 Amp Power Silicon Rectifier Diodes
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00Em40
11X11183,
1N3765,
1N11B3A,
1N2128A
in1183
1n3765
1n1183a
1N1183
1N1186RA
1N1184
1N1184A
IN118
TQ140
INI183
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DL 4770
Abstract: D0205AB International Rectifier SSC
Text: 4855452 INTERNATIONAL RECTIFIER IQ R "□s 02E 07900 D 7“ -¿>.3-«2/ Data Sheet NO. PU-2.104 in t e r n a t io n a l r e c t if ie r DE I 4fl5545E □□D7ÌG0 1 | R23DF AND R23DFR SERIES 2400-2200 VOLTS RANGE REVERSE RECOVERY TIME 2.75//S 135 AMP AVG STUD MOUNTED
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07C1G0
R23DF
R23DFR
75//s
R230FR
a400v>
RBXFR248.
D0-205AB
DL 4770
D0205AB
International Rectifier SSC
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OA210
Abstract: 10BS IR FAST RECOVERY
Text: 4855452 INTERNATIONAL RECTIFIER 02E 07924 D E 4fl55452 DQOVTEM 4 03-J23 Data Sheet No. PD-2.108 in t e r n a t io n a l , r e c t i f ie r IO R D | R30DF AND R30DFR SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 210 AMP AVG STUD MOUNTED SOFT FAST RECOVERY RECTIFIER DIODES
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R30DF
R30DFR
R30DF
2000v
1600v
R300FR18A.
OA210
10BS
IR FAST RECOVERY
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Untitled
Abstract: No abstract text available
Text: 4fl5545E DD1457b T7E • INR International s ] Rectifier IRC740 INTERNATIONAL RECTIFIER HEXFET® P ow er M O S FE T • • • • • • PD-9.570B Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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4fl5545E
DD1457b
IRC740
145J3
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5B2 rectifier
Abstract: No abstract text available
Text: imemaoonai S Rectifier bSE » s e rie s B25RIA/B25H2S internationalrectifier m SCR Power Modules 25A Features • ■ ■ ■ ■ ■ ■ ■ 4flSS4S5 D D l b s 5? I T S H I N R G la s s p a s s iv a te d ju n c tio n s fo r g re a te r re lia b ility E le c tric a lly is o la te d base p la te 3 5 0 0 V RM S
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B25RIA/B25H2S
5B2 rectifier
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IG8T
Abstract: DIODE 65A IRGKI065F06 82FL
Text: International B Rectifier PD-9.965C IRGKI065F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses
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IRGKI065F06
10KHz
50KHz
100nH
C-170
IG8T
DIODE 65A
IRGKI065F06
82FL
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PDF
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IBF20
Abstract: IC ST 201A 600PE80
Text: INTERNATIONAL RECTIFIER "4T ß F § 4 Ö S S 4 S a ODD47S4 1 Data Sheet No. PD-3.073 IN T E R N A T I O N A L I“ R R E C T I F I E R 'T'j.s''ÆO 940A RMS Hockey Puk Thyristors 600 PE SERIES Description The 60 0 P E series of converter type hockey puk thyristors use
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ODD47S4
IBF20
IC ST 201A
600PE80
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IRGNIN075M12
Abstract: diode C522 C524 DIODE
Text: PD9164 IRGNIN075M12 International S Rectifier "CHOPPER HIGH SIDE SWITCH' IGBTINT-A-PAK Low conduction loss IGBT High Side Switch -=3 VCE= 1200V lc = 75A 50-• Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGNIN075M12
50---VCE=
C-525
4fl55452
C-526
002031b
IRGNIN075M12
diode C522
C524 DIODE
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IRFS1Z0
Abstract: 75150TC
Text: • International H g Rectifier HÛSSHSE 001574Ô flb? M I N R PD-9.438D IRFS1Z0 INTERNATIONAL RECTIFIER HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount Available in Tape & Reel Fast Switching Ease of Paralleling
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OT-89
5S452
IRFS1Z0
75150TC
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D0205AB
Abstract: D0-205AB
Text: 4855452 INTERNATIONAL RECTIFIER IO R in t e r n a t i o n a l 73 73C 07174 D T"-*/-2-3 Data Sheet No. PD-2.136 r e c t if ie r D E | 4 f l 5 S 4 S e 0007174 T R23D & R23DR SERIES 1400 - 800 VOLTS RANGE 315 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES
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R23DR
D0-205AB
R23DR12A.
4flSS455
00D717fl
D0205AB
D0-205AB
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PDF
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k 3525 MOSFET
Abstract: IRFD1ZO irfd1z3
Text: HE 0 I MâSS4SH 0000300 b | Data Sheet No. PD-9.380G T-35-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEXFET TRANSISTORS IRFD1 ZO IM-CHANNEL HEXDIP IRFD1Z3 1-WÄTT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PAGKAGE 100 Volt, 2.4 Ohm, 1-Watt HEXDIP
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T-35-25
C-133
S54S2
C-134.
k 3525 MOSFET
IRFD1ZO
irfd1z3
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PDF
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4AF Series
Abstract: 8AF4 4af05 international rectifier 137
Text: ~55 INTERNATIONAL RECTIFIER 4855452 IN T E R N A T IO N A L I F|4fl554SS □DOMciB4 3 55C R E C T IF IE R 04934 Data Sheet No. PD-2.086 r~ o i - t ? ' f ï &i'¿a IOR INTERNATIONAL RECTIFIER 4AF, 8AF SERIES S5 and 50 Amp Pressfit Rectifier Diodes Major Ratings and Characteristics
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4fl554SS
4AF Series
8AF4
4af05
international rectifier 137
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transistor C239
Abstract: transistor C238
Text: International HH Rectifier PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGBF20F
10kHz)
O-220AB
C-241
TQ-220AB
C-242
transistor C239
transistor C238
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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554S2
4fl55452
10ohm
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PDF
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Untitled
Abstract: No abstract text available
Text: Jp|j-0fpi QtjOfi QI Provisional Data Sheet No. PD-9.424B IGR Rectifier JANTX2N6784 HEXFET POWER MOSFET JANTXV2N6784 [REF:MIL-PRF-19500/556] [GENERIC:IRFF210] N -C H A N N E L 200 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis
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JANTX2N6784
JANTXV2N6784
MIL-PRF-19500/556]
IRFF210]
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.1672A International IS R Rectifier IRFZ34E HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling D escription Voss= 60V
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IRFZ34E
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PDF
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BTI ML-1 94V-0
Abstract: 94V-0 BTI ML-1 BTI ML-2 94V-0
Text: I . I Bulletin 127093 rev. A 09/97 International ir k .f i 52. s e r ie s iQRRectifier FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features 150 A • F a st tu rn -o ff th y ris to r ■ Fa st re c o v e ry dio d e ■ H ig h su rge c a p a b ility
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E78996
00301hl
BTI ML-1 94V-0
94V-0 BTI ML-1
BTI ML-2 94V-0
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PDF
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en sities than com parable bipolar transistors, while
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IRGMC30U
IRGMC30UD
IRGMC30UU
O-254
4flS5455
001flb73
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PDF
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2sa 102 transistor
Abstract: No abstract text available
Text: International S Rectifier HEXFRED P D -2 .3 7 9 Provisional Data Sheet HFA35HB60 ULTRA FAST, SOFT RECOVERY DIODE 600V, 22A Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units Vbr 600 V lF AV 22 A trr 75
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HFA35HB60
00A//IS,
00A/pS,
O-254AA
4fl55455
2sa 102 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: INTE RNATIONAL RECTIFIER 4855452 "SS INTERNATIONAL Ì>Ì~jMfl554SE 0005157 55C RECTIFIER 05127 Data Sheet No. PD-2.040B INTERNATIONAL- R EC T IFIER I O R 75HQ, 85HQ SERIES 75 and 85 Amp Schottky Power Rectifiers Major Ratings and Characteristics Rating Characteristic
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jMfl554SE
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PDF
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Untitled
Abstract: No abstract text available
Text: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching
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IRFR2605)
IRFU2605)
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • 4 Ô 5 5 45 2 0 0 1 7 3 0 b Û21 PD -2.255 International S Rectifier i 63 c m q . s e r i e s SCHOTTKY RECTIFIER 160 Amp Description/Features Major Ratings and Characteristics 163CMQ. Units Characteristics 160 A 80 to 100
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163CMQ.
-55to175
163CMQ
D-351
4fl55452
D173BT
D-352
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