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    4BK POWER Search Results

    4BK POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=5 A / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation

    4BK POWER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PE12CNT15PO

    Abstract: circuit Diagram of TV receiver PE12CNT15NO PE12CNT15 PE12CNT15PC EN12978 mechanical proximity sensor PE12CNT15NC pc power supply diagram ir receiver transistor
    Text: Photoelectrics Through-beam, Transistor Output Type PE12CNT15. • • • • • • • • • • Product Description The PE12CNT. is a family of general purpose Photoelectric sensors. They are specially designed for Elevators, Escalators, Entrance control to meet the


    Original     		PE12CNT15. PE12CNT. PE12CNT15PO circuit Diagram of TV receiver PE12CNT15NO PE12CNT15 PE12CNT15PC EN12978 mechanical proximity sensor PE12CNT15NC pc power supply diagram ir receiver transistor PDF

    PB10CNT15NO

    Abstract: circuit Diagram of TV receiver EN12445 EN12453 PB10CNT15 PB10CNT15NC PB10CNT15PC PB10CNT15PO infrared led receiver 3 mm ir receiver
    Text: Photoelectrics Through-beam, Transistor Output Type PB10CNT15. • • • • • • • • • • Product Description The PB10CNT. is a through beam sensor set specially designed for Elevators, Escalators, Entrance control to meet the requirements in


    Original     		PB10CNT15. PB10CNT. PB10CNT15NO circuit Diagram of TV receiver EN12445 EN12453 PB10CNT15 PB10CNT15NC PB10CNT15PC PB10CNT15PO infrared led receiver 3 mm ir receiver PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Through-beam, Transistor Output Type PD70CNT12. • • • • • • • • • • • Product Description The PD70 sensor family of Photoelectric sensors is specially designed for Doors and Entrance control to meet the requirements in the


    Original     		PD70CNT12. UL325 PDF

    EN12453

    Abstract: EN12978 EN12445 circuit Diagram of TV receiver PB18CNT15 PB18CNT15NC PB18CNT15NO PB18CNT15PC PB18CNT15PO Optical proximity sensor through beam
    Text: Photoelectrics Through-beam, Transistor Output Type PB18CNT15. • • • • • • • • • Product Description The PB18CNT. is a through beam sensor set specific designed for safety edge sensing in industrial automatic doors. The housing is designed to


    Original     		PB18CNT15. PB18CNT. EN12453 EN12978 EN12445 circuit Diagram of TV receiver PB18CNT15 PB18CNT15NC PB18CNT15NO PB18CNT15PC PB18CNT15PO Optical proximity sensor through beam PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Retro-reflective Type PD30CNR06.SA • • • • • • • • • • • Miniature sensor range Range: 6 m Sensitivity adjustment by Potentiometer Modulated, infrared light 850 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset


    Original     		PD30CNR06. PD30CNR06 APD30-MB1 APD30-MB2 PD30CNR06 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Through-beam Type PD30CNT15.SA • • • • • • • • • • • Miniature sensor range Range: 15 m Sensitivity adjustment by potentiometer Modulated, infrared light 850 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset


    Original     		PD30CNT15. PD30CNT15 APD30-MB1 APD30-MB2 PD30CNT15 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Diffuse-reflective, Background Suppression, IR Type PD30CNB20.IS • • • • • • • • • • • • Miniature sensor range Range: 200 mm Sensitivity adjustment by Potentiometer Modulated, infrared light 850 nm Supply voltage: 10 to 30 VDC


    Original     		PD30CNB20. PD30CNB20 APD30-MB1 APD30-MB2 PD30CNB20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Retro-reflective, Polarized Type PD30CNP06.SA • • • • • • • • • • • Miniature sensor range Range: 6 m Sensitivity adjustment by Potentiometer Modulated, red light 625 nm, polarized Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset


    Original     		PD30CNP06. PD30CNP06 APD30-MB1 APD30-MB2 PD30CNP06 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectrics Diffuse-reflective Type PD30CND10.SA • • • • • • • • • • • Miniature sensor range Range: 1 m Sensitivity adjustment by Potentiometer Modulated, red light 625 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset


    Original     		PD30CND10. PD30CND10 APD30-MB1 APD30-MB2 PD30CND10 PDF

    2MX16X4

    Abstract: IS42S32400AL
    Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves


    Original     		IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg 128-MBIT 128Mb 2MX16X4 IS42S32400AL PDF

    2MX16X4

    Abstract: IS42S32400AL
    Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves


    Original     		IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg 128-MBIT 128Mb 2MX16X4 IS42S32400AL PDF

    IS42S32400L-10BI

    Abstract: No abstract text available
    Text: IS42S16800L IS42S32400L ISSI 8Meg x16 & 4Meg x 32 128-MBIT PowerSaver SYNC DYNAMIC RAM FEATURES • Clock frequency: 143, 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply


    Original     		IS42S16800L IS42S32400L 128-MBIT) latency0L-10T 100MHz IS42S16800L-7BI IS42S16800L-7TI IS42S16800L-10BI IS42S16800L-10TI IS42S32400L-10BI PDF

    Untitled

    Abstract: No abstract text available
    Text: IS42S16800L IS42S32400L ISSI 8Meg x16 & 4Meg x 32 128-MBIT PowerSaver SYNC DYNAMIC RAM FEATURES • Clock frequency: 143, 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply


    Original     		IS42S16800L IS42S32400L 128-MBIT) 100MHz IS42S16800L-7B IS42S16800L-7T IS42S16800L-10BI IS42S16800L-10T IS42S32400L-7B PDF

    L7251-3.1

    Abstract: L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 DSTH506010.1 PEF3304EV2.1 AU1329.1 A612826.1 PMB6256-V1.1
    Text: 1 Datasheet D 2DFDD D 7!F D"#$FD 8F7 8%995&'7"D 1 1 %DC78C4E91 E59133AA14A38C4E119AA713A74EC8C4E1 1 CE1731EC8C4E1998AF91 24382DA15AC7A91967191F42CDA14EA9#1 9F384EA9#1A59A8#1431FA1F7CEA91


    Original     		8C4E91 E59133AA14 13A74 8C4E19 98AF91 2DA15A C7A91967 91F42CDA1 CEA91 8C4E918 L7251-3.1 L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 DSTH506010.1 PEF3304EV2.1 AU1329.1 A612826.1 PMB6256-V1.1 PDF

    klud

    Abstract: marconi company marconi N108
    Text: N108 M INIATURE O U TPU T PENTODE APRIL, 1952 MA INDIRECTLY HEATED BASE C O N N E C T IO N S A N D V A LV E D IM E N SIO N S Base : B7G B ulb: Tubular Overall length : 64—70 Seated length : 58—64 Max. diameter : 19 mm. mm. mm. View from underside of base.


    OCR Scan     		PDF

    74L837

    Abstract: No abstract text available
    Text: g MOTOROLA SN54/74LS375 D E S C R IP T IO N — The S N 54 L S /7 4 L S 37 5 is a 4-BK D-Type Latch for use as tem porary storage fo r binary inform ation between processing lim its and in p u t/o u tp u t o r indicator units. W hen th e Enable (E) is HIGH,


    OCR Scan     		SN54/74LS375 74L837 PDF

    Untitled

    Abstract: No abstract text available
    Text: bBE D TTRTGTb D D liaO I 220 • T SA J SANYO SEMICONDUCTOR CORP LC7463M CMOS LSI *3589 Infrared Remote Control Transmitter Applications OVERVIEW PINOUT The LC7463M is a 32-key infrared remote control trans­ mitter IC that incorporates all key-scanning, oscillator


    OCR Scan     		LC7463M LC7463M 32-key PDF

    CMOS 4033

    Abstract: pin diagram ic 4033 ic 4033 internal diagram 4013 IC circuit diagram LOGIC DIAGRAM OF IC 4033 IC CMOS 4023 4013 BK
    Text: M ilitary CMOS Zero Pow er FIFOs PRELIM INARY 57C 401 /13 5 7C 402/23 57C 403 3 6 4 x 4 6 4 x 5 M em ory 12 M Hz C ascadable Conforms to MIL-STD-883, Class B (Latest Revision) Description Features/B enefits Zero standby power High-speed 12 MHz shift-ln/shlft-out data rates


    OCR Scan     		MIL-STD-883, S7C4013/23/33) 57C40X/XX CMOS 4033 pin diagram ic 4033 ic 4033 internal diagram 4013 IC circuit diagram LOGIC DIAGRAM OF IC 4033 IC CMOS 4023 4013 BK PDF

    Untitled

    Abstract: No abstract text available
    Text: W91630 SERIES Winbond Electronics Corp. ÎO-MEMORY TONE/PULSE DIALER WITH REDIAL FUNCTION GENERAL DESCRIPTION The W91630 series are Si-gate CMOS ICs that provide the signals needed for either pulse or tone dialing. The W91630 series features a ten-channel, 32-digit automatic dialing memory.


    OCR Scan     		W91630 32-digit 0523SM S23S4 PDF

    r2r resistor ladder

    Abstract: CD 4093 PIN DIAGRAM flat package details for CD 4093 IC 4093 MB88351 5l09 CD 4093 DATASHEET FPT-16P-M06 MB88351-PF MB88351-PFV
    Text: October 1991 Edition 1.0 DATA S H E ET FUJITSU MB88351 R-2R TYPE 12-BIT D/A CONVERTER WITH OPERATIONAL AMPLIFIER OUTPUT BUFFERS DESCRIPTION The Fujitsu MB88351 is an R-2R type 12-bit resolution digital-to-analog converter DAC , designed (or interfaoe with a wide range of general 4-bit and 6-bit microcontrol¡ers including Fujitsu's MB8B200 family, M8B850 family, and MB88500 family 4-bk


    OCR Scan     		12-BIT MB88351 MB8B200 MB8850 MBS8500 MB8S351 The18) r2r resistor ladder CD 4093 PIN DIAGRAM flat package details for CD 4093 IC 4093 5l09 CD 4093 DATASHEET FPT-16P-M06 MB88351-PF MB88351-PFV PDF

    Untitled

    Abstract: No abstract text available
    Text: f35 H A R R IS U U S E M I C O N D U C T O R CD4508BMS C M O S D ual 4-Bit Latch December 1992 Features Pinout CD4508BMS TOP VIEW • High-Voltage Types 20-Volt Rating • Two Independent 4-Bit Latches • Individual Master Reset tor Each 4-BK Latch • 3-State Outputs with Hlgh-lmpedance State for Bus


    OCR Scan     		CD4508BMS CD4508BMS 20-Volt 100nA PDF

    ELECTROMATIC se 110 RELAY

    Abstract: ELECTROMATIC se 110 ELECTROMATIC SR electromatic s system electromatic s system st 115 electromatic s system St 115 220 EL1808 EL Ei 33 transformer electromatic sensors RNAP230
    Text: INDUCTIVE SENSORS ikciriairalj£ Proximity-SwitchesAm plifiers : mm ♦ .1 li I • ■ - r r i - m r — «Ec > ■v;. m ESREPUBL nJD r- Namur sensor system SD 170/SD 270 • • • • oO o rlh m n n tin S - SYSTEM SD 110 2 2 0 SUPPLY 220 VAC INDUCTIVE SENSOR


    OCR Scan     		170/SD 110/SD 210/H ELECTROMATIC se 110 RELAY ELECTROMATIC se 110 ELECTROMATIC SR electromatic s system electromatic s system st 115 electromatic s system St 115 220 EL1808 EL Ei 33 transformer electromatic sensors RNAP230 PDF

    LEA-5T

    Abstract: No abstract text available
    Text: MT4LC4M4B1 S 4 MEG X 4 DRAM M IC R O N 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process


    OCR Scan     		180mW 048-cycle 24/26-Pin D15pm5 LEA-5T PDF

    Untitled

    Abstract: No abstract text available
    Text: H A -2 5 2 0 /8 8 3 H A -2 5 2 2 /8 8 3 Ha r r is Uncom pensated, High Slew Rate O perational Amplifiers January 1989 Features D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td 8S3 and Is Fully Conform ant Under the Provisions of Paragraph 1.2.1.


    OCR Scan     		10MHz 200ns PDF