4BIT DYNAMIC RAM Search Results

GM72V16

Abstract: 72V16421CT
Contextual Info: G M 72V16421C T LG Semîcon Co.,Ltd. ’ 2,097,152 WORDS x 4BIT x 2BANK SYNCHRONOUS DYNAMIC RAM _ Description Features The GM 72V16421CT is new generation synchronous dynamic RAM, organized 2,097,152 words x 4hit x 2bank. This device

Contextual Info: HY51V S 17400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)17400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17400HG/HGL offers Fast Page Mode as a high

Hitachi DSA0088

Abstract: HM51 HM514410
Contextual Info: HM514410C/CL Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory Rev. 0.0 Sep. 20, 1994 The Hitachi HM514410C/CL is a CMOS dynamic RAM organized 1,048,576-word x 4bit. HM514410C/CL has realized higher density, higher performance and various

GM71C4403CJ60

Abstract: GM71C4403CJ70 GM71C4403CJ-60 LG Semicon GM71C4403C GM71C4403C-60 GM71C4403C-70 GM71C4403C-80 GM71C4403CJ-70 GM71C4403CJ-80
Contextual Info: GM71C4403C LG Semicon Co.,Ltd. 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM Description Features * 1,048,576 Words x 4 Bit Organization * Extended Data Out Mode Capability * Single Power Supply 5V+/-10% * Fast Access Time & Cycle Time The GM71C4403C is the new generation dynamic

KM44C4102

Contextual Info: CMOS DRAM KM44C4102 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: T ie Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its Design is optimized for high performance applications

KM44C258

Abstract: KM44C1002BV
Contextual Info: KM44C1002B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

NN514256

Abstract: P26SJ-2A6 NNS14256 256Kx4bit
Contextual Info: NN514256 series Fast Page Mode CMOS 256K x 4bit Dynamic RAM DESCRIPTION The NN514256 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 4 bits. The NN514256 series is fabricated with advanced CMOS technology and designed

Contextual Info: HY51V S 16400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY ESCRIPTION The HY51V(S)16400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)16400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16400HG/HGL offers Fast Page Mode as a high

KM44C1000D

Abstract: KM44V1000D
Contextual Info: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), and

KM44C1000D

Abstract: KM44V1000D
Contextual Info: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), and

Contextual Info: GM71C S 4400C/CL LG Semicon Co, 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM Description Features The GM71C(S)4400C/CL is the new generation dynamic RAM organized 1,048,576 words x 4 bit. GM71C(S)4400C/CL has realized higher density, higher performance and various functions by

HMD8M36M18

Abstract: HMD8M36M18G
Contextual Info: HANBit HMD8M36M18G 32Mbyte 8Mx36 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M18, HMD8M36M18G GENERAL DESCRIPTION The HMD8M36M18G is a 8M x 36bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAM in 24-pin SOJ packages and two CMOS 4Mx 4bit Quad-CAS DRAM in 28pin SOJ packages

A9VC

Contextual Info: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de­

GM7IC4403

Abstract: GM71C4403C-70 71C4403CJ60
Contextual Info: GM71C4403C LG Sem icon Co.,Ltd. 1,048,576 W ORDS x 4BIT CMOS DYNAMIC RAM Features Description • • • • The GM 71C4403C is the new generation dynamic RAM organized 1,048,576 w ords x 4 bit. GM 71C4403C has realized higher density, higher performance and various functions by utilizing

nn514405

Contextual Info: NN514405 / NN514405B series EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN>a( DESCRIPTION The NN514405/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405/B series is fabricated with advanced CMOS technology and de­

nn514400

Abstract: NN514400A Nippon Steel Semiconductor
Contextual Info: NN514400/NN514400A / NN514400B series Fast Page Mode CMOS 1Mx 4bit Dynamic RAM ^ DESCRIPTION The NN514400/A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN514400/A/B series is fabricated with advanced CMOS technology and de­

KM44C1000P

Contextual Info: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), and

nn5117405

Contextual Info: NN5116405B / NN5117405B series EDO Hyper Page Mode CMOS 4M x 4bit Dynamic RAM NPN>a( DESCRIPTION The NN5116405B / NN5117405B series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 4-bits. The NN5116405B / NN5117405B series is fabricated with advanced CMOS technology and de­

Contextual Info: NN5116400B / NN5117400B series Fast Page Mode CMOS 4M x 4bit Dynamic RAM NPN a DESCRIPTION The NN5116400B / NN5117400B series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 4 bits. The NN5116400B / NN5117400B series is fabricated with advanced CMOS technology and de­

nn514406

Contextual Info: NN514405A / NN514405Bseries EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN)a( DESCRIPTION The NN514405A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405A/B series is fabricated with advanced CMOS technology and designed with innovative design techniques

Contextual Info: NN514400A/ NN514400B series Fast Page Mode CMOS 1Mx 4bit Dynamic RAM M Dm W DESCRIPTION The NN514400A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN514400A/B series is fabricated with advanced CMOS technology and designed with innovative de­

SG-60

Contextual Info: GMM7321000CS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 WORDS x 32 BIT CMOS DYNAMIC RAM MODULE Description The GMM7321000CS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package on single sides the

GMM73241

Abstract: GMM7324100cns
Contextual Info: GMM7324100CNS/SG-6/7/8 4,194,304 WORDS x 32BIT CMOS DYNAMIC RAM MODULE Description The GMM7324100CNS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bit DRAMs in 24/26 pin SOJ package on single sides the printed circuit board with decoupling