4BFLB55B Search Results

Contextual Info: 4bflb55b 00Glb73 Mfl3 H I X Y n ix Y S Thyristor Modules Thyristor/Diode Modules V mn V mm V Vmm Vow V 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MCC95 MCD95 iTAV= 2 x 116 A VRRM= 400-1800 v Type Version 1 B MCC95-06ÌO1 MCC95~08io1 MCC95-12I01

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

Contextual Info: Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol Test Conditions MDD 26 lFRMS = 2 x 60 A ^favm = 2 x 36 A VRRM =800-1800 V TO-240 AA Type MDD 26-08N1 MDD 26-12N1 MDD 26-14N1 MDD 26-16N1 MDD 26-18N1 B B B B B < < Maximum Ratings

Contextual Info: • MbflbS2b GQGlbS3 b^S H I X Y a ix Y S Thyristor Modules MCC19 iTAV= 2 x 18 A Vrpm = 600-1600 V i 1 1 > > > ; 1 1 1 > > > 700 900 1300 1500 1700 Type Version 1 B 600 800 1200 1400 1600 MCC19-06ÌO1 MCC19-08io1 MCC19-12io1 MCC19-14io1 MCC19-16io1 Symbol

thyristor st 103

Abstract: mcc95 16 101 CD-951 MCC90 MCC95-12IO1 v06v MCR-SL-S-1/thyristor st 103
Contextual Info: 4bE D • 4bfib22b G D Q i n e S » I X V I X V S CORP D IX Y S T - z s Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 >1 >i > V *» V om V 400 600 800 1200 1400 1600 MCC95 i TAV = 2 x 1 1 6 a MCD95 vRRM= 400- I 600 v Type Version 1 Version 8