4BFLB25B Search Results

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

f g megamos

Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Contextual Info: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

f g megamos

Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Contextual Info: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

GEM X 365

Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd
Contextual Info: Prelim inary data HiPerFAST IGBT IXGH24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ

Contextual Info: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi

E72873

Abstract: MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1 MDD56-16N1
Contextual Info: 4bE » • MbfibSSb 0 0 0 1 2 2 2 T « I X Y I X Y S CORP n i x Y S MDD56 Diode Modules iTAV= 2 x 71 A VRRM= 400-1600 V Vrsm V„rm Type V V Version 1 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1

j45ac

Contextual Info: □IXYS Power MOSFET Stage for Boost Converters VUM 24-05 VDSS D25 R DS on Module for Power Factor Correction 1 3 Symbol 2 7 8 = 500 V = 35 A = 0 .1 2 Q 4 6 Maximum Ratings Test Conditions 500 500 ±20 V V V Ts = 85°C Ts = 25°C : 25°C, t = <D 24 35 95

bt 2025

Abstract: VM7512
Contextual Info: □IXYS IGBT Modules Half-Bridge and Chopper Configurations High Short Circuit SOA Capability VII VII 75-12S3 VID75-12S3 VDI75-12S3 VID IC DC = 75 A VCES = 1200 V VCE(sat) = 3.4 V VDI r -•’ 3 I * -o I 8 o— M 90 Symbol Test Conditions I I O

Diode LT 023

Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 95 iTRMS = 2 x 180 A MCD 95 iTAVM =2x116A V = 800-1800 V RRM T 0 -2 4 0 AA v RSM V V DSM V DRM V V Version 1 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC T y P e rrm 95-08io1 95-12io1 95-14io1

Contextual Info: n ixY S Fast Recovery Epitaxial Diode FRED v RSM V* RRM V DSEI12 IFAVM f\ A Type V RRM 12 A 1000 V t 50 ns TO-220 AC 1 \ C V DSEi 12-10 A 1000 1 0 00 Symbol Test Conditions Maximum Ratings ^FRM T1 VJ = T1 VJM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited by TVJM

tt 2146 m

Abstract: tt 2146 IXGH9090
Contextual Info: EilXYS IXGH9090 HiPerFAST IGBT with Diode ^C 25 V CES V CE sat Lfi 48 A 600 V 2.7 V 400 ns T O -2 4 7 A D M a x im u m R a tin g s S ym bol T e s t C o n d itio n s VcHS T j = 2 5 'C to 1 5 0 X 600 V ^C G R T ,J = 2 5 'C to 1 5 0 X ; R b t = 1 M a 600