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    4A COMPLEMENTARY TRANSISTOR Search Results

    4A COMPLEMENTARY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC100ELT24DG Rochester Electronics LLC MC100ELT24 - TTL to ECL Translator, 1 Func, Complementary Output Visit Rochester Electronics LLC Buy
    54F175/B2A Rochester Electronics LLC 54F175 - D Flip-Flop, F/FAST Series, 1-Func, Positive Edge Triggered, 4-Bit, Complementary Output, TTL, CDIP16 Visit Rochester Electronics LLC Buy
    100324/VYA Rochester Electronics LLC 100324 - TTL to ECL Translator, 6 Func, Complementary Output, ECL - Dual marked (5962-9153001VYA) Visit Rochester Electronics LLC Buy
    MC100ELT24DTG Rochester Electronics LLC TTL to ECL Translator, Complementary Output, ECL, TSSOP 8 Visit Rochester Electronics LLC Buy
    100324QIX Rochester Electronics LLC TTL to ECL Translator, 6 Func, Complementary Output, BIPolar, PQCC28, PLASTIC, CC-28 Visit Rochester Electronics LLC Buy

    4A COMPLEMENTARY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD115

    Abstract: MJ2955 MJ2955 TRANSISTOR
    Text: 1165912 Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features: • • • • TO-3 DC current gain - hFE = 20 - 70 at IC = 4A dc. Collector-emitter saturation voltage-VCE (sat) = 1.1V dc (maximum) at IC = 4A dc.


    Original     		PDF 18ade PD115 MJ2955 MJ2955 TRANSISTOR

    mosfet pch 3a 60v

    Abstract: JESD97 STS4C3F60L
    Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly


    Original     		PDF STS4C3F60L STS4C3F60L mosfet pch 3a 60v JESD97

    Untitled

    Abstract: No abstract text available
    Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly


    Original     		PDF STS4C3F60L STS4C3F60L

    JESD97

    Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
    Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly


    Original     		PDF STS4C3F60L STS4C3F60L JESD97 s4c3f60l mosfet pch 3a 60v

    ZXTN07012EFF

    Abstract: ZXTP07012EFF ZXTP07012EFFTA
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F D-81541

    TS16949

    Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
    Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP07012EFF OT23F, -75mV ZXTN07012EFF OT23F OT23F D-81541 TS16949 ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150

    ZXTN25012EFH

    Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 ZXTN25012EFH ZXTP25012EFH TS16949 ZXTP25012EFHTA

    zxtp25020cfh

    Abstract: No abstract text available
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541 zxtp25020cfh

    ZXTN25015DFH

    Abstract: ZXTP25015DFH ZXTP25015DFHTA
    Text: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25015DFH -55mV ZXTN25015DFH ZXTN25015DFH ZXTP25015DFH ZXTP25015DFHTA

    ZXTN25015DFH

    Abstract: ZXTP25015DFH ZXTP25015DFHTA
    Text: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25015DFH -55mV ZXTN25015DFH ZXTN25015DFH ZXTP25015DFH ZXTP25015DFHTA

    ZXTN25020CFH

    Abstract: ZXTP25020CFH ZXTP25020CFHTA small driver igbt
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH ZXTN25020CFH ZXTP25020CFH ZXTP25020CFHTA small driver igbt

    ZXTP25020CFH

    Abstract: TS16949 ZXTN25020CFH ZXTP25020CFHTA
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541 ZXTP25020CFH TS16949 ZXTN25020CFH ZXTP25020CFHTA

    TS16949

    Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 TS16949 ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA

    marking 1d4

    Abstract: TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF
    Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN07045EFF OT23F, ZXTP07040DFF OT23F OT23F D-81541 marking 1d4 TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF

    TS16949

    Abstract: ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4
    Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN07045EFF OT23F, ZXTP07040DFF OT23F OT23F D-81541 TS16949 ZXTN07045EFF ZXTN07045EFFTA ZXTP07040DFF marking 1d4

    marking 1A3

    Abstract: ZXTN25020DFH ZXTP25020DFH ZXTP25020DFHTA
    Text: ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020DFH ZXTN25020DFH marking 1A3 ZXTN25020DFH ZXTP25020DFH ZXTP25020DFHTA

    TRANSISTOR MARKING 1d9

    Abstract: TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA
    Text: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541 TRANSISTOR MARKING 1d9 TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA

    TRANSISTOR MARKING 1d9

    Abstract: ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA
    Text: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications


    Original     		PDF ZXTP19060CFF OT23F, 100mA ZXTN19060CFF OT23F D-81541 TRANSISTOR MARKING 1d9 ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA

    ZETEX GATE DRIVER

    Abstract: MARKING 1D4
    Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN07045EFF OT23F, ZXTP07040DFF OT23F and49) 621-ZXTN07045EFFTA ZXTN07045EFFTA ZETEX GATE DRIVER MARKING 1D4

    p107 to-220

    Abstract: P102 P105 P107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
    Text: @ S A N Y O SEMICONDUCTOR NPN TIP100 TIP101 TIP102 PNP TIP105 TIP106 TIP107 60-80-100 VOLTS, 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS HIGH CURRENT GAIN hFE = 4000 typ. @3V, 4A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @4A MONOLITHIC CONSTRUCTION WITH BUILT-IN


    OCR Scan     		PDF TIP100 TIP105 TIP101 TIP106 TIP102 TIP107 tip100, tip105 tip101, tip106 p107 to-220 P102 P105 P107 TIP107

    Untitled

    Abstract: No abstract text available
    Text: D45VM Series File Number 2357 Silicon P-N-P Transistors Complementary to the D44VM Series Features: • Very Fast Switching ts < 500 ns resistive tf < 75 ns ■ Very low VCE sat j < 0.4V @ IC = 4A ■ High gain H p ç > 4 0 @ i ç = 4A TERMINAL DESIGNATIONS


    OCR Scan     		PDF D45VM D44VM D45VM-series

    Untitled

    Abstract: No abstract text available
    Text: KTA1834D/L SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURES • Low Collector Saturation Voltage : VCE sat =-0.16V (Typ.) at (Ic=-4A, IB=-0.05A). • Large Collector Current. : Ic=_10A(dc) Ic=_15A(10ms, single pulse) • Complementary pair with KTC5001D/L.


    OCR Scan     		PDF KTA1834D/L KTC5001D/L.

    KTC5001D

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC5001D/L EPITAXIAL PLANAR PNP TRANSISTOR FEATURES • Low Collector Saturation Voltage : VcE sat =0.13V(Typ.) at (Ic=4A, IB=0.05A). • Large Collector Current. : Ic=10A(dc), Ic=15A(10ms, single pulse) • Complementary pair with KTA1834D/L.


    OCR Scan     		PDF KTC5001D/L KTA1834D/L. 11II-1â KTC5001D