4MX32BIT Search Results

Contextual Info: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification

SIMM FLASH MEMORY MODULE 72pin

Contextual Info: HANBit HMF4M32M8V Flash-ROM Module 16MByte 4Mx32Bit , 72Pin-SIMM, 3.3V Design Part No. HMF4M32M8V GENERAL DESCRIPTION The HMF4M32M8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, double -sided, FR4-printed circuit

Contextual Info: KMM332F400BS-L KMM332F410BS-L DRAM MODULE KMM332F400BS-L & KMM332F410BS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0BS is a 4Mx32bits Dynamic Part Identification

sf 128 d l5

Contextual Info: KMM332V400BS-L KMM332V41OBS-L DRAM MODULE KMM332V400BS-L & KMM332V410BS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0BS is a 4Mx32bits Dynamic Part Identification

4Mx32bits

Contextual Info: M53230400CW0/CB0 M53230410CW0/CB0 DRAM MODULE M53230400CW0/CB0 & M53230410CW0/CB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0C

Contextual Info: KMM332V400CS-L KMM332V410CS-L DRAM MODULE KMM332V400CS-L & KMM332V410CS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0CS is a 4Mx32bits Dynamic RAM high density memory module. The Samsung

Contextual Info: DRAM MODULE KMM5324000BSW/BSWG KMM5324000BSW/BSWG Fast Page Mode 4M X 32 DRAM SIMM Using 4M x16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324000B is a 4Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung KMM5324000B

3g mobile MOTHERBOARD CIRCUIT diagram

Abstract: H55S1222EFP mobile MOTHERBOARD CIRCUIT diagram H55s1222
Contextual Info: 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

KMM5324000CK

Abstract: KMM5324000CKG KMM5324100CK KMM5324100CKG
Contextual Info: KMM5324000CK/CKG KMM5324100CK/CKG DRAM MODULE KMM5324000CK/CKG & KMM5324100CK/CKG with Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53240 1 00CK is a 4Mx32bits Dynamic • Part Identification RAM

Contextual Info: M53210400CW0/CB0 M53210410CW0/CB0 DRAM MODULE M53210400CW0/CB0 & M53210410CW0/CB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0C is a 4Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M5321040(1)0C

KMM332F400CS-L

Abstract: KMM332F410CS-L
Contextual Info: KMM332F400CS-L KMM332F410CS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic RAM high density memory module. The Samsung

KMM5324004BSW

Abstract: KMM5324004BSWG
Contextual Info: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages

Contextual Info: Preliminary M53230400DW0/DB0 M53230410DW0/DB0 DRAM MODULE M53230400DW0/DB0 & M53230410DW0/DB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D

Contextual Info: KMM332V400CS-L KMM332V41OCS-L DRAM MODULE KMM332V400CS-L & KMM332V410CS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0CS is a 4Mx32bits Dynamic RAM high density memory module. The Samsung

KMM5324000BSW

Abstract: KMM5324000BSWG
Contextual Info: DRAM MODULE KMM5324000BSW/BSWG KMM5324000BSW/BSWG Fast Page Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324000B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324000B consists of two CMOS 4Mx16bits DRAMs in TSOP packages

KMM5324004CK

Abstract: KMM5324004CKG KMM5324104CK KMM5324104CKG
Contextual Info: KMM5324004CK/CKG KMM5324104CK/CKG DRAM MODULE KMM5324004CK/CKG & KMM5324104CK/CKG Fast Page Mode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53240 1 04CK is a 4Mx32bits Dynamic RAM high density memory module. The Samsung

KMM5324000BSW

Abstract: KMM5324000BSWG
Contextual Info: DRAM MODULE KMM5324000BSW/BSWG KMM5324000BSW/BSWG Fast Page Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324000B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324000B consists of two CMOS 4Mx16bits DRAMs in TSOP packages

72-Pin SO-DIMM

Contextual Info: HANBit HMF4M32B8V Flash-ROM Module 16MByte 4Mx32Bit , 72Pin-SO-DIMM, 3.3V Design Part No. HMF4M32B8V GENERAL DESCRIPTION The HMF4M32B8V is a high-speed flash read only memory (FROM) module containing 8,388,608words organized in a x32bit configuration. The module consists of eight 1M x 16 FROM mounted on a 72-pin SO-DIMM type, double - sided, FR4printed circuit board.

SIMM FLASH MEMORY MODULE 72pin

Contextual Info: HANBit HMF4M32M8VGL Flash-ROM Module 16MByte 4Mx32Bit , 72Pin-SIMM, 3.3V Design Part No. HMF4M32M8VGL GENERAL DESCRIPTION The HMF4M32M8VGL is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, double -sided, FR4-printed circuit

KM44V4104CS

Contextual Info: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification

hynix ddr ram

Abstract: H5MS1222EFP
Contextual Info: 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

KMM5324

Contextual Info: Preliminary DRAM MODULE KMM5324004ASW/ASWG KMM5324004ASW/ASWG EDO Mode 4M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5324004A is a 4Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KM M 5324004A

Contextual Info: M53210400DW0/DB0 M53210410DW0/DB0 DRAM MODULE M53210400DW0/DB0 & M53210410DW0/DB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0D is a 4Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M5321040(1)0D

Contextual Info: Preliminary M53210400DW0/DB0 M53210410DW0/DB0 DRAM MODULE M53210400DW0/DB0 & M53210410DW0/DB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0D is a 4Mx32bits Dynamic RAM • Part Identification