4AS5452 Search Results

Contextual Info: HE D I 4AS5452 □ Ga'mEM S | Data Sheet No. PD-9.360E INTERNATIONAL RECTIFIER !I “ R I _ INTERNATIONAL RECTIFIER T-39-19 HEXFET TRANSISTORS P-CHANNEL POWER MOSFETs TO-39 PACKAGE -1 0 0 Volt, 0.30 Ohm HEXFET T h e H EXFET® technology is the key to International Rectifier's

IRLF130

Abstract: SS452 mosfet b44 diode b44
Contextual Info: Preliminary Data Sheet No. PD-9.659 INTERNATIOIM AL R E C T IFIE R r i o R REPETITIVE AVALANCHE AND dv/dt RATED IRLF130 HEXFET TRANSISTORS LOGIC LEVEL L SERIES N-CHANNEL 100 Volt, 0.20 Ohm Logic Level HEXFET® TO-205AF TO-39 Hermetic Package The Logic Level ‘L’ series of power MOSFETs are designed

T3D DIODE

Abstract: 2n7226 mosfet k 1357 T3D 76 T3D 40 DIODE 2N7228 JANTX T3D 65 diode T3D 53 diode t3d diode type T3D 83 DIODE
Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM450 SN72S8 JANTX2N7228 JANTXV2N7228 ;n N-CHANNEL [REF: MIL-S-135OO/502] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

c998

Contextual Info: I n t ^ m ^ t ì O n ^ ì l provisional D ata S heet P D -9 .1 188 ^ R e c tifie r IRGNIN075K06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT High Side Switch -O V ce =600V z 4 c ^ r" 'S. •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"

GE DIODE

Abstract: C769
Contextual Info: International [ragRectifier PD-9.961 B IRGKI050U06 "C H O P P E R " IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch o3 •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: Provisional Data Sheet No. PD-9.1390 International I O R Rectifier R E P E T IT IV E A V ALAN CHE A N D H EX FET T R A N S IS T O R dv/dt R A TED IR H 7450S E N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500 Volt, 0.51Q, (SEE) RAD HARD HEXFET

Contextual Info: P D - 9.1574 International I R Rectifier IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

Contextual Info: Bulletin 12021/A International [^Rectifier 3oohf R s e r i e s STANDARD RECOVERY DIODES Stud Version 300A Features • H igh c u rre n t c a rry in g c a p a b ility ■ H igh s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1 200V V RRM ■ S tu d c a th o d e and s tu d a n o d e v e rs io n

Contextual Info: Bulletin 12031/B International I I]Rectifier 70/300U R .D SERIES STANDARD RECOVERY DIODES Stud Version Features D iffu sed d io d e W id e c u rre n t ra n g e High v o lta g e ra tin g s up to 1 6 0 0 V H igh s u rg e c u rre n t c a p a b ilitie s S tu d c a th o d e and stud a n o d e ve rs io n

Contextual Info: International ioR Rectifier IRLR024 IRLU024 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating Surface Mount IRLR024 Straight Lead (IRLU024) Available in Tape & Reel Logic-Level Gate Drive PD-9.625A 46S5452 DDlS'iSfl S7fl * I N R INTERNATIONAL R E C T IF IE R

Contextual Info: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching

Contextual Info: P D - 9.1270F International l R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel

Contextual Info: P D - 9 .1 5 1 4 A International IÖR Rectifier IR F 1 3 1 0 N S PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDss = 100V

Contextual Info: International I R Rectifier Data Sheet No. PD-6.045C IR 2 1 0 3 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V

Contextual Info: Provisional Data Sheet No. PD-9.1555 International IÖR Rectifier HEXFET POWER MOSFET IRFNG40 N- CHA N N E L 1000 Volt, 3 .5 0 HEXFET H E X F E T techn o lo g y is th e key to Intern ation al Rectifier’s advanced line of power M O S F E T transis­ tors. The efficient geom etry achieves very low onstate resistance combined with high transconductance.

ST203C

Contextual Info: Bulletin 125176/A International S Rectifier ST203C.C s e r ie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • M e ta l c a s e w ith c e ra m ic in s u la to r ■ In te rn a tio n a l s ta n d a rd c a s e T 0 -2 0 0 A B A -P U K ■ A ll d iffu s e d d e s ig n

Contextual Info: Bulletin 125168/B International §?§Rectifier ST380C.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features C en ter am plifying gate M etal ca se with ce ram ic insulator International standard ca se T 0 -2 0 0 A B E -P U K Low profile hockey-puk to in crease cu rren t-carryin g capability

150L120A

Abstract: 150LA 45L100 2088a BS3934 cr 29c BS9300 45L15 150K-A 150L80A
Contextual Info: 73 DE|4fi5545H 0007350 3 | Data Sheet No. PD-2.088A 73C 07350 4855452 INTERNATIONAL RECTIFIER D T -a /-3-/ in t e r n a t io n a l r e c t if ie r 45L, 15QK-A, 1SOL-A, 150K5 SERIES 1 5 0 Amp Power Silicon Rectifier Diodes Description Major Ratings and Characteristics

1N4044

Abstract: 1N4045 1N4046 1N4047 1N4048 1N4049 kve 100 1N404 1n4* rectifier
Contextual Info: 485545? INTERNATIONAL RECTIFIER 73C 0 7 3 4 6 „ ÏF|4fiSS4SE 000734t, 1 |~~ ^ 73 D T~ Z 3 Data Sheet No. PD-2.091A INTERNATIONAL RECTIFIER 1 1 M 4 0 4 4 S E R I E S 2 7 5 Amp Avg Power Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics

79CU

Contextual Info: International ¡1 !Rectifier PD9969B IRGNI050U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V «Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

1117s

Abstract: transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36
Contextual Info: INTERNATIONAL RECTIFIER 4Ö5S4S2 00l0bQ3 T • 2t.E D Data Sheet No. PD-9.668 • 7 3*?-03 - - International ÜH Rectifier INSULATED GATE BIPOLAR TRANSISTOR BOOV, 34A FEATURES 600V, 34A, TO-220AB IGBT International R ectifier’s IR G series of Insulated G ate

Contextual Info: International ÜÔSSMSS 001 Sb7 b Ö40 • INR i“R Rectifier PD-9.525D IRFR220 IRFU220 HEXFET Power M O SFET bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR220 Straight Lead (IRFU220) Available in Tape & Reel

Contextual Info: Bulletin 12037 International Ö Rectifier SERIES 45L R , 150K/L /KS(R) STANDARD RECOVERY DIODES Stud Version Features Alloy diode High current carrying capability High voltage ratings up to 1000V High surge current capabilities Stud cathode and stud anode version

Contextual Info: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET