4A554S5 Search Results

70U30

Abstract: so42 70U40 diode 300U40A 70U120 300U40A 300u80 70U10 DIN41887 70U20
Contextual Info: _ INTERNATIONAL RECTIFIER T 73 | Data Sheg.t No. PD-2.090A 4A554S5 □□073Sti T-0 hX3 4 | INTERNATIONAL RECTIFIER IOR 7OU, 300U-A SERIES 8 5 0 and 3 0 0 Amp Avg Power Silicon Rectifier Diodes Major Ratings and Characteristics Description and Features

Contextual Info: INTERNATIONAL RECTIFIER XOH 73 dF | 4A554S5 QD0bTÖ3 4 | ~ T- Data Sheet No. PD-3.151 i n t e r n a t i o n a l r e c t i f ie r S34DF & S34DFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 ¿/s 400 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

WE VQE 11 E

Abstract: DIODE 65A IRGT1065F06 FF1000
Contextual Info: International Ö R edffler PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses VCE = 600V lc = 65A

Contextual Info: PD - 5.025A International [iggRectifier CPV364MU IGBT SIP MODULE Ultra-Fast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz

D687

Contextual Info: Bulletin 12075/C International l i i Rectifier SD703C.L SERIES FAST RECOVERY DIODES Hockey Puk Version Features H igh p o w e r F A S T re c o v e ry d io d e s e rie s 2 .0 to 3 .0 |js re c o v e ry tim e H igh v o lta g e ra tin g s up to 2 5 0 0 V H igh c u rre n t c a p a b ility

Contextual Info: International í«? Rectifier PD-9.967C IRGKI165F06 “CHOPPER" IGBTINT-A-PAK Fast Speed IGBT Vce=600V • Rugged Design • Simple gate-drive • Fast operation up to 10K H z hard switching, or 50 K H z resonant • Switching-Loss Rating includes all "tail"

Contextual Info: International tor;Rectifier PD-2.442 HFA100MD60C Ultrafast, Soft Recovéry Diode HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V LUG LUG LUG TERMINAL TERMINAL TERMINAL ANODE 1 CATHODE ANODE2

IRGBC-20

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • ^ 5 5 4 5 2 QDlOSflS 1 ■ Data Sheet No. PD-9.626A T- INSULATED GATE BIPOLAR TRANSISTOR -03 International @ ^ 3 Rectifier IR G B C SO GOOV, 1 3 A FEATURES 600V, 13A, T0-220AB IGBT International Rectifier's IRG series of Insulated Gate

Contextual Info: International iTORjRecUner PD - 9.1246B IRF7404 p r e l im in a r y HEXFET Power M OSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

Contextual Info: International I! !Rectifier PD-9.973B IRGNI065F06 Fast Speed IGBT "CHOPPER" IGBTINT-A-PAK High Side Switch -.Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail"

Contextual Info: PD - 9.1307A International IGR Rectifier IRLZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss= 55V ^D S o n =

y911

Abstract: 100MS
Contextual Info: 4 8 55452 INTERNATIONAL R E C T t Ì” d I HñSSMSS 0G070S5 J. | I« R | in te r n a tio n a l r e c t if ie r _ T"~ 2 , 5 " Data Sheet No. PD-3.163 IN TERNATI ONAL RECTIFIER 73 D E | 405545E D0070SS 1 S34BF & S34BFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 fjs