49E HALL EFFECT Search Results

49E HALL EFFECT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

49E HALL EFFECT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
49e hall Abstract: 49e hall effect Hall sensor 49e Text: SS49E Linear Hall Effect Sensor Features ─ ─ ─ ─ ─ ─ Miniature construction Low-Noise Output 4.5 V to 6 V Operation Magnetically Optimized Package Linear output for circuit design flexibility Temperature range of -40 °C to 150 °C 3 pin SOT23 suffix SO	Original	PDF	SS49E SS49E OT-23 SS49EUA SS49ESOT OT-23 SS49KUA SS49KSOT 49e hall 49e hall effect Hall sensor 49e
Untitled Abstract: No abstract text available Text: US2882 Bipolar Hall Switch – Very Hiigh Sensitivity Features and Benefits Application Exam mples 1 Wide operating voltage range frrom 3.5V to 1 1 1 1 1 1 1 1 1 1 1 1 1 24V Very high magnetic sensitivity CMOS technology Chopper-stabilized amplifier sta tage	Original	PDF	US2882 46F4B C89E6 4634B3EAE
Untitled Abstract: No abstract text available Text: US2881 Bipolar Hall Switch – Very Hiigh Sensitivity Features and Benefits Application Exam mples 1 Wide operating voltage range frrom 3.5V to 1 1 1 1 1 1 1 1 1 1 1 1 1 24V Very high magnetic sensitivity CMOS technology Chopper-stabilized amplifier sta tage	Original	PDF	US2881 1234256789A348 B2A3CDE89A348 888F4 EC2489A3488 46F4B C89E6 4634B3EAE 462946F49 C4F23
mcz 300 1bd Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode Text: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION	Original	PDF	128bit Division/e-Busin125 mcz 300 1bd SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
g41 MOTHERBOARD pcb CIRCUIT diagram Abstract: 30F131 AV12 BA09 BC13 JTAG MIPS hall ic 49e EY-L520E-DP 49e hall Text: Alpha 21164 Microprocessor Data Sheet Order Number: EC–QAEPC–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts This document supersedes the Alpha 21164 Microprocessor Data Sheet EC–QAEPB–TE . December 1995 Possession, use, or copying of the software described in this publication is authorized only	Original	PDF
49e hall Abstract: 49e hall effect ba05 regulator hall ic 49e IRF 5740 Hall ah42 30F131 w10b protection circuits wb 7a3 AV12 Text: Alpha 21164 Microprocessor Data Sheet Order Number: EC–QAEPD–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts This document supersedes the Alpha 21164 Microprocessor Data Sheet EC–QAEPC–TE . July 1996 Possession, use, or copying of the software described in this publication is authorized only	Original	PDF
49e hall Abstract: ba05 regulator 30f131 49e hall effect hall ic 49e Alpha 21164-333 Alpha 21164-P1 AXP 188 IC BA05 AV12 Text: Alpha 21164 Microprocessor Data Sheet Order Number: EC–QAEPD–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts This document supersedes the Alpha 21164 Microprocessor Data Sheet EC–QAEPC–TE . July 1996 Possession, use, or copying of the software described in this publication is authorized only	Original	PDF
IRF 5218 Abstract: axp 193 IRF 547 MOSFET smd ag05 transistor EY-L520E-DP KRE 101 1916 mbx 202 transistor smd t06 SMD Transistor Y02 49e hall Text: Alpha 21164 Microprocessor Hardware Reference Manual Order Number: EC–QAEQB–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts This preliminary document supersedes the Alpha 21164 Microprocessor Hardware Reference Manual EC–QAEQA–TE.	Original	PDF	publication24, IRF 5218 axp 193 IRF 547 MOSFET smd ag05 transistor EY-L520E-DP KRE 101 1916 mbx 202 transistor smd t06 SMD Transistor Y02 49e hall
n channel mosfet 500 mA 400 v Abstract: 30F131 P Channel Power MOSFET IRF BC 945 transistor MOTHERBOARD Chip Level MANUAL mbx 204 74 ba05 49e hall effect SMD D62 high gain jfet amplifier 206 transistor specification sheet Text: Alpha 21164 Microprocessor Hardware Reference Manual Order Number: EC–QAEQD–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts This preliminary document supersedes the Alpha 21164 Microprocessor Hardware Reference Manual EC–QAEQC–TE .	Original	PDF	publicatio26, n channel mosfet 500 mA 400 v 30F131 P Channel Power MOSFET IRF BC 945 transistor MOTHERBOARD Chip Level MANUAL mbx 204 74 ba05 49e hall effect SMD D62 high gain jfet amplifier 206 transistor specification sheet
hall ic 49e Abstract: 49e hall Hall ah42 Text: 1 About This Data Sheet This d a ta sheet provides a technical overview of the Alpha 21164 microprocessor, including: • Functional units • Signal descriptions • E xternal interface • In te rn al processor register IPR sum m ary • Privileged architecture library code (PALcode) instructions	OCR Scan	PDF	4113b HH3-15A 1-800-678-IEEE hall ic 49e 49e hall Hall ah42