49/DIODE 66A Search Results

Contextual Info: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

max10042

Contextual Info: APTC60AM42F2G Phase leg Super Junction MOSFET Power Module VDSS = 600V RDSon = 42mΩ max @ Tj = 25°C ID = 66A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 16 15 14 13

marking 66a

Abstract: FDB66N15
Contextual Info: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

Contextual Info: APTC60AM42F2G Phase leg Super Junction MOSFET Power Module VDSS = 600V RDSon = 42m max @ Tj = 25°C ID = 66A @ Tc = 25°C Application • Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control 16 15 14 13

Contextual Info: Laser Diodes PL63/65/67 Series Visible Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Visible Series of laser diodes. These units are available in ready-to-use, fiber-coupled packages, including FC, ST, and SC receptacles, as well as fiber- pigtailed

Contextual Info: PD -5.05 5 In te rn a tio n a l K SR Rectifier PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IG B T technology V c E S = 600 V • UltraFast: Optim ized for high operating frequencies 8 -4 0 kH z in hard switching, >200

Diode SMD SJ 66A

Contextual Info: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint

Contextual Info: International IÔ R Recti fi 6 f PD -5.05 5A PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-Fast Speed IGBT Features V c e s = 600 V • G en eratio n 4 IG BT tech nology • U ltraFast: O ptim ize d for high operating fre q u e n cie s 8 -4 0 kH z In hard sw itching, >200

Contextual Info: International I«R Rectifier PD -5.055A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 100 T S 6 0 U Ultra-Fast Speed IGBT Features V qes — 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IR 006

Abstract: IRF7521D1
Contextual Info: P D -9.1646 International lö R Rectifier • • • • • PRELIMINARY FETKY IRF7521D1 MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low Vp Schottky Rectifier Generation V T echnology Micro8 Footprint

IRF7501

Contextual Info: PD - 91265H IRF7501 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2

Contextual Info: I , ,• In te rn a tio n a l X O R I Rectifier P D - 9.1646/ p r e lim in a r y IR F 7 5 2 1 D 1 FE TKY M OSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low V p Schottky Rectifier • Generation VTechnology

GE 443

Abstract: GA100TS60U
Contextual Info: PD -5.055A PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

IRF7521D1

Abstract: 9164
Contextual Info: PD-91646C IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 VDSS = 20V

GE 443

Abstract: GA100TS60U
Contextual Info: PD -50055B GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GE 443

Abstract: GA100TS60U
Contextual Info: PD -5.055A PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

IRF7501

Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1265E IRF7501 HEXFET Power MOSFET l l l l l l l 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel

71A marking

Abstract: AN-994 IRL1004L IRL1004S IRL3803
Contextual Info: PD - 9.1644 IRL1004S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l l l Logic-Level Gate Drive Surface Mount IRL1004S Low-profile through-hole (IRL1004L) Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching

DIODE D3S 90

Contextual Info: P D - 9 .1 6 4 4 Internationa lO R Rectifier IRL1004S/L PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount IRL1004S • Low-profile through-hole (IRL1004L) • Advanced Process Technology • Surface Mount • Ultra Low On-Resistance

IRF7501

Contextual Info: PD - 91265H IRF7501 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2

smd diode S6 66a

Abstract: REGULATOR SMD MARKING CODE ASC
Contextual Info: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

IRF7507

Contextual Info: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8

IRF7507

Contextual Info: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8

Diode SMD ED 7a

Abstract: IRF7507 smd 10 20U diode smd ED 66a EE 19B transformer
Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1269D IRF7507 PRELIMINARY IRF7507 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel