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    4860N Search Results

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    4860N Price and Stock

    UMW NTD4860NT4G

    MOSFET N-CH 25V 10.4A/65A DPAK
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    DigiKey NTD4860NT4G Cut Tape 2,500 1
    • 1 $0.66
    • 10 $0.44
    • 100 $0.66
    • 1000 $0.21539
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    NTD4860NT4G Digi-Reel 2,500 1
    • 1 $0.66
    • 10 $0.44
    • 100 $0.66
    • 1000 $0.21539
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    NTD4860NT4G Reel 2,500 2,500
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    Rochester Electronics LLC NTD4860NT4G

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey NTD4860NT4G Bulk 750
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    onsemi NTD4860NT4G

    MOSFET N-CH 25V 10.4A/65A DPAK
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    Bristol Electronics NTD4860NT4G 1,740
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    Rochester Electronics NTD4860NT4G 30,660 1
    • 1 $0.385
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    • 1000 $0.3273
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    TME NTD4860NT4G 1
    • 1 $0.738
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    • 100 $0.368
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    Flip Electronics NTD4860NT4G 2,078
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    Flip Electronics NTD4860NT4G

    MOSFET N-CH 25V 10.4A/65A DPAK
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    DigiKey NTD4860NT4G Bulk 2,078
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    Rochester Electronics LLC NTD4860NT4H

    RF MOSFET 25V DPAK
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    DigiKey NTD4860NT4H Bulk 952
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    Find more 4860N price and stock on Findchips.com

    4860N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    60NG

    Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
    Text: 4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N

    RR264M-400

    Abstract: No abstract text available
    Text: RR264M-400 Diodes Rectifying diode RR264M- 400 zApplications General rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) High reliability.


    Original     		PDF RR264M-400 RR264M- OD-123 RR264M-400

    4860ng

    Abstract: 60NG 369D NTD4860N
    Text: 4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4860N NTD4860N/D 4860ng 60NG 369D NTD4860N

    RR264M-400

    Abstract: 4860N
    Text: RR264M-400 Diodes Rectifying diode RR264M- 400 zApplications General rectification zExternal dimensions Unit : mm zLand size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU)


    Original     		PDF RR264M-400 RR264M- OD-123 RR264M-400 4860N

    60NG

    Abstract: No abstract text available
    Text: 4860N Power MOSFET 25 V, 65 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4860N NTD4860N/D 60NG

    ntd4860n-1g

    Abstract: No abstract text available
    Text: 4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4860N NTD4860N/D ntd4860n-1g