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    4835N Search Results

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    4835N Price and Stock

    Rochester Electronics LLC NTMFS4835NT3G

    MOSFET N-CH 30V 13A/130A 5DFN
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    DigiKey NTMFS4835NT3G Bulk 701
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    onsemi NTMFS4835NT3G

    MOSFET N-CH 30V 13A/130A 5DFN
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    DigiKey NTMFS4835NT3G Reel
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    Rochester Electronics NTMFS4835NT3G 325,000 1
    • 1 $0.4117
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    • 100 $0.387
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    onsemi NTMFS4835NT1G

    MOSFET N-CH 30V 13A/130A 5DFN
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    Bristol Electronics NTMFS4835NT1G 1,297
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    Rochester Electronics NTMFS4835NT1G 824,741 1
    • 1 $0.5663
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    Rochester Electronics LLC NTMFS4835NT1G

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey NTMFS4835NT1G Bulk 510
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    RAF Electronic Hardware M0548-35-N

    Standoffs & Spacers Rnd Metric Spcr 6mm 19mm L X M3.5
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    Mouser Electronics M0548-35-N
    • 1 $1.61
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    Newark M0548-35-N Bulk 346 303
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    4835N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    PDF NTMFS4835N AND8195/D NTMFS4835N/D

    4835n

    Abstract: NTMFS4835N NTMFS4835NT1G NTMFS4835NT3G
    Text: 4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    PDF NTMFS4835N NTMFS4835N/D 4835n NTMFS4835N NTMFS4835NT1G NTMFS4835NT3G

    mosfet 4835n

    Abstract: 4835N NTMFS4835NT1G NTMFS4835N NTMFS4835NT3G
    Text: 4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


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    PDF NTMFS4835N NTMFS4835N/D mosfet 4835n 4835N NTMFS4835NT1G NTMFS4835N NTMFS4835NT3G

    4835N

    Abstract: mosfet 4835n NTMFS4835N NTMFS4835NT1G NTMFS4835NT3G
    Text: 4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    PDF NTMFS4835N AND8195/D NTMFS4835N/D 4835N mosfet 4835n NTMFS4835N NTMFS4835NT1G NTMFS4835NT3G

    4835n

    Abstract: power mosfet so8 FL NTMFS4835N NTMFS4835NT1G NTMFS4835NT3G
    Text: 4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


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    PDF NTMFS4835N NTMFS4835N/D 4835n power mosfet so8 FL NTMFS4835N NTMFS4835NT1G NTMFS4835NT3G

    4835n

    Abstract: mosfet 4835n
    Text: 4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    PDF NTMFS4835N AND8195/D NTMFS4835N/D 4835n mosfet 4835n

    4835n

    Abstract: mosfet 4835n
    Text: 4835N Product Preview Power MOSFET 30 V, 104 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


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    PDF NTMFS4835N NTMFS4835N/D 4835n mosfet 4835n

    4835N

    Abstract: NTMFS4835N NTMFS4835NT1G NTMFS4835NT3G
    Text: 4835N Advance Information Power MOSFET 30 V, 104 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original
    PDF NTMFS4835N NTMFS4835N/D 4835N NTMFS4835N NTMFS4835NT1G NTMFS4835NT3G

    Untitled

    Abstract: No abstract text available
    Text: 4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTMFS4835N NTMFS4835N/D

    4835N

    Abstract: mosfet 4835n
    Text: 4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTMFS4835N NTMFS4835N/D 4835N mosfet 4835n

    4835N

    Abstract: mosfet 4835n NTMFS4835NT1G NTMFS4835N onsemi Marking LG NTMFS4835NT3G
    Text: 4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices* http://onsemi.com


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    PDF NTMFS4835N AND8195/D NTMFS4835N/D 4835N mosfet 4835n NTMFS4835NT1G NTMFS4835N onsemi Marking LG NTMFS4835NT3G

    CQ3P-40N

    Abstract: CQ3P-40M Triacs CQ3P/40N CQ218-30D CQ2181-40M CQ218-30B CQ218-30M CQ218-45B CQ218-45D CQ218I-40B
    Text: m acs Continued IT (AMPS) 30 35 @ TC (°C) 90 90 90 90 90 ITSM (AMPS) 250 300 300 300 300 45 40 1 4 <S> f 1 TO-218 TO-48 CASE TO-3P TO-218 ISOL ISOLATED ISOLATED TO-218 V r r m (VOLTS) 200 C Q 218-30B * C Q 48-35B* C Q 3P-40B C Q 218I-40B C Q 218-45B 400


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    PDF O-218 O-218 CQ218-30B* CQ48-35B* CQ3P-40B CQ218I-40B CQ218-45B CQ218-30D* CQ48-35D* CQ3P-40N CQ3P-40M Triacs CQ3P/40N CQ218-30D CQ2181-40M CQ218-30B CQ218-30M CQ218-45B CQ218-45D

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan
    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    BTA08-600C equivalent

    Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
    Text: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B


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    PDF Z0409ME Z0409MF Z0409NE Z0409NF Z0410BE Z0410BF Z0410DE Z0410DF Z0410ME Z0410MF BTA08-600C equivalent BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465

    BRX49 equivalent

    Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
    Text: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number


    OCR Scan
    PDF 1N270 1N276 1N283 1N295 1N457A 1N703A 1N705A 1N746A 1N747A 1N750A BRX49 equivalent FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208