Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description
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ZXMS6004SG
480mJ
ZXMS6004SG
Log62-3154
D-81541
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ZXMS66004SGTA
Abstract: zxms6004 design ideas TS16949 ZXMS6004SG zxms66004
Text: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description
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Original
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PDF
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ZXMS6004SG
480mJ
ZXMS6004SG
Level1362-3154
D-81541
ZXMS66004SGTA
zxms6004
design ideas
TS16949
zxms66004
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Untitled
Abstract: No abstract text available
Text: ZXMS6004SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Features and Benefits ADVANCE INFORMATION Product Summary • Continuos drain source voltage On-state resistance 60V 500mΩ Nominal load current VIN = 5V Clamping Energy
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ZXMS6004SG
480mJ
ZXMS6004SG
DS32247
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50n6s2d
Abstract: FGH50N6S2D 50n6s2 LD26 150a 400v diode bridge fgh50n6s
Text: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau
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FGH50N6S2D
FGH50N6S2D
100kHz
200kHZ
50n6s2d
50n6s2
LD26
150a 400v diode bridge
fgh50n6s
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50N6S2
Abstract: 50N6 FGH50N6S2 FGH50N6S2D LD26 TA49392
Text: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices
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FGH50N6S2
FGH50N6S2
100kHz
50N6S2
50N6
FGH50N6S2D
LD26
TA49392
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Untitled
Abstract: No abstract text available
Text: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau
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FGH50N6S2D
FGH50N6S2D
100kHz
200kHZ
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50N6S2D
Abstract: 50N6 FGH50N6S2D TA49344 TA49392 LD26
Text: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau
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FGH50N6S2D
FGH50N6S2D
100kHz
200kHZ
50N6S2D
50N6
TA49344
TA49392
LD26
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IRFM054
Abstract: No abstract text available
Text: IRFM054 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)
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IRFM054
254AA
IRFM054
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Untitled
Abstract: No abstract text available
Text: ZXMS6004SG Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • • On-State Resistance Nominal Load Current VIN = 5V
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ZXMS6004SG
ZXMS6004SG
480mJ
DS33610
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IRF054SMD
Abstract: No abstract text available
Text: SEME IRF054SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRF054SMD
00A/ms
300ms,
IRF054SMD
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IRFN054SMD
Abstract: No abstract text available
Text: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN054SMD
00A/ms
300ms,
IRFN054SMD
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ZXMS6006SG
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • • Nominal load current VIN = 5V
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ZXMS6006SG
480mJ
AEC-Q101
DS35141
ZXMS6006SG
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IRF054SM
Abstract: No abstract text available
Text: SEME IRF054SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 45A 0.027W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRF054SM
220SM
00A/ms
300ms,
IRF054SM
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50N6S2
Abstract: FGH50N6S2 FGH50N6S2D LD26
Text: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices
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FGH50N6S2
FGH50N6S2
100kHz
200kHZ
50N6S2
FGH50N6S2D
LD26
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NTE2923
Abstract: No abstract text available
Text: NTE2923 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID
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NTE2923
NTE2923
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6006SG ADV AN CE I N FORM AT I ON 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • •
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PDF
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ZXMS6006SG
480mJ
ZXMS6006SG
DS35141
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4600 mosfet
Abstract: MOSFET 20V 45A
Text: SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 45A Ω 0.027Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRFN054
220SM
300ms,
4600 mosfet
MOSFET 20V 45A
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50n6s2
Abstract: TA49392 FGH50N6S2 FGH50N6S2D LD26 igbt full h bridge 25A 0640
Text: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices
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Original
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PDF
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FGH50N6S2
FGH50N6S2
100kHz
200kHZ
50n6s2
TA49392
FGH50N6S2D
LD26
igbt full h bridge 25A
0640
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Untitled
Abstract: No abstract text available
Text: S EM E IRF054SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRF054SMD
00A/ms
300ms,
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Untitled
Abstract: No abstract text available
Text: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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PDF
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IRFN054SMD
00A/ms
300ms,
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Untitled
Abstract: No abstract text available
Text: im iFFI im SEME IRF054SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 0.25 3.5 3.0 V Dss 60V I. *D(cont) 45A W -» i ^DS(on) 0.027Q A CD FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE TT • SMALL FOOTPRINT - EFFICIENT USE OF
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OCR Scan
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PDF
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IRF054SM
T0-220SM
300ms,
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t1ls
Abstract: No abstract text available
Text: mi É tti INI IRFM054 SEME LAB MECHANICAL DATA N-CHANNEL POWER MOSFET D im e nsio ns in mm inches 1 3 .5 9 ( 0 .5 3 5 ) 6 .3 2 ( 0 . 2 4 9 ) 1 3 .8 4 ( 0 .5 4 5 ) 6 .6 0 ( 0 . 2 6 0 ) 3 .5 3 ( 0 . 1 3 9 ) 3 .7 8 ( 0 . 1 4 9 ) " - *] 1 . 0 2 ( 0 .0 4 0 )
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OCR Scan
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PDF
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IRFM054
-254AA
t1ls
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Untitled
Abstract: No abstract text available
Text: Mil W llll : SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET VDSS 11.5 2.0 3.5 60V 45A 0.027Q 0.25 3.5 I D(cont) 3.0 ^D S (on) iC FEATURES -1- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF
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OCR Scan
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PDF
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IRFN054
O-220SM
480mJ
300ms,
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Untitled
Abstract: No abstract text available
Text: mi iFFi Nil SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 0.25 3.0 V DSS 60V I D(cont) 45A 0.027a ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o> L I 1'_ • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.
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OCR Scan
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PDF
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IRFN054
O-220SM
00A/p
300ms,
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