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    4805N Search Results

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    4805N Price and Stock

    UMW NTD4805NT4G

    MOSFET N-CH 30V 12.7A/95A DPAK
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    DigiKey NTD4805NT4G Digi-Reel 2,500 1
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    NTD4805NT4G Cut Tape 2,500 1
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    NTD4805NT4G Reel 2,500 2,500
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    Rochester Electronics LLC NTD4805NT4G

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey NTD4805NT4G Bulk 562
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    onsemi NTD4805NT4G

    MOSFET N-CH 30V 12.7A/95A DPAK
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    NTD4805NT4G Digi-Reel 1
    • 1 $1.17
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    NTD4805NT4G Cut Tape
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    Bristol Electronics NTD4805NT4G 3,729
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    Rochester Electronics NTD4805NT4G 585,524 1
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    TME NTD4805NT4G 1
    • 1 $0.829
    • 10 $0.746
    • 100 $0.592
    • 1000 $0.553
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    onsemi NTD4805N-1G

    MOSFET N-CH 30V 12.7A/95A IPAK
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    Bristol Electronics NTD4805N-1G 600
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    onsemi NVD4805NT4G

    MOSFET N-CH 30V 12.7A/95A DPAK
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    4805N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4805ng

    Abstract: 369D NTD4805N
    Text: 4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4805N NTD4805N/D 4805ng 369D NTD4805N

    369D

    Abstract: NTD4805N mosfet K 2865
    Text: 4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS


    Original
    PDF NTD4805N NTD4805N/D 369D NTD4805N mosfet K 2865

    369D

    Abstract: NTD4805N NTD4805NT4G
    Text: 4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4805N NTD4805N/D 369D NTD4805N NTD4805NT4G

    369AA

    Abstract: No abstract text available
    Text: 4805N, 4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features •     Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − 4805N


    Original
    PDF NTD4805N, NVD4805N AEC-Q101 NTD4805/D 369AA

    4805N

    Abstract: No abstract text available
    Text: 4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4805N NTD4805N/D 4805N

    Untitled

    Abstract: No abstract text available
    Text: 4805N, 4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − 4805N


    Original
    PDF NTD4805N, NVD4805N AEC-Q101 NTD4805N/D

    05ng

    Abstract: No abstract text available
    Text: 4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4805N NTD4805N/D 05ng

    Untitled

    Abstract: No abstract text available
    Text: 4805N, 4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − 4805N


    Original
    PDF NTD4805N, NVD4805N NTD4805N/D

    Untitled

    Abstract: No abstract text available
    Text: 4805N, 4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original
    PDF NTD4805N, NVD4805N NTD4805N/D

    05NG

    Abstract: 369D NTD4805N NTD4805NT4G 836 DIODE
    Text: 4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4805N NTD4805N/D 05NG 369D NTD4805N NTD4805NT4G 836 DIODE