1N3064
Abstract: 1N916 ACPL-4800 4800 8pin mosfet
Text: ACPL-4800 High CMR Intelligent Power Module and Gate Drive Interface Optocoupler Data Sheet Description Features The ACPL-4800 fast speed optocoupler contains a GaAsP LED and photo detector with built-in Schmitt trigger to provide logic-compatible waveforms,
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ACPL-4800
ACPL-4800
AV01-0193EN
1N3064
1N916
4800 8pin mosfet
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ACPL-4800
Abstract: 1N3064 1N916
Text: ACPL-4800 High CMR Intelligent Power Module and Gate Drive Interface Optocoupler Datasheet Description Features The ACPL-4800 fast speed optocoupler contains a GaAsP LED and photo detector with built-in Schmitt trigger to provide logic-compatible waveforms, eliminating the need for additional
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ACPL-4800
ACPL-4800
5989-4496EN
5989-4685EN
1N3064
1N916
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servo motors schematic
Abstract: ACPL-4800 ACPL-4800-000E "dc servo motor" dc servo igbt diagram mosfet 4800 dc ac inverter schematic igbt difference between IGBT and MOSFET IN inverter igbt ac motor speed control schematic diagram brushless motor control
Text: ACPL-4800 High CMR Intelligent Power Module and Gate Drive Interface Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ACPL-4800 fast speed optocoupler contains a GaAsP
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ACPL-4800
ACPL-4800
AV01-0193EN
servo motors schematic
ACPL-4800-000E
"dc servo motor"
dc servo igbt diagram
mosfet 4800
dc ac inverter schematic igbt
difference between IGBT and MOSFET IN inverter
igbt ac motor speed control
schematic diagram brushless motor control
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Lite-On Power Semiconductor
Abstract: heller
Text: For Immediate Release Joseph Liu Chief Financial Officer Associates Diodes Incorporated 805 446-4800 Philip Bourdillon Silverman Heller (310) 208-2550 DIODES INCORPORATED ANNOUNCES NEW BRAND IDENTITY — Company Will Market the "Vishay/Lite-On Power Semiconductor" Brand —
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1262-33
Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.
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5V-100V)
O-247
PLUS220
ISOPLUS220TM
PLUS220SMD
O-252
O-220
O-263
1262-33
IXTP44N10T
IXTH200N10T
ixtp76n075
IXTA60N10T
IXTQ130N10T
IXTP98N075T
IXTP130N10T
IXTP240N055T
IXTP64N055T
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
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ao4800
Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
Text: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck
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AO4800
AO4800
AO4800L
AO4800L
PD-00223
4800 so-8
aos Lot Code Week
4800 SO8
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mosfet 4800
Abstract: ,mosfet smd 4800 4800 power mosfet 4800 mosfet 2SJ606 ,Transistor smd 4800
Text: MOSFET SMD Type MOS Field Effect Transistor 2SJ606 TO-263 Unit: mm +0.1 1.27-0.1 Features MAX. VGS = -4.0 V, ID =-42 A Low Ciss: Ciss = 4800 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 RDS(on)2 = 23m +0.2 4.57-0.2 +0.2
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2SJ606
O-263
--42A
mosfet 4800
,mosfet smd 4800
4800 power mosfet
4800 mosfet
2SJ606
,Transistor smd 4800
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7F MARKING
Abstract: APM4800 J-STD-020A ANPEC
Text: APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 • 30V/8A , RDS ON =15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged S 1 8 D S 2 7 D S 3 6
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APM4800
7F MARKING
APM4800
J-STD-020A
ANPEC
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Untitled
Abstract: No abstract text available
Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS
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IRL6283MTRPbF
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI
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IRF6641TRPbF
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Untitled
Abstract: No abstract text available
Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS
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IRL6283MTRPbF
J-STD-020Dâ
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SJ 76 A DIODE EMI
Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI
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IRF6643TRPbF
SJ 76 A DIODE EMI
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IXFD14N80
Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
Text: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9
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IXFD76N07-12
XFD67N10
IXFD75N10
IXFD170N10
IXFD42N20
IXFD50N20
IXFD68N20
1XFD90N20Q
IXFD110N20
IXFD35N30
IXFD14N80
CMP 3.48
ixfh50n20
1XFH12N90
IXFN170N10
diode 348
IXFD76N07-12
IXFD21N50
IXFH21N50
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Untitled
Abstract: No abstract text available
Text: IRL6297SDPbF DirectFET Dual N-Channel Power MOSFET Typical values unless otherwise specified Applications l Charge and Discharge Switch for Battery Application l Isolation Switch for Input Power or Battery Application VDSS Environmentaly Friendly Product
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IRL6297SDPbF
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: IRF9383MPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
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IRF9383MPbF
315nC
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Untitled
Abstract: No abstract text available
Text: IRF9383MPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
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IRF9383MPbF
315nC
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Untitled
Abstract: No abstract text available
Text: IRF6712SPbF IRF6712STRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHS Compliant and Halogen Free VDSS l Low Profile (<0.7 mm) VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 25V max ±20V max 3.8m@ 10V 6.7m@ 4.5V
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IRF6712SPbF
IRF6712STRPbF
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IRF938
Abstract: 60v 10KHz ir MOSFET
Text: PD - 97708 IRF9383MPbF IRF9383MTRPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on)
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IRF9383MPbF
IRF9383MTRPbF
315nC
IRF938
60v 10KHz ir MOSFET
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Untitled
Abstract: No abstract text available
Text: IRF8304MPbF DirectFET Power MOSFET RoHS Compliant and Halogen Free Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V l Ultra Low Package Inductance
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IRF8304MPbF
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irf9395
Abstract: No abstract text available
Text: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application
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6332A
IRF9395MPbF
IRF9395MTRPbF
irf9395
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97708 IRF9383MPbF IRF9383MTRPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on)
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IRF9383MPbF
IRF9383MTRPbF
315nC
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Untitled
Abstract: No abstract text available
Text: IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits
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IRF9395MTRPbF
JESD47Fâ
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified
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IRL6283MTRPbF
J-STD-020Dâ
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