48-PIN TSOP STANDARD PRINT Search Results

29F800TA

Abstract: 29f800ba MBM29F800 29F800T
Contextual Info: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)

Contextual Info: FLASHMEMORY CMOS • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type

labtool 48

Abstract: labtool 148C ZIF 48-pin dil labtool 48 Programmer LABTOOL-48 LABTOOL-148C ZIF 48-pin 28f160b3b 148C labtool
Contextual Info: LabTool-148C Compact Programmer Features Printer-port interface with auto-switch power adapter Support 5V and 3.3V low voltage devices Fastest EPROM/ Flash programming speed on the market 48 pin DIL zero insertion force socket Auto-sense/ Self programming with statistical report

NEC A39A

Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Contextual Info: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES

Contextual Info: UG216C2474HK S G(T) 48M Bytes (16M x 24) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216C2474HK(S)G(T) is a 16,777,216 bits by 24 SIMM module. The UG216C2474HK(S)G(T) is assembled using 6 pcs of 16Mx4 4K refresh DRAM in 400mil SOJ/TSOP Package mounted on 72 Pin printed

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

UG16M83222KBT

Abstract: 2,2uF capacitor UG16M83222KB
Contextual Info: UG16M83222KB T G(T) 32M Bytes (8M x 32) DRAM 72Pin SIMM based on 4M X 4 General Description Features The UG16M83222KB(T)G(T) is a 8,388,608 bits by 32 SIMM module.The UG16M83222KB(T)G(T) is assembled using 16 pcs of 4Mx4 2K refresh DRAMs mounted on a 72-Pin printed circuit board.

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

land pattern for TSOP 2 86 PIN

Abstract: land pattern for TSOP 2 54 pin land pattern for TSOP 56 pin oki naming qfp 64 0.4 mm pitch land pattern TSOP 54 land pattern ic packages TSOP 66 pin Package thermal resistance SOJ 44 PCB land ED730
Contextual Info: This version: Apr. 2001 Previous version: Jun. 1997 PACKAGE INFORMATION 1. PACKAGE CLASSIFICATIONS This document is Chapter 1 of the package information document consisting of 8 chapters in total. PACKAGE INFORMATION 1. PACKAGE CLASSIFICATIONS 1. PACKAGE CLASSIFICATIONS

A20 marking

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32000A 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) Description The µPD23C32000A is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 4,194,304 words by 8 bits, WORD mode: 2,097,152 words by 16 bits).

m1142

Abstract: upd23c32000
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32000L 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) Description The µPD23C32000L is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32000L 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) Description The µPD23C32000L is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 4,194,304 words by 8 bits, WORD mode: 2,097,152 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32040L 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE /2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C32040L is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE

M1142

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32040L 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C32040L is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE

UPD23C8000XCZ

Abstract: UPD23C8000XCZ-XXX UPD23C8000X d23cxxxxx PD23C8000 UPD23C8000XGY-XXX-MKH UPD23C8000XGX-XXX UPD23C8000XGX UPD23C8000XG5XXX7JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000X 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000X is a 8, 388, 608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1, 048, 576 words by 8 bits, WORD mode: 524, 288 words by 16 bits).

d23cxxxxx

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000LX 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1,048,576 words by 8 bits, WORD mode: 524,288 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16000W 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The µPD23C16000W is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 2,097,152 words by 8 bits, WORD mode: 1,048,576 words by 16 bits).

14C88

Abstract: 14CA8 sonos 22C48 Plastic 28-pin 300 mil SOIC SIMTEK 16C88 11C68 12c68 130nm CMOS SONOS flash memory
Contextual Info: COMPANY OVERVIEW nvSRAM Features • Unlimited Writes and Reads Simtek Corporation NASDAQ : SMTK , headquartered in Colorado Springs, Colorado, delivers unique integrated NV + SRAM memory products that solve the tough write endurance problems in a variety of applications. Our customers

LGA 1156 PIN OUT diagram

Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Contextual Info: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)

Contextual Info: Special Application Dip Adpaters for Flash, EPROMs, Static RAMs, DRAMs and Pals with Pin Correction ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek family of DIP Adapter Modules is designed to convert integrated circuits in SOJ, PLCC, TSOP and SOIC package to a top

HN58V1001TI-25E

Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
Contextual Info: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,

Contextual Info: Special Application Dip Adpaters for Flash, EPROMs, Static RAMs, DRAMs and Pals with Pin Correction ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek family of DIP Adapter Modules is designed to convert integrated circuits in SOJ, PLCC, TSOP and SOIC package to a top