48 08NG Search Results

48 08NG Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UC3708NG4		Texas Instruments	Non-Inverting High Speed Power Drivers 8-PDIP 0 to 70

48 08NG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
48 08NG Abstract: 369D 4808ng 08NG NTD4808N Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4808N NTD4808N/D 48 08NG 369D 4808ng 08NG NTD4808N
48 08NG Abstract: 369D NTD4808N NTD4808N35G TR 069 Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808N35G TR 069
48 08NG Abstract: 4808ng 369D NTD4808N 08NG Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4808N NTD4808N/D 48 08NG 4808ng 369D NTD4808N 08NG
08NG Abstract: No abstract text available Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4808N NTD4808N/D 08NG
48 08NG Abstract: 369D NTD4808N NTD4808NT4G 08ng Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808NT4G 08ng
4808ng Abstract: 08NG Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4808N NTD4808N/D 4808ng 08NG
Untitled Abstract: No abstract text available Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring	Original	PDF	NTD4808N, NVD4808N NTD4808N/D
NVD4808N Abstract: No abstract text available Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring	Original	PDF	NTD4808N, NVD4808N AEC-Q101 NTD4808N/D
Untitled Abstract: No abstract text available Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring	Original	PDF	NTD4808N, NVD4808N NTD4808N/D