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    47N60C3 Search Results

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    47N60C3 Price and Stock

    Infineon Technologies AG SPW47N60C3FKSA1

    MOSFET N-CH 650V 47A TO247-3
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    DigiKey SPW47N60C3FKSA1 Tube 643 1
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    Avnet Americas SPW47N60C3FKSA1 Bulk 16 Weeks, 4 Days 1
    • 1 $16.36
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    • 100 $10.29
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    SPW47N60C3FKSA1 Tube 15 Weeks 30
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    Newark SPW47N60C3FKSA1 Bulk 5,725 1
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    Chip1Stop SPW47N60C3FKSA1 Tube 98
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    EBV Elektronik SPW47N60C3FKSA1 74,640 16 Weeks 240
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    New Advantage Corporation SPW47N60C3FKSA1 59,520 1
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    Win Source Electronics SPW47N60C3FKSA1 49,999
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    Infineon Technologies AG SPW47N60C3

    MOSFETs N-Ch 650V 47A TO247-3 CoolMOS C3
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    Mouser Electronics SPW47N60C3 1,424
    • 1 $13.18
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    • 100 $6.88
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    Bristol Electronics SPW47N60C3 525
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    TME SPW47N60C3 104 1
    • 1 $16.36
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    ComSIT USA SPW47N60C3 270
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    Win Source Electronics SPW47N60C3 50,000
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    Infineon Technologies AG SPW47N60C3FKSA1.

    N Channel Mosfet, 650V, 47A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:47A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon SPW47N60C3FKSA1.
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    Newark SPW47N60C3FKSA1. Bulk 30
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    Infineon Technologies AG 47N60C3

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    Bristol Electronics 47N60C3 160
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    Infineon Technologies AG SPW47N60C3X

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    Bristol Electronics SPW47N60C3X 160
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    47N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    47N60C3

    Abstract: IXKH47N60C3 smps high power ID100 065B1 47n60
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKH 47N60C3 VDSS = 600 V ID25 = 47 A Ω RDS on = 70 mΩ Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C


    Original     		PDF 47N60C3 ID100 O-247 728B1 065B1 123B1 47N60C3 IXKH47N60C3 smps high power ID100 065B1 47n60

    SPW47N60C3

    Abstract: 47n60c3
    Text: 47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 SPW47N60C3 47n60c3

    47n60c3

    Abstract: SPW47N60C3 SDP06S60 617 300
    Text: 47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 SDP06S60 617 300

    47n60C3

    Abstract: 47N60C SPW47N60C3 SDP06S60
    Text: 47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 47N60C SPW47N60C3 SDP06S60

    47n60C3

    Abstract: SPW47N60C3 47N60 SDP06S60
    Text: 47N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 SPW47N60C3 47N60 SDP06S60

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10
    Text: 47N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A •=Ultra low effective capacitances


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 47N60C
    Text: 47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 47N60C

    47n60c3

    Abstract: 47n60 Q67040-S4491 47N60C 47n60c3 infineon
    Text: 47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 47n60 Q67040-S4491 47N60C 47n60c3 infineon

    47n60c3

    Abstract: P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449
    Text: 47N60C3 Target data sheet Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.07 Ω


    Original     		PDF SPW47N60C3 P-TO247 47N60C3 47n60c3 P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449