z670
Abstract: TF70 WCMS0808C1X 11522-5
Text: S0808C1X WCMS0808C1X 32Kx8 Static RAM Features • Low Voltage Range — 4.5V–5.5V Operation • Low active power — 275 mW max. • Low standby power — 28 µW (max.) • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs
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S0808C1X
WCMS0808C1X
32Kx8
WCMS0808C1X
450-mil-wide
300-mil
28-Lead
z670
TF70
11522-5
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WCMA4008C1X
Abstract: WCMA4008C1X-GF70
Text: WCMA4008C1X 512K x 8 Static RAM Features • Voltage Range — 4.5V–5.5V • Low active power — Typical active current: 2.5 mA @ f = 1 MHz • • • • • — Typical active current: 12.5 mA @ f = fmax Low standby current Automatic power-down when deselected
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WCMA4008C1X
WCMA4008C1X
WCMA4008C1X-GF70
32-Lead
450-Mil)
WCMA4008C1X-GF70
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WCMS0808U1X
Abstract: WCMS0808U1X-TF70
Text: S0808U1X WCMS0808U1X 32K x 8 Static RAM Features • Low voltage range: — 2.7V − 3.6V • Low active power and standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected
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S0808U1X
WCMS0808U1X
WCMS0808U1X
450-mil-wide
300-mil
-NF70
28-Lead
WCMS0808U1X-TF70
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CY62148BLL-70SC
Abstract: CY62148B CY62148BLL CY62148BLL-70SI CY62148BLL-70ZC CY62148BLL-70ZRC
Text: CY62148B MoBL 4-Mbit 512K x 8 Static RAM Features is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 99% when deselected.
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CY62148B
32-lead
450-mil)
32-lead
55-ns
CY62148BLL-70SC
CY62148BLL
CY62148BLL-70SI
CY62148BLL-70ZC
CY62148BLL-70ZRC
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CY62128BLL-55SI
Abstract: CY62128B CY62128BLL-70SI
Text: CY62128B MoBL 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 ,
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
CY62128BLL-55SI
CY62128BLL-70SI
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CY62148
Abstract: CY62148-70SI CY62148L-70SI
Text: fax id: 1079 1CY 621 48 CY62148 PRELIMINARY 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max.
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CY62148
CY62148
32-Lead
450-Mil)
CY62148L
CY62148-70SI
CY62148L-70SI
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CY62128VL-70ZI
Abstract: CY62128V CY62128V18 CY62128V25 ZA32
Text: amily CY62128V Family 128K x 8 Static RAM Features LOW Output Enable OE and three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide
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CY62128V
450-mil-wide
32-lead
CY62128V)
CY62128V25)
CY62128V18)
CY62128VL-70ZI
CY62128V18
CY62128V25
ZA32
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CY62256VLL-70ZI
Abstract: CY62256V CY62256VLL CY62256VLL-70SNC CY62256VLL-70ZC
Text: CY62256V 32K x 8 Static RAM Features feature, reducing the power consumption by over 99% when deselected. The CY62256V family is available in the standard 450-mil-wide 300-mil body width SOIC, TSOP, and reverse TSOP packages. • Low voltage range: — CY62256V (2.7V–3.6V)
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CY62256V
CY62256V
450-mil-wide
300-mil
CY62256VLL-70ZI
CY62256VLL
CY62256VLL-70SNC
CY62256VLL-70ZC
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CY62256V
Abstract: CY62256V25LL CY62256VLL CY62256VLL-70SNC CY62256VLL-70SNXC
Text: CY62256V 256K 32K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62256V family is composed of two high-performance CMOS static RAM’s organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable
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CY62256V
CY62256V
CY62256V25LL
CY62256VLL
CY62256VLL-70SNC
CY62256VLL-70SNXC
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5525L
Abstract: CY62256 CY62256L CY62256LL
Text: 56 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and
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CY62256
32Kx8
CY62256
450-mil-wide
300-mil
600-mil
5525L
CY62256L
CY62256LL
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62128-1
Abstract: RAM 62128 525-mil-wide CY62128 CY62128V
Text: fax id: 1078 1CY 621 28 V CY62128V ADVANCED INFORMATION 128K x 8 Static RAM feature that reduces power consumption by more than 75% when deselected. Features • 2.7V - 3.6V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version
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CY62128V
144mW
CY62128
62128-1
RAM 62128
525-mil-wide
CY62128V
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CY62256VLL
Abstract: CY62256VLL-70SNC CY62256VLL-70ZC CY62256VLL-70ZI CY62256V
Text: 56V CY62256V 32K x 8 Static RAM Features ers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62256V family is available in the standard 450-mil-wide 300-mil body width SOIC, TSOP, and reverse
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CY62256V
CY62256V
450-mil-wide
300-mil
CY62256V25
CY62256VLL
CY62256VLL-70SNC
CY62256VLL-70ZC
CY62256VLL-70ZI
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7C15121
Abstract: CY7C1512-25SC CY7C1512 CY7C1512-15SC CY7C1512-15ZC CY7C1512-20SC CY7C1512-20ZI
Text: 1CY 7C15 12 PRELIMINARY CY7C1512 64K x 8 Static RAM Features • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power — 770 mW • Low standby power — 28 mW • Automatic power-down when deselected • TTL-compatible inputs and outputs
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CY7C1512
CY7C1512
7C15121
CY7C1512-25SC
CY7C1512-15SC
CY7C1512-15ZC
CY7C1512-20SC
CY7C1512-20ZI
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TIS43
Abstract: Ck42 32vx10 20RA10 PLC42VA12 PLC42VA12A PLC42VA12FA PLC42VA12N
Text: Philips Semiconductors Programmable Logic Devices Product specification CMOS programmable multi-function PLD 42 x 105 × 12 DESCRIPTION FEATURES The new PLC42VA12 CMOS PLD from Philips Semiconductors exhibits a unique combination of the two architectural concepts
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PLC42VA12
PLC42VA12
CONFIGURATIA12
DIN42
NIN42
NTIM42
DTIM42
JKFFPR42
EXOR42
TNOO42
TIS43
Ck42
32vx10
20RA10
PLC42VA12A
PLC42VA12FA
PLC42VA12N
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CY62256V
Abstract: CY62256V25LL CY62256VLL CY62256VLL-70SNC
Text: CY62256V 256K 32K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62256V family is composed of two high-performance CMOS static RAM’s organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable
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CY62256V
CY62256V
CY62256V25
CY62256V25LL
CY62256VLL
CY62256VLL-70SNC
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CY62256
Abstract: CY62256L CY62256LL
Text: fax id: 1068 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and
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CY62256
32Kx8
CY62256
450-mil-wide
300-mil
600-mil
CY62256L
CY62256LL
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CY62128VLL-55ZAI
Abstract: CY62128V CY62128VLL-55SC CY62128VLL-55ZI CY62128VLL-70SC
Text: 28V CY62128V 128K x 8 Static RAM Features automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V is available in the standard 450-mil-wide SOIC, 32-lead TSOP-I, 32-lead Reverse TSOP-1, and STSOP packages. • High Speed
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CY62128V
CY62128V
450-mil-wide
32-lead
CY62128VLL-55ZAI
CY62128VLL-55SC
CY62128VLL-55ZI
CY62128VLL-70SC
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A5 GNC
Abstract: 62128b-55 CY62128BLL CY62128B CY62128BLL-55SC CY62128BLL-55SI CY62128BLL-55ZI 62128B-70 62128b70
Text: CY62128B MoBL 128K x 8 Static RAM Features automatic power-down feature that reduces consumption by more than 75% when deselected. • 4.5V – 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)
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CY62128B
CY62128B
CY62128BLL-55ZC,
CY62128BLL-55ZAC,
CY62128BLL-55ZRC,
CY62128BLL-70ZAC,
CY62128BLL-70ZRI,
CY62128BLL-70ZRC
A5 GNC
62128b-55
CY62128BLL
CY62128BLL-55SC
CY62128BLL-55SI
CY62128BLL-55ZI
62128B-70
62128b70
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Untitled
Abstract: No abstract text available
Text: fax id: 1079 CY62148 PRELIMINARY W / C Y P R E S S _ 512Kx 8 Static RAM Features an automatic power-down feature that reduces power con sumption by more than 99% when deselected. • 4 .5V -5.5V operation • CMOS for optimum speed/power • Low active power
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CY62148
512Kx
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Untitled
Abstract: No abstract text available
Text: C Y7C 1512 64K x 8 Static RAM and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. Features • High speed — tAA = 1 5 ns • CMOS for optimum speed/power • Low active power
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CY7C1512
32-Lead
32-Lead
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32 pin soic 450mil
Abstract: CY62128LL-70SI SOIC 32
Text: fax id: 1079 W / CYPRESS PRELIMINARY_ CY62148 512 K x 8 Static RAM an automatic power-down feature that reduces power con sumption by more than 99% when deselected. Features • 4.5V-5.5V operation • CMOS for optimum speed/power • Low active power
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CY62148
32 pin soic 450mil
CY62128LL-70SI
SOIC 32
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450ME
Abstract: 6CA7
Text: CY62256 PRELIMINARY 32K x 8 Static RAM Features Functional Description • 55, 70 ns access time • CMOS for optimum speed/power • Low active power 70 ns, LL version — 275 mW (max.) • Low standby power (70 ns, LL version) — 28 nW (max.) • Easy memory expansion with CE and
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CY62256
CY62256
450-mil-wide
300-mil
450ME
6CA7
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CY62256L-70SNI
Abstract: No abstract text available
Text: gyp : CY62256 C'i- 32Kx8StaticRAM output enable UE and three-state drivers. This device has an automatic power-down feature, reducing the power consump tion by 99.9% when deselected. The CY62256 is in the stan dard 450-mil-wide (300-mil body width) SOIC, TSOP, and
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CY62256
CY62256
450-mil-wide
300-mil
600-mil
CY62256L-70SNI
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C1512 64K x 8 Static RAM Features and three-state drivers. This device has an automatic pow er-down feature that reduces power consumption by more than 75% when deselected. • High speed — tAA = 15ns Writing to the device is accomplished by taking chip enable
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CY7C1512
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