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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HI TACHI / OPTOELECTRONI CS IñE D • 44Tb2GS HL1221C GOlOñil 2 ■ InG aA sP LD T - Li l ' ~ O S ' Description F 'M '- f r f HL1221C is a 1.2 //m InGaAsP laser diode with double heterojunction structure. It is suitable as a light source in fiberoptic com	OCR Scan	PDF	44Tb2GS HL1221C HL1221C
HL1221C Abstract: Hitachi Scans-001 Text: HI TACHI / OPTOELECTRONI CS IñE D • 44Tb2GS HL1221C GOlOñil 2 ■ InG aA sP LD T - Lil'~ O S' Description Z7 HL1221C is a 1.2 //m InGaAsP laser diode with double heterojunction structure. It is suitable as a light source in fiberoptic com m unications and various other types of optical	OCR Scan	PDF	HL1221C 44Tb2GS HL1221C Hitachi Scans-001
2SK553 Abstract: DIODE T25 4 Jo 2SK552 J5111 H12B Hitachi Scans-001 Text: 2SK552,2SK553— blE D • 44^505 DG13DÖ3 TTfl iH i m HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • L ow O n -R e s is ta n c e . • H ig h S p e e d S w itc h in g . • L o w D riv e C u r r e n t. •	OCR Scan	PDF	44TtjSQS DG13DÃ 2SK552 2SK553 O-220AB) 0D130Ã 2SK552, 2SK553 441b2QS DIODE T25 4 Jo J5111 H12B Hitachi Scans-001
Untitled Abstract: No abstract text available Text: ‘tM'K.gOS 0013533 Tfi? » H i m 2SK1764 HITACHI/ OPTOELECTRONICS Silicon N Channel MOS FET Application blE I UPAK Low frequency amplifier High speed switching Features • Low on-resistance • High speed switching • Suitable for switchingregulator, DC-DC	OCR Scan	PDF	2SK1764 QD13537 DD1353fl
HL1323 Abstract: No abstract text available Text: HL1323DM InGaAsP LD Description The HL1323DM is a 1.3 pm band InGaAsP laser diode with a double heterostructure. It is suitable as a light source for optical fiber communication systems, such as LAN, CATV, and LJN. Features Fiber Specifications • Long wavelength output: Ap = 1260 to 1340 nm	OCR Scan	PDF	HL1323DM HL1323DM 44Tb2GS HL1323
Untitled Abstract: No abstract text available Text: HITACHI/COPTOELECTRONICS S l4E D • G012D32 HL7832G/HG bMT « H i m G aAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play	OCR Scan	PDF	G012D32 HL7832G/HG HL7832G/HG HL7832HG) 001203b HL7832G) T-41-05
2SK641 Abstract: 2SK642 Text: blE T> m 4 4 ^ 2 0 5 ÜD13114 4T1 2SK641, 2SK642- IHIT4 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator and	OCR Scan	PDF	D13114 2SK641, 2SK642SILICON 2SK641 2SK642 001311b 44Tb2GS -2SK641, 2SK642
Untitled Abstract: No abstract text available Text: HE8403SG/ML GaAIAs IRED Description The HE8403SG/ML are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance	OCR Scan	PDF	HE8403SG/ML HE8403SG/ML HE8403SG: HE8403ML: HE8403ML)
Untitled Abstract: No abstract text available Text: HL1521 A/AC InGaAsP LD Description The HL1521A/AC are 1.55 nm band laser diodes with a double heterostructure. Features Long wavelength output: = 1530 to 1570 nm 5 mW CW operation at room temperature Fast pulse response: tp tf < 0.5 ns Package Type • HL1521 A: A1	OCR Scan	PDF	HL1521 HL1521A/AC HL1521AC: cJb20S D0143flh
2SK1205 Abstract: No abstract text available Text: MM1b205 GQ13253 022 • H I T M 2 S K 1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. Gate 2. Drain F lan g e 3. Source (D im ensions i ■ FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown	OCR Scan	PDF	2SK1205 MM1b205 GQ13253 2SK1205