Untitled
Abstract: No abstract text available
Text: Red Enhanced High Performance Silicon Photodiode SD 445-14-21-305 .084 [2.13] .076 [1.93] PACKAGEDIMENSIONS DIMENSIONS INCH PACKAGE INCH[mm] [mm] ±.005 [0.13] .053 [1.35] ANODE INDEX 2X Ø.018 [0.46] ANODE .657 [16.69] ±.010 [0.25] .492 [12.50] 120° VIEWING
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445142
Abstract: No abstract text available
Text: Ultra Low Noise Ultra-Low Noise PIN Photodiodes Specifications Responsivity: Series Resistance: 0.50 A/W minimum, 0.55 A/W typical @ 900nm 100Ω maximum measured by applying +10mA to photodiode and measuring voltage across anode and cathode Part Number
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900nm
950nm.
830nm
445142
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111 305
Abstract: T-23
Text: ULTRA LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area mm2 SD 057-14-21-011 1.67 Active Area (in) 0.051 x Shunt Resistance1 Dark Current1 at 5V Breakdown
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900nm
0x10-14
4x10-14
8x10-14
111 305
T-23
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area mm2 SD 057-14-21-011 1.67 Active Area (in) 0.051 x Shunt Resistance1 Dark Current1 at 5V Breakdown
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900nm
0x10-14
4x10-14
8x10-14
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44514213
Abstract: No abstract text available
Text: Red Enhanced High Performance Silicon Photodiode SD 445-14-21-305 PACKAGE DIMENSIONS INCH [mm] .084 [2.13] .076 [1.93] PACKAGE DIMENSIONS INCH [mm] ±.005 [0.13] .053 [1.35] ANODE INDEX 2X Ø.018 [0.46] ANODE .657 [16.69] ±.010 [0.25] .492 [12.50] 120° VIEWING
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Untitled
Abstract: No abstract text available
Text: A dvanced P H o r o ik , I n c . ULTRA-LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: 0.32 A/W minimum, 0.36 A/W typical @ 632.8nm; 0.50 A/W minimum, 0.55 A/W typical @ 900nm Series Resistance: 100£2maximum measured by applying +10mA to photodiode and measuring voltage
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900nm
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