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    diode t25 4 HO

    Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
    Text: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.


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    PDF 441bEG5 2SK310 diode t25 4 HO diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001

    PF0010

    Abstract: No abstract text available
    Text: blE D • 44^205 G0135T5 224 « H I T M HITACHI/ OPTO ELECTRON ICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 820-850 MHz ■ FEATURES • Include Input and Output Matching Circuit • Easy to Control Output Power • Superior to Stability at Load Mismatching


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    PDF D13STS PF0010 PF0010

    Untitled

    Abstract: No abstract text available
    Text: blE D • 44^205 G0135T5 224 « H I T M HITACHI/ OPTO ELECTRON ICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 820-850 MHz ■ FEATURES • Include Input and Output Matching Circuit • • Easy to Control Output Power Superior to Stability at Load Mismatching


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    PDF G0135T5 441b2G5 PF0010