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    4418 MOSFET Search Results

    4418 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4418 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 4418

    Abstract: murata date code D2812C MIPF2016 D3010F
    Text: 19-4418; Rev 1; 1/10 KIT ATION EVALU E L B A AVAIL 700mA DC-DC Step-Down Converters with Dual 300mA LDO in 2mm x 2mm CSP Features The MAX8884Y/MAX8884Z step-down converters with dual low-dropout LDO linear regulators are intended to power low-voltage microprocessors, DSPs, camera and


    Original     		PDF 700mA 300mA MAX8884Y/MAX8884Z 700mA. MAX8884Y/MAX8884Z MOSFET 4418 murata date code D2812C MIPF2016 D3010F

    MOSFET 4418

    Abstract: MIPF2016 KSLI-252010 CB2518T maxim dual buck dual ldo
    Text: 19-4418; Rev 0; 4/09 700mA DC-DC Step-Down Converters with Dual 300mA LDO in 2mm x 2mm CSP Features The MAX8884Y/MAX8884Z step-down converters with dual low-dropout LDO linear regulators are intended to power low-voltage microprocessors, DSPs, camera and


    Original     		PDF 700mA 300mA MAX8884Y/MAX8884Z 700mA. R162A2 MAX8884Y/MAX8884Z MOSFET 4418 MIPF2016 KSLI-252010 CB2518T maxim dual buck dual ldo

    MOSFET 4418

    Abstract: 4418 PKB 4418 PINBLA
    Text: PKB 4418 PINB DC/DC Converter 48V Input, 1.8V at 25A Output Features • High Efficiency; 88.5% Typ. at 25A 91% at 12.5A • 1/8th brick pkg: low profile 58 x 19 mm2 2.28 x 0.75 in2 • Pin compatible replacement for Industrystandard quarter brick • 2,250 V dc isolation and meets Isolation


    Original     		PDF

    D2812C

    Abstract: MOSFET 4418 maxim dual buck dual ldo LQH32C53
    Text: 19-4418; Rev 1; 1/10 700mA DC-DC Step-Down Converters with Dual 300mA LDO in 2mm x 2mm CSP Features The MAX8884Y/MAX8884Z step-down converters with dual low-dropout LDO linear regulators are intended to power low-voltage microprocessors, DSPs, camera and


    Original     		PDF 700mA 300mA MAX8884Y/MAX8884Z 700mA. MAX8884Y/MAX8884Z D2812C MOSFET 4418 maxim dual buck dual ldo LQH32C53

    Untitled

    Abstract: No abstract text available
    Text: 19-4418; Rev 1; 1/10 KIT ATION EVALU E L B A AVAIL 700mA DC-DC Step-Down Converters with Dual 300mA LDO in 2mm x 2mm CSP Features The MAX8884Y/MAX8884Z step-down converters with dual low-dropout LDO linear regulators are intended to power low-voltage microprocessors, DSPs, camera and


    Original     		PDF 700mA 300mA MAX8884Y/MAX8884Z 700mA. MAX8884Y/MAX8884Z

    Untitled

    Abstract: No abstract text available
    Text: PKB 4000 Series 36-75 Vdc DC/DC converter Output up to 30 A/90 W Contents Product Program. . . . . . . . . . . . . . . . . . . . . . 2 Mechanical Information. . . . . . . . . . . . . . . . . 3 Absolute Maximum Ratings . . . . . . . . . . . . . 4 Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


    Original     		PDF

    ba 4913

    Abstract: PKB 4713 PINB PKB 4619 PINB PKB 4711 PINB ac power converter mtbf MOSFET 4418 PKB 4418 PINBLA IEC61204 R10A
    Text: PKB 4000 Series 36-75 Vdc DC/DC converter Output up to 30 A/90 W Contents Product Program. . . . . . . . . . . . . . . . . . . . . . 2 Mechanical Information. . . . . . . . . . . . . . . . . 3 Absolute Maximum Ratings . . . . . . . . . . . . . 4 Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PKB 4000 Series 36-75 Vdc DC/DC converter Output up to 30 A/82.5 W Contents Product Program . . . . . . . . . . . . . . . . . . . . . . 2 Connections . . . . . . . . . . . . . . . . . . . . . . . . . 2 Mechanical Data . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PKB 4000 Series 36-75 Vdc DC/DC converter Output up to 30 A/90 W Contents Product Program . . . . . . . . . . . . . . . . . . . . . . 2 Mechanical Information . . . . . . . . . . . . . . . . . 3 Absolute Maximum Ratings . . . . . . . . . . . . . 4 Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


    Original     		PDF

    f14n05

    Abstract: AN9321 AN9322 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 TB334 mosfet 4413
    Text: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09770. Ordering Information PACKAGE 2268.5 Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFD14N05, RFD14N05SM, RFP14N05 TA09770. f14n05 AN9321 AN9322 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 TB334 mosfet 4413

    BD 4913

    Abstract: betty ic PKB 4318 PIOBNB TB 1225 EN
    Text: Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EZHIXZH SEC/S Kevin Zhou Approved PKB 4000 SEC/S SEC/D Kevin (Julia series You) Zhou 1 (2) (3) No. 1/1301-BMR 00152-EN/LZT146394 636Technical Uen Specification


    Original     		PDF 1/1301-BMR 00152-EN/LZT146394 636Technical 22-A114 22-A115 J-STD-020C MIL-STD-202G BD 4913 betty ic PKB 4318 PIOBNB TB 1225 EN

    BD 4913

    Abstract: PKB 4713 PINBLA
    Text: Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EZHIXZH SEC/S Kevin Zhou Approved PKB 4000 SEC/S SEC/D Kevin (Julia series You) Zhou 1 (2) (3) No. 1/1301-BMR 00152-EN/LZT146394 636Technical Uen Specification


    Original     		PDF 1/1301-BMR 00152-EN/LZT146394 636Technical 22-A114 22-A115 J-STD-020C MIL-STD-202G BD 4913 PKB 4713 PINBLA

    BD 4913

    Abstract: PKB 4610 PINBLb PKB 4318 PIOBNB MOSFET 4418 betty ic PKB 4713 PINBLA PKB 4713 PINB PKB 4610 PINB PKB 4418 PINB PKB 4318N PINB
    Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other 1/1301-BMR 001 52- EN/LZT 636146 Uen394 UenSpecification Technical EZHIXZH Approved PKB 4000 SEC/D (Julia (Bettyseries You) Wu) 1 (4) (2) No. Checked


    Original     		PDF 1/1301-BMR 22-A114 22-A115 J-STD-020C MIL-STD-202G BD 4913 PKB 4610 PINBLb PKB 4318 PIOBNB MOSFET 4418 betty ic PKB 4713 PINBLA PKB 4713 PINB PKB 4610 PINB PKB 4418 PINB PKB 4318N PINB

    BD 4913

    Abstract: MOSFET 4418 PKB 4711 PINBLA PKB 4318 PIOBNB PKB4610PINB JESD A114 PKB 4619 PINB PKB4000
    Text: Ericsson Internal PRODUCT SPECIFICATION E Prepared also subject responsible if other EZHIXZH Approved PKB 4000 SEC/D (Julia series You) 1 (3) No. 1/1301-BMR 636Technical Uen Specification Checked Date MICJOHN 2008-4-10 DC/DC converters, Input 36-75 V, Output 30 A/90 W


    Original     		PDF 1/1301-BMR 636Technical BD 4913 MOSFET 4418 PKB 4711 PINBLA PKB 4318 PIOBNB PKB4610PINB JESD A114 PKB 4619 PINB PKB4000

    Untitled

    Abstract: No abstract text available
    Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other 1/1301-BMR 001 52- EN/LZT 636146 Uen394 UenSpecification Technical EZHIXZH Approved PKB 4000 SEC/D (Julia (Bettyseries You) Wu) 1 (4) (2) No. Checked


    Original     		PDF 1/1301-BMR

    MOSFET 4418

    Abstract: PKB 4418 PINBLA
    Text: PKB 4000 Series DC/DC converter Input 36-75 Vdc Output up to 25A/62.5W Key Features • Industry standard Eighth-brick 58x19.94x7.62 mm 2.28x0.785x0.30 in • Low profile, max 7.62 mm (0.30 in) • High efficiency, typ. 87.6 % at 2.5 Vout 25 A load. • 2250 VDC input to output isolation,


    Original     		PDF 5A/62 58x19 785x0 SE-141 MOSFET 4418 PKB 4418 PINBLA

    BD 4913

    Abstract: PKB 4711 PINBLA PKB 4713 PINB MOSFET 4418 PKB 4713 PINBLA
    Text: Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EZHIXZH SEC/S Kevin Zhou Approved PKB 4000 SEC/S SEC/D Kevin (Julia series You) Zhou 1 (1) (3) No. 1/1301-BMR 00152-EN/LZT146394 636Technical Uen Specification


    Original     		PDF 1/1301-BMR 00152-EN/LZT146394 636Technical 22-A114 22-A115 J-STD-020C MIL-STD-202G BD 4913 PKB 4711 PINBLA PKB 4713 PINB MOSFET 4418 PKB 4713 PINBLA

    4318H

    Abstract: MOSFET 4418 4418G
    Text: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other (MICPJWI) MICPJWI Approved PKU 4000 PI seriesAnderzén] MPM/BK [Margaretha 1 (1) (3) No. Checked 001 1/1301-BMR 52-EN/LZT 602146 Uen 308 Uen Specification


    Original     		PDF 1/1301-BMR 52-EN/LZT MIL-STD-202G 4318H MOSFET 4418 4418G

    ATTP1

    Abstract: No abstract text available
    Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other EZIWSON Approved PKU 4000 Direct Converters SEC/D (Julia series You) 1 (1) (4) No. Checked Input 36-75 V, Output up to 25 A / 50 W 1/1301-BMR 001 52-EN/LZT


    Original     		PDF 1/1301-BMR 52-EN/LZT ATTP1

    Untitled

    Abstract: No abstract text available
    Text: RFD14N05, RFD14N05SM, RFP14N05 Semiconductor Data Sheet July 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFETs File Number 2268.5 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFD14N05, RFD14N05SM, RFP14N05 TA09770. 1e-30 73e-4 12e-6) 53e-5) 05e-3 35e-5)

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    FD-321

    Abstract: No abstract text available
    Text: • 43D2271 005*4125 fili ■ OR HARRIS HAS IR FD 320/321/322/323 IRFD320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package 4 - P IN D IP 0.5A and Q.4A, 350V - 400V T O P VIE W • rDS on = 1-8H and 2 .5 fl


    OCR Scan     		PDF 43D2271 IRFD320R/321R /322R /323R IRFD320, 1RFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, FD-321

    fd320

    Abstract: No abstract text available
    Text: 2 HARRIS IRFD320/321/322/323 IRFD320R/321R/322R/323R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package 4-P IN DIP • 0.5A and 0.4A, 350V - 400V TOP VIEW • rDS(on = 1-8n and 2 .5 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD320/321/322/323 IRFD320R/321R/322R/323R IRFD320, IRFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, IRFD322R, IRFD323R fd320

    MOSFET 4418

    Abstract: low voltage power transistor 33n 10e 33n10e mosfet 4419 4418 mosfet S 170 MOSFET TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS RDS on - 0.06 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF 0E-05 0E-04 0E-03 0E-02 0E-01 35Cms MOSFET 4418 low voltage power transistor 33n 10e 33n10e mosfet 4419 4418 mosfet S 170 MOSFET TRANSISTOR