43a 504 pcb mounted
Abstract: 43a 504 m 60 n 03 g10 AN-994
Text: IRF2807S/IRF2807L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
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IRF2807S/IRF2807L
43a 504 pcb mounted
43a 504
m 60 n 03 g10
AN-994
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AN-994
Abstract: IRL3705Z IRL3705ZL IRL3705ZS
Text: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET
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IRL3705ZPbF
IRL3705ZSPbF
IRL3705ZLPbF
O-220AB
AN-994.
AN-994
IRL3705Z
IRL3705ZL
IRL3705ZS
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marking code 43a
Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
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91372B
IRF1010NS/L
IRF1010NS)
IRF1010NL)
packag10)
marking code 43a
43A MARKING CODE
IRF1010NS
AN-994
IRF1010N
IRF1010NL
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AN-994
Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
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91372B
IRF1010NS/L
IRF1010NS)
IRF1010NL)
AN-994
IRF1010N
IRF1010NL
IRF1010NS
to262 pcb footprint
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AN-994
Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ
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IRF1010NSPbF
IRF1010NLPbF
EIA-418.
AN-994
IRF1010N
IRF1010NL
IRL3103L
43a 504 pcb mounted
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Untitled
Abstract: No abstract text available
Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ
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IRF2807SPbF
IRF2807LPbF
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!
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IRF1010NSPbF
IRF1010NLPbF
EIA-418.
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60V Single N-Channel HEXFET Power MOSFET in a HEX
Abstract: AN-994 IRF2807L irf2807s
Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ
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IRF2807SPbF
IRF2807LPbF
EIA-418.
60V Single N-Channel HEXFET Power MOSFET in a HEX
AN-994
IRF2807L
irf2807s
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43a 504
Abstract: marking code 43a AN-994 IRF2807L
Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ
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IRF2807SPbF
IRF2807LPbF
EIA-418.
43a 504
marking code 43a
AN-994
IRF2807L
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marking code 43a
Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ
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IRF1010NSPbF
IRF1010NLPbF
EIA-418.
marking code 43a
43A MARKING CODE
AN-994
IRF1010N
IRF1010NL
IRL3103L
43a 504
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AN-994
Abstract: IRF2807L IRF2807S
Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International
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IRF2807S
IRF2807L
AN-994
IRF2807L
IRF2807S
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Untitled
Abstract: No abstract text available
Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International
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IRF2807S
IRF2807L
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mosfet k 61 y1
Abstract: IRF2807 AN-994 IRF2807L IRF2807S
Text: PD - 91518A IRF2807S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF2807S Low-profile through-hole (IRF2807L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS(on) = 0.013Ω G ID = 82A
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1518A
IRF2807S/L
IRF2807S)
IRF2807L)
mosfet k 61 y1
IRF2807
AN-994
IRF2807L
IRF2807S
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marking 43a
Abstract: AN-994 IRF2807L IRF2807S
Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International
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IRF2807S
IRF2807L
marking 43a
AN-994
IRF2807L
IRF2807S
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DIODE FS 601
Abstract: irf 48v mosfet
Text: PD - 96099 IRFZ48SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.018Ω G ID = 50A Description S Third Generation HEXFETs from International Rectifier
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IRFZ48SPbF
EIA-418.
DIODE FS 601
irf 48v mosfet
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irl3705zpbf
Abstract: IRL3705ZSPBF AN-1005 IRF1010
Text: PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D
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5579A
IRL3705ZPbF
IRL3705ZSPbF
IRL3705ZLPbF
O-220AB
AN-994.
irl3705zpbf
IRL3705ZSPBF
AN-1005
IRF1010
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IRL3705Z
Abstract: IRL3705ZL IRL3705ZS
Text: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V
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5854A
IRL3705Z
IRL3705ZS
IRL3705ZL
AN-994.
O-220AB
IRL3705Z
IRL3705ZL
IRL3705ZS
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Untitled
Abstract: No abstract text available
Text: PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D
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5579A
IRL3705ZPbF
IRL3705ZSPbF
IRL3705ZLPbF
O-220AB
AN-994.
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Untitled
Abstract: No abstract text available
Text: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V
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5854A
IRL3705Z
IRL3705ZS
IRL3705ZL
AN-994.
O-220AB
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IRL3705Z
Abstract: IRL3705ZL IRL3705ZS IRL3705
Text: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V
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5854A
IRL3705Z
IRL3705ZS
IRL3705ZL
AN-994.
O-220AB
IRL3705Z
IRL3705ZL
IRL3705ZS
IRL3705
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IRL3705Z
Abstract: IRL3705ZL IRL3705ZS
Text: PD - 95854 IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V
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IRL3705Z
IRL3705ZS
IRL3705ZL
AN-994.
O-220AB
IRL3705Z
IRL3705ZL
IRL3705ZS
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IRL3705Z
Abstract: IRL3705ZL IRL3705ZS
Text: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET
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IRL3705ZPbF
IRL3705ZSPbF
IRL3705ZLPbF
AN-994.
O-220AB
IRL3705Z
IRL3705ZL
IRL3705ZS
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irl3705zpbf
Abstract: IRL3705Z IRL3705ZL IRL3705ZS IRL3705
Text: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET
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IRL3705ZPbF
IRL3705ZSPbF
IRL3705ZLPbF
AN-994.
O-220AB
irl3705zpbf
IRL3705Z
IRL3705ZL
IRL3705ZS
IRL3705
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AN-994
Abstract: IRFZ48 IRFZ48L IRFZ48S
Text: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A S Description Third Generation HEXFETs from International Rectifier
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IRFZ48S/L
IRFZ48S)
IRFZ48L)
AN-994
IRFZ48
IRFZ48L
IRFZ48S
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