pin diagram of ic UC3843AD
Abstract: 4N50 UC3843A datasheet 24-ADJUSTABLE need UC3842A for input dc supply UCX843A UC2842A UC2842AD UC3842A UC3842AD
Text: Order this document by UC3842A/D UC3842A, 43A UC2842A, 43A High Performance Current Mode Controllers The UC3842A, UC3843A series of high performance fixed frequency current mode controllers are specifically designed for off–line and dc–to–dc converter applications offering the designer a cost effective solution with
|
Original
|
PDF
|
UC3842A/D
UC3842A,
UC2842A,
UC3843A
UC3842A/D*
pin diagram of ic UC3843AD
4N50
UC3843A datasheet
24-ADJUSTABLE
need UC3842A for input dc supply
UCX843A
UC2842A
UC2842AD
UC3842A
UC3842AD
|
APT0406
Abstract: APTM100A18FTG
Text: APTM100A18FTG Phase leg MOSFET Power Module VBUS NT C2 Q1 VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G2 S2
|
Original
|
PDF
|
APTM100A18FTG
APTM100A18FTG
APT0406
APTM100A18FTG
|
Untitled
Abstract: No abstract text available
Text: APTM100A18FTG Phase leg MOSFET Power Module VBUS VDSS = 1000V RDSon = 180m typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control NTC2 Q1 G1 S1 Features
|
Original
|
PDF
|
APTM100A18FTG
APTM100A18FTGâ
|
APT0406
Abstract: APT0501 APT0502 APTM100A18FTG
Text: APTM100A18FTG Phase leg MOSFET Power Module VBUS VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control NT C2 Q1 G1 Features
|
Original
|
PDF
|
APTM100A18FTG
APTM100A18FTG
APT0406
APT0501
APT0502
APTM100A18FTG
|
Untitled
Abstract: No abstract text available
Text: APT6013B2LL APT6013LLL 600V 43A 0.130W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
PDF
|
APT6013B2LL
APT6013LLL
O-264
O-264
O-247
|
Untitled
Abstract: No abstract text available
Text: APTM100A18FTG Phase leg MOSFET Power Module VBUS VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control NT C2 Q1 G1 Features
|
Original
|
PDF
|
APTM100A18FTG
APTM100A18FTGâ
|
APT6013B2FLL
Abstract: APT6013LFLL
Text: APT6013B2FLL APT6013LFLL 600V 43A 0.130W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
PDF
|
APT6013B2FLL
APT6013LFLL
O-264
O-264
O-247
APT6013B2FLL
APT6013LFLL
|
Untitled
Abstract: No abstract text available
Text: APT6013B2FLL APT6013LFLL 600V 43A 0.130W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
PDF
|
APT6013B2FLL
APT6013LFLL
O-264
O-264
O-247
|
Untitled
Abstract: No abstract text available
Text: APT6013B2LL APT6013LLL 600V 43A 0.130W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
PDF
|
APT6013B2LL
APT6013LLL
O-264
O-264
APT601
O-247
|
APT6013B2LL
Abstract: APT6013LLL
Text: APT6013B2LL APT6013LLL 600V 43A 0.130W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
PDF
|
APT6013B2LL
APT6013LLL
O-264
O-264
O-247
APT6013B2LL
APT6013LLL
|
APTM100A18FT
Abstract: No abstract text available
Text: APTM100A18FT Phase leg MOSFET Power Module VBUS NT C2 Q1 VDSS = 1000V RDSon = 180mΩ max @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G2 S2 0/VBUS
|
Original
|
PDF
|
APTM100A18FT
APTM100A18FT
APTM100A18FT
|
Untitled
Abstract: No abstract text available
Text: APTM100A18FT Phase leg MOSFET Power Module VBUS NT C2 Q1 VDSS = 1000V RDSon = 180mΩ max @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G2 S2 0/VBUS
|
Original
|
PDF
|
APTM100A18FT
APTM100A18FTâ
|
Untitled
Abstract: No abstract text available
Text: APT8018L2VR 800V 43A 0.180W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
PDF
|
APT8018L2VR
O-264
O-264
|
Untitled
Abstract: No abstract text available
Text: APT8018L2VR 0.180Ω 800V 43A POWER MOS V MOSFET L2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
PDF
|
APT8018L2VR
O-264
O-264
|
|
|
400vpf
Abstract: APT8018L2VR
Text: APT8018L2VR 800V 43A POWER MOS V MOSFET 0.240Ω L2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
PDF
|
APT8018L2VR
O-264
O-264
400vpf
APT8018L2VR
|
Untitled
Abstract: No abstract text available
Text: APT8018L2VFR 800V 43A 0.180W POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
PDF
|
APT8018L2VFR
O-264
O-264
25ine
|
Untitled
Abstract: No abstract text available
Text: APTM100DU18TG Dual Common Source MOSFET Power Module D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q1 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 D1 S VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C
|
Original
|
PDF
|
APTM100DU18TG
APTM100DU18TGâ
|
APT6013B2LL
Abstract: APT6013LLL
Text: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
PDF
|
APT6013B2LL
APT6013LLL
O-264
O-264
O-247
APT6013B2LL
APT6013LLL
|
DD2030
Abstract: No abstract text available
Text: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
PDF
|
APT6013B2LL
APT6013LLL
O-264
O-247
DD2030
|
43A 635
Abstract: NS100L 43A 538 max5630
Text: APT6013B2FLL APT6013LFLL 600V 43A 0.130Ω POWER MOS 7 R FREDFET B2FLL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
PDF
|
APT6013B2FLL
APT6013LFLL
O-264
O-264
O-247
43A 635
NS100L
43A 538
max5630
|
Untitled
Abstract: No abstract text available
Text: APT6013B2FLL APT6013LFLL 600V 43A 0.130Ω POWER MOS 7 R FREDFET B2FLL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
PDF
|
APT6013B2FLL
APT6013LFLL
O-264
O-247
|
Untitled
Abstract: No abstract text available
Text: APT8018L2VFR 0.180Ω 800V 43A POWER MOS V FREDFET L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
PDF
|
APT8018L2VFR
O-264
O-264
|
5514f
Abstract: TO220H APT5514 TO-220H
Text: ADVANCED POWER TECHNOL OGY OSE D | QESVTQT □ODDEL.4 □ | T-3^-lV APT6014FN 600V 43A 0.14 Q APT5514FN 550V 43A 0.14 Q POWER MQS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D . 'dm v gs All Ratings: Tc « 25°C unless otherwise specified.
|
OCR Scan
|
PDF
|
APT6014FN
APT5514FN
250uA)
Vol320
151ln.
5514f
TO220H
APT5514
TO-220H
|
Untitled
Abstract: No abstract text available
Text: ZENER/TVS DEVICE INDEX Note: For a complete listing of General Semiconductor part numbers, refer to the Master Data Book Index on pages 6-11. 1.5KA6.8 thru 1.5K A 43A . 310 MMSZ4681 thru MMSZ4717 . 134
|
OCR Scan
|
PDF
|
1N746thru
1N957
1N984
1N4728
1N4764
1N5225
1N5267
1N6267
1N6303
1N6373
|
