21-597
Abstract: 245d
Text: RED INDICATESORIGINAL D DIA V E ASSEMBLE FLATS PER A A 3, 2, 1. V- □ DIA ,516 ,437 .213 K 3 7 5 ±,0D5 DIA ,255 FIG ,312 WRENCH FLATS CABLE ENTRY - E ±.005 WRENCH FLATS 1A TAI-117 -003 SHGWN .290 .578 .500 ,255 .516 .437 .290 •57B .500 .255 .516 .437
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RG-174
RG-179,
RG-195,
RG-180
YR23023
RG-122
RG-58
RG-55
RG-400
RG-59,
21-597
245d
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BD433
Abstract: BD434 BD435 BD436 BD437 BD438
Text: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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BD433/435/437
BD434,
BD436
BD438
O-126
BD433
BD435
BD437
BD433
BD434
BD435
BD437
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bd435 fairchild
Abstract: No abstract text available
Text: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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BD433/435/437
BD434,
BD436
BD438
O-126
BD433
BD435
BD437
bd435 fairchild
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Untitled
Abstract: No abstract text available
Text: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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BD433/435/437
BD434,
BD436
BD438
O-126
BD433
BD435
BD437
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bd433
Abstract: BD434 BD435 BD436 BD437 BD438
Text: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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BD433/435/437
BD434,
BD436
BD438
O-126
BD433
BD435
BD437
bd433
BD434
BD435
BD437
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PDF
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bd435
Abstract: BD437 transistor bd435 transistor BD437 BD433
Text: BD433/435/437 BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 Collector current ICM: 4 Collector-base voltage BD433 V(BR)CBO: W (Tamb=25℃) 1. EMITTER 2. COLLECTOR A 3. BASE 123 22 V BD435 32 V BD437 45 V Operating and storage junction temperature range
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Original
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BD433/435/437
O-126
BD433
BD435
BD437
100mA,
bd435
BD437
transistor bd435
transistor BD437
BD433
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transistor d325
Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Text: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector
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053SbOS
00043L3
433/BD
435/BD
437/BD
439/BD
441/BD
fl23SfcÂ
---0436r
BD433.
transistor d325
TRANSISTOR BD 437
transistor BD 141
BD PNP
433 transistor
d217 siemens
BO 410
transistor BD
transistor 433 Mhz
d285
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BD437
Abstract: BD433 ic 437 BD434 BD435 437 ic
Text: SavantIC Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD434/436/438 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter
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BD433/435/437
O-126
BD434/436/438
BD433
BD435
BD437
BD437
BD433
ic 437
BD434
BD435
437 ic
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BD435
Abstract: ic 435 BD433 BD437
Text: Inchange Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD434/436/438 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1
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BD433/435/437
O-126
BD434/436/438
BD433
BD435
BD437
BD435
ic 435
BD433
BD437
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BD437
Abstract: bd433 b 435 transistor
Text: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage
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BD433/435/437
BD434,
BD436
BD438
BD433
BD435
BD437
b 435 transistor
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BD435
Abstract: transistor bd435 BD433 BD434 BD436 BD437 BD438
Text: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD433 : BD435 : BD437 Collector Emitter Voltage : BD433
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BD433/435/437
O-126
BD434,
BD436
BD438
BD433
BD435
BD437
BD435
transistor bd435
BD433
BD434
BD437
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PDF
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BD435
Abstract: BD437 transistor BD435 BD433 ic 437
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Amplifier and switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage
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O-126
BD433/435/437
O-126
BD433
BD435
BD437
250mA
BD435
BD437
transistor BD435
BD433
ic 437
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BD434
Abstract: BD438 BD436
Text: SavantIC Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD433/435/437 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter
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Original
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BD434/436/438
O-126
BD433/435/437
BD434
BD436
BD438
BD434
BD438
BD436
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PDF
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BD434
Abstract: BD436 ic 438 BD438
Text: Inchange Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD433/435/437 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1
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BD434/436/438
O-126
BD433/435/437
BD434
BD436
BD438
BD434
BD436
ic 438
BD438
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BD441
Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439
Text: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power
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N125A
BD441
bd 426
BD 440 NPN transistors
BD437
BD - 100 V
BD 439
437 bd
ic 437
BD439
B0439
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Amplifier and Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage
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Original
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O-126
BD433/435/437
O-126
BD433
BD435
BD437
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BD437
Abstract: BD433 BD435 transistor BD437 transistor BD435 BD434 BD436 BD438 TRANSISTOR BD433
Text: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol Rating Unit 22 V : BD435 32 V : BD437
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BD433/435/437
O-126
BD434,
BD436
BD438
BD435
BD437
BD433
BD437
BD433
BD435
transistor BD437
transistor BD435
BD434
TRANSISTOR BD433
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b 435 transistor
Abstract: 2A4030 BD437
Text: BD433/435/437 NPN EPITAXIAL SILICO N TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol : BD433 VcBO : BD435 : BD437 Collector Emitter Voltage : BD433
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BD433/435/437
BD434,
BD436
BD438
O-126
BD433
BD435
BD437
b 435 transistor
2A4030
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PDF
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Untitled
Abstract: No abstract text available
Text: BD433, BD435, 437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM rr 7.8 B 10.5 10.8
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BD433,
BD435,
BD437
BD434,
BD436,
BD438
00121D
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PDF
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Untitled
Abstract: No abstract text available
Text: BD433/435/437 NPN Epitaxial Silicon Transistor Features • Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base Ordering Information Part Number Marking Package Packing Method
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BD433/435/437
BD434,
BD436
BD438
O-126
BD433S
BD433
BD435S
BD435
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PDF
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Untitled
Abstract: No abstract text available
Text: BD433, BD435, 437 BD434, BD436, BD438 BD433, 435, 437 BD434,436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 - rr I_ DIM & MAX. A 7,4
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BD433,
BD435,
BD437
BD434,
BD436,
BD438
BD434
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PDF
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BD435
Abstract: BD437 BD433 TRANSISTOR BD433
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 4 A ICM: Collector-base voltage BD433 22 V V(BR)CBO:
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O-126
BD433/435/437
O-126
BD433
BD435
BD437
100mA,
BD435
BD437
BD433
TRANSISTOR BD433
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8043
Abstract: 33T4 BD433 BD434 BD435 BD436 BD437 BD438 DDD121D
Text: BD433, BD435, 437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS M edium pow er linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 DIM MIN. MAX. ‘V A 7.4
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BD433,
BD435,
BD437
BD434,
BD436,
BD438
DDD121D
8043
33T4
BD433
BD434
BD435
BD436
BD438
DDD121D
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all ic data
Abstract: BD440 BD441 BD442 BD438 BD439 BD433 BD434 BD435 BD436
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN/PNP PLASTIC MEDIUM POWER SILICON TRANSISTORS BD433, 435, 437, 439, 441 NPN BD434, 436, 438, 440, 442 PNP
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BD433,
BD434,
O-126
BD433
BD434
BD435
BD436
BD437
BD439
BD438
all ic data
BD440
BD441
BD442
BD439
BD433
BD434
BD435
BD436
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