42S1 Search Results

UPD42S18160G5-70-7-JF

Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT / 42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The

3we22

Abstract: 8001P
Contextual Info: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE jjPD421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: ^42S18160L are assembled.

Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M -W ORD BY 32-BIT DYN AM IC RA M M ODULE SO D IM M FAST PAGE MODE Description TheMC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: /42S18160L are assembled.

Contextual Info: DATA SHEET NEC / _ / MOS INTEGRATED CIRCUIT /42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description T h e ¿ P D 42S16400L, 4 21 6 4 0 0 L , 4 2 S 1 7 4 0 0 L , 4 2 1 7 4 0 0 L a re 4 194 3 0 4 w o r d s b y 4 b its d y n a m ic C M O S R A M s .

Contextual Info: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features

NEC 4217400-60

Abstract: nec 4216400 4217400-60 4216400 NEC+4217400-60
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT -//¿42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿PD 42S16400L,4216400L,42S17400L,4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The

MC-42S1LFD64SA-A60

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S1LFD64S 3.3 V OPERATION 1M-WORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM , EDO Description The MC-42S1LFD64S is a 1,048,576 words by 64 bits dynamic RAM module (Small Outline DIMM) on which 4 pieces of 16 M DRAM: µ42S18165L are assembled.

42S17800

Abstract: UPD42S17800
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The µ42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT F/ 42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M>42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The 42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //42S16800, 42S17800 can execute CAS before RAS self refresh.

42-PIN

Contextual Info: 42S1B-A Metal seal 42pin 600mil DIP EIAJ Package Code WDIP42-C-600-1.78 JEDEC Code – Weight g 1 21 e1 22 E 42 c D A1 L A A2 Symbol Z e b b1 SEATING PLANE A A1 A2 b b1 c D E e e1 L Z Dimension in Millimeters Min Nom Max – – 5.0 – – 1.0 3.44 – –

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S1000LAA32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE D e s c rip tio n The M C -42S 1000LA A 32S series is a 1,048,576 w o rd s by 32 b its d y n a m ic RAM m o d u le (S m a ll O u tlin e D IM M )

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ /¿¿P P 42S 16400, 4216400, 42S 17400,4217400 16 M-BIT DYNAM IC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The ,42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CM O S dynamic RAM s. The

TOED101

Contextual Info: NEC M OS INTEGRATED CIRCUIT /¿42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The 42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the ¿42S16800, 42S17800 can execute CAS before RAS self refresh.

NEC uPD 688

Abstract: UPD4217400LG3-A60
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs, The

LE-60

Abstract: 42S18
Contextual Info: jtiPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 1 M words by 16 bits and designed to operate from a single power supply. Optional features

d4217400

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The

Contextual Info: NEC MOS INTEGRATED CIRCUIT MC-42S1000LAA32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE D escription The MC-42S1000LAA32S series is a 1 048 576 w ords by 32 bits dynam ic RAM m odule (Small O utline DIMM) on w hich 8 pieces o f 4 M DRAM : mPD42S4400LGS (TSOP(ID) are assembled.

SL680C

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ _ _ /¡u P D 42S 16800,4216800,42317800,421780C 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The

Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ¿¿42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.

D42S17800-70

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description T he /¿42S16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and th e /42S16800, 42S17800 can exe cute CAS be fore RAS s e lf refresh.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / MC-42S1000LAD32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description T h e M C -4 2 S 1 0 0 0 LA D 3 2 S s e rie s is a 1,048,576 w o rd s b y 32 bits d y n a m ic R A M m o d u le (S m a ll O u tlin e DIM M )