4224BYTE Search Results

K9WBG08U1M

Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
Contextual Info: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.

Contextual Info: TH58BYG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BYG3S0HBAI4 is a single 1.8V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.

nand64

Contextual Info: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area

NAND64GW3FGA

Abstract: NAND64G 64Gbit NUMonyx NAND64G
Contextual Info: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area

C7478

Contextual Info: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage

NAND16GW3F4A

Abstract: 16G nand
Contextual Info: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage

Contextual Info: TC58BYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

NAND16GW3D2A

Abstract: C5761 2112B
Contextual Info: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage

hy27uf082g2b

Abstract: hy27uf082G hy27uf082 hy27uf082G2 HY27UF082G2B-F hynix nand hynix nand PROGRAMMING hynix nand flash 2gb 52-ULGA hynix nand edc spare area code
Contextual Info: 1 HY27UF 08/16 2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area

K9HCG08U1M-PCB0

Abstract: K9LBG08U0M K9lbG08U0M-PCB0 K9MDG08U5M-PCB0 K9GAG08U k9lbg08 K9GAG08 K9HCG08U1M K9MDG08U5M samsung k9lbg08u0m
Contextual Info: K9MDG08U5M K9LBG08U0M K9HCG08U1M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

NAND08GW3F2A

Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
Contextual Info: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage

16G nand

Contextual Info: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage

Contextual Info: TC58BVG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

HY27UF084G2B

Abstract: HY27UF084 hynix nand HY27UF084G2B datasheet HY27UF(08/16)4G2B Series hynix nand hynix nand 4G hynix nand flash 2gb HY27UF084G2 hynix nand HY27UF084G2B HY27UF
Contextual Info: 1 HY27UF 08/16 4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

NAND16GW3F4A

Contextual Info: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage

64Gbit

Abstract: NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G
Contextual Info: NAND64GW3D4A 64-Gbit 4 x 16 Gbits , two Chip Enable, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell (MLC) flash memory – 64 Gbits of memory array – 2 Gbits of spare area

NAND16GW3D2A

Abstract: NAND32GW3D4A
Contextual Info: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage

NAND32G

Abstract: 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash
Contextual Info: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area

32Gbit

Abstract: 16 GBit flash 32G nand flash nand32 NAND32G
Contextual Info: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Features • High-density SLC NAND flash memory – 32 Gbits of memory array – 1 Gbit of spare area – Cost-effective solutions for mass storage

Contextual Info: TC58BYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI4 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

Contextual Info: TC58BVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

Contextual Info: TH58BVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.