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    4224B Search Results

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    4224B Price and Stock

    Hammond Manufacturing REFK1904224BK1

    RACK STEEL 24.5X21.3X47.2 BLK
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    DigiKey REFK1904224BK1 Bulk 3 1
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    Mouser Electronics REFK1904224BK1
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    Newark REFK1904224BK1 Bulk 16 1
    • 1 $904.88
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    RS REFK1904224BK1 Bulk 1
    • 1 $812.73
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    Powell Electronics REFK1904224BK1 9 1
    • 1 $956.15
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    Master Electronics REFK1904224BK1
    • 1 $875.27
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    Rochester Electronics LLC CS4224-BS

    24-BIT 105 DB AUDIO CODEC
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    DigiKey CS4224-BS Bulk 34
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    Omega Engineering SW142-24-B

    ROTARY THERMOCOUPLE SELECTOR SWI
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    DigiKey SW142-24-B Bulk 1
    • 1 $338.97
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    Avnet Americas SW142-24-B Bulk 12 Weeks 1
    • 1 $338.3905
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    Newark SW142-24-B Bulk 1 1
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    RS SW142-24-B Bulk 5 Weeks 1
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    Carling Technologies 632422-4B-JF

    SWITCH ROCKER DPST 12A 125V
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    DigiKey 632422-4B-JF Bulk 13
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    Newark 632422-4B-JF Bulk 10
    • 1 $11.65
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    Master Electronics 632422-4B-JF
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    Sager 632422-4B-JF 10
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    • 1000 $3.21
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    Carling Technologies 632422-4B-JE

    SWITCH ROCKER DPST 12A 125V
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    DigiKey 632422-4B-JE Bulk 13
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    • 100 $8.41077
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    Mouser Electronics 632422-4B-JE 26
    • 1 $9.34
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    • 100 $7.67
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    Newark 632422-4B-JE Bulk 10
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    Master Electronics 632422-4B-JE
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    Sager 632422-4B-JE 10
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    Find more 4224B price and stock on Findchips.com

    4224B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K9WBG08U1M

    Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
    Text: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WBG08U1M K9KAG08U0M K9NCG08U5M K9XXG08XXM 100ns) K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P

    crc8 st7

    Abstract: ST7267 TQFP48 TQFP64 overvoltage protection ttl FAG 29 diode
    Text: ST7267 USB 2.0 HIGH SPEED MASS STORAGE MICROCONTROLLER PRELIMINARY DATA • ■ ■ ■ ■ ■ USB 2.0 Interface compliant with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – 1 control endpoint with two 64-byte buffers


    Original     		PDF ST7267 64-byte 512-byte 16-bit crc8 st7 ST7267 TQFP48 TQFP64 overvoltage protection ttl FAG 29 diode

    Untitled

    Abstract: No abstract text available
    Text: TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.


    Original     		PDF TH58BVG3S0HBAI6 TH58BVG3S0HBAI6 4096blocks. 4224-byte 4224-bytes 2013-09-20C

    Untitled

    Abstract: No abstract text available
    Text: TH58BYG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BYG3S0HBAI4 is a single 1.8V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.


    Original     		PDF TH58BYG3S0HBAI4 TH58BYG3S0HBAI4 4096blocks. 4224-byte 4224-bytes 2013-09-20C

    nand64

    Abstract: No abstract text available
    Text: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area


    Original     		PDF NAND64GW3FGA 64-Gbit 4224-byte nand64

    NAND64GW3FGA

    Abstract: NAND64G 64Gbit NUMonyx NAND64G
    Text: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area


    Original     		PDF NAND64GW3FGA 64-Gbit 4224-byte NAND64GW3FGA NAND64G 64Gbit NUMonyx NAND64G

    C7478

    Abstract: No abstract text available
    Text: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3F2B 4224-byte C7478

    NAND16GW3F4A

    Abstract: 16G nand
    Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage


    Original     		PDF NAND16GW3F4A 16-Gbit 4224-byte NAND16GW3F4A 16G nand

    Untitled

    Abstract: No abstract text available
    Text: TC58BYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58BYG2S0HBAI6 TC58BYG2S0HBAI6 2048blocks. 4224-byte 4224-bytes 2013-07-05C

    NAND16GW3D2A

    Abstract: C5761 2112B
    Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND16GW3D2A 16-Gbit, 4224-byte NAND16GW3D2A C5761 2112B

    hy27uf082g2b

    Abstract: hy27uf082G hy27uf082 hy27uf082G2 HY27UF082G2B-F hynix nand hynix nand PROGRAMMING hynix nand flash 2gb 52-ULGA hynix nand edc spare area code
    Text: 1 HY27UF 08/16 2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UF 256Mx8bit) hy27uf082g2b hy27uf082G hy27uf082 hy27uf082G2 HY27UF082G2B-F hynix nand hynix nand PROGRAMMING hynix nand flash 2gb 52-ULGA hynix nand edc spare area code

    Untitled

    Abstract: No abstract text available
    Text: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area


    Original     		PDF NAND64GW3FGA 64-Gbit 4224-byte

    K9HCG08U1M-PCB0

    Abstract: K9LBG08U0M K9lbG08U0M-PCB0 K9MDG08U5M-PCB0 K9GAG08U k9lbg08 K9GAG08 K9HCG08U1M K9MDG08U5M samsung k9lbg08u0m
    Text: K9MDG08U5M K9LBG08U0M K9HCG08U1M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9MDG08U5M K9LBG08U0M K9HCG08U1M K9XXG08UXM 4224Byte 100ns) K9HCG08U1M-PCB0 K9lbG08U0M-PCB0 K9MDG08U5M-PCB0 K9GAG08U k9lbg08 K9GAG08 K9HCG08U1M K9MDG08U5M samsung k9lbg08u0m

    NAND08GW3F2A

    Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
    Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3F2A NAND16GW3F2A 16-Gbit, 4224-byte transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60

    Untitled

    Abstract: No abstract text available
    Text: TH58BVG3S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HTA00 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.


    Original     		PDF TH58BVG3S0HTA00 TH58BVG3S0HTA00 4096blocks. 4224-byte 4224-bytes 2013-09-20C

    Untitled

    Abstract: No abstract text available
    Text: TC58BVG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58BVG2S0HBAI4 TC58BVG2S0HBAI4 2048blocks. 4224-byte 4224-bytes 2013-07-05C

    HY27UF084G2B

    Abstract: HY27UF084 hynix nand HY27UF084G2B datasheet HY27UF(08/16)4G2B Series hynix nand hynix nand 4G hynix nand flash 2gb HY27UF084G2 hynix nand HY27UF084G2B HY27UF
    Text: 1 HY27UF 08/16 4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY27UF 512Mx8bit) HY27UF084G2B HY27UF084 hynix nand HY27UF084G2B datasheet HY27UF(08/16)4G2B Series hynix nand hynix nand 4G hynix nand flash 2gb HY27UF084G2 hynix nand HY27UF084G2B

    NAND16GW3F4A

    Abstract: No abstract text available
    Text: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High-density SLC NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage


    Original     		PDF NAND16GW3F4A 16-Gbit 4224-byte NAND16GW3F4A

    Flex-OneNAND Samsung

    Abstract: Flex-OneNAND KFG4GH6U4M-DIB6 0060H-0061H samsung 16GB Nand flash KFG4G flexonenand samsung 8GB Nand flash
    Text: Flex-OneNAND4G KFG4GH6x4M-DxBx Flex-OneNAND8G(KFH8GH6x4M-DxBx) Flex-OneNAND16G(KFWAGH6x4M-DxBx) FLASH MEMORY KFG4GH6x4M KFH8GH6x4M KFWAGH6x4M 4Gb Flex-OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF Flex-OneNAND16G 80x11 Flex-OneNAND Samsung Flex-OneNAND KFG4GH6U4M-DIB6 0060H-0061H samsung 16GB Nand flash KFG4G flexonenand samsung 8GB Nand flash

    64Gbit

    Abstract: NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G
    Text: NAND64GW3D4A 64-Gbit 4 x 16 Gbits , two Chip Enable, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell (MLC) flash memory – 64 Gbits of memory array – 2 Gbits of spare area


    Original     		PDF NAND64GW3D4A 64-Gbit 4224-byte 64Gbit NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G

    NAND16GW3D2A

    Abstract: NAND32GW3D4A
    Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF 16-Gbit, 4224-byte NAND16GW3D2A NAND32GW3D4A

    NAND32G

    Abstract: 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash
    Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area


    Original     		PDF NAND32GW3D4A 32-Gbit 4224-byte NAND32G 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash

    bel 188 transistor

    Abstract: ST7267 fag 45 bad block management in mlc nand Bel 188 ct diagram BEL 188 TRANSISTOR PIN CONFIGURATION crc8 st7 hsm 002 ISD1 TQFP48
    Text: ST7267 USB 2.0 HIGH SPEED MASS STORAGE MICROCONTROLLER • ■ ■ ■ ■ ■ USB 2.0 Interface compliant with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – 1 control endpoint with two 64-byte buffers


    Original     		PDF ST7267 64-byte 512-byte 16-bit bel 188 transistor ST7267 fag 45 bad block management in mlc nand Bel 188 ct diagram BEL 188 TRANSISTOR PIN CONFIGURATION crc8 st7 hsm 002 ISD1 TQFP48

    32Gbit

    Abstract: 16 GBit flash 32G nand flash nand32 NAND32G
    Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Features • High-density SLC NAND flash memory – 32 Gbits of memory array – 1 Gbit of spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND32GW3F4A 32-Gbit 4224-byte 32Gbit 16 GBit flash 32G nand flash nand32 NAND32G