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    420 TRANSISTOR Search Results

    420 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    420 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bob smith termination POE

    Abstract: SLVU301 B1100 DIODE ETH1-230LD HPA420 panasonic ce series Capacitor 100V ETH1-230L TP10 TPS23754 coilcraft and bob smith termination
    Text: User's Guide SLVU301 – April 2009 TPS23754EVM-420 EVM: Evaluation Module for TPS23754 This User’s Guide describes the TPS23754 EVM TPS23754EVM-420 . TPS23754EVM-420 contains evaluation and reference circuitry for the TPS23754. The TPS23754 is an IEEE 802.3at compliant


    Original     		PDF SLVU301 TPS23754EVM-420 TPS23754 TPS23754 TPS23754EVM-420) TPS23754. bob smith termination POE SLVU301 B1100 DIODE ETH1-230LD HPA420 panasonic ce series Capacitor 100V ETH1-230L TP10 coilcraft and bob smith termination

    BF422

    Abstract: BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531
    Text: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531


    Original     		PDF Q62702-F531 Q62702-F495 BF422 BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531

    SOT23

    Abstract: SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23
    Text: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE BC850C SOT23 45 100 250 420 800 100 BC860C 324 BC850CW SOT323 45 100 200 420 800 100


    Original     		PDF BC850C BC860C BC850CW OT323 BC860CW BC850W BC860W BCF32 BCF29 SOT23 SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23

    F495

    Abstract: BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422
    Text: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531


    Original     		PDF Q62702-F531 Q62702-F495 F495 BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422

    420 NPN Silicon RF Transistor

    Abstract: No abstract text available
    Text: e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    Original     		PDF 1-877-GOLDMOS 1301-PTB 420 NPN Silicon RF Transistor

    100n capacitor tantalum

    Abstract: 120NQ045 CL10 SG1524B TAJA106K016R TPSD107K010R0050 TPSD336K025R0200 TPSV108K004R0035 electronic design
    Text: TANTALUM AND NIOBIUM OXIDE CAPACITORS EQUIVALENT CIRCUIT MODEL APPLICABILITY TO SIMULATION SOFTWARE J. Pelcak AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 127 Fax: +420 465 358 128, email pelcakj@avx.cz ABSTRACT


    Original     		PDF NOJC686K006R 120NQ045 TAJA106K016R GOJD337K004R 100n capacitor tantalum 120NQ045 CL10 SG1524B TAJA106K016R TPSD107K010R0050 TPSD336K025R0200 TPSV108K004R0035 electronic design

    Mn2O3

    Abstract: AVX solid tantalum capacitor SMD Transistor 7er tantalum capacitors surge current
    Text: VOLTAGE DERATING RULES FOR SOLID TANTALUM AND NIOBIUM CAPACITORS T. Zednicek AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 126 Fax: +420 467 558 128 email zednicekt@avx.cz J.Gill AVX Limited, Long Road, Paignton


    Original     		PDF

    Equivalent Circuit Model for Tantalum and Niobium Oxide Capacitors for use in Simulation Software

    Abstract: 120NQ045 SG1524B TPSV108K004R0035 100n capacitor tantalum
    Text: EQUIVALENT CIRCUIT MODEL FOR TANTALUM AND NIOBIUM OXIDE CAPACITORS FOR USE IN SIMULATION SOFTWARE J. Pelcak AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 127 Fax: +420 465 358 128, email pelcakj@avx.cz ABSTRACT


    Original     		PDF

    20031

    Abstract: 9434
    Text: e PTB 20031 40 Watts, 420–470 MHz RF Power Transistor Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB 20031 9434

    Voltage Derating Rules for Solid Tantalum and Niobium Capacitors

    Abstract: No abstract text available
    Text: Voltage Derating Rules for Solid Tantalum and Niobium Capacitors Tomáš Zedníček AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 126 Fax: +420 467 558 128 e-mail: tomas.zednicek@eur.avx.com John Gill AVX Limited, Long Road, Paignton


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DGN−8 THS3001 D−8 www.ti.com SLOS217F – JULY 1998 – REVISED JUNE 2007 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate


    Original     		PDF THS3001 SLOS217F 420-MHz 40-ns

    THS3001

    Abstract: THS3001CD THS3001CDR THS3001ID THS6012 THS6022 9551M
    Text: DGN−8 THS3001 D−8 www.ti.com SLOS217D – JULY 1998 – REVISED OCTOBER 2004 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate


    Original     		PDF THS3001 SLOS217D 420-MHz 40-ns THS3001 THS3001CD THS3001CDR THS3001ID THS6012 THS6022 9551M

    Untitled

    Abstract: No abstract text available
    Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate


    Original     		PDF THS3001 SLOS217E 420-MHz 40-ns THS3001

    THS3001

    Abstract: THS3001CD THS3001CDR THS6012 THS6022
    Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate


    Original     		PDF THS3001 SLOS217E 420-MHz 40-ns THS3001 THS3001CD THS3001CDR THS6012 THS6022

    Untitled

    Abstract: No abstract text available
    Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate


    Original     		PDF THS3001 SLOS217E 420-MHz 40-ns THS3001

    Untitled

    Abstract: No abstract text available
    Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate


    Original     		PDF THS3001 SLOS217E 420-MHz 40-ns THS3001

    THS3001

    Abstract: THS3001CD THS3001CDR THS6012 THS6022
    Text: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate


    Original     		PDF THS3001 SLOS217E 420-MHz 40-ns THS3001 THS3001CD THS3001CDR THS6012 THS6022

    BT3904

    Abstract: BC850B2
    Text: NPN Transistors NPN S ilicon T ransisto rs TO-236 Plastic Package Type Marking Code V ceo hFE Volts 100-250 160-400 250-600 100-250 160-400 250-600 110-220 200-450 110-220 200-450 420-800 110-220 200-450 420-800 200-450 420-800 200-450 420-800 fr I ces VcEsat


    OCR Scan     		PDF O-236 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BT3904 BC850B2

    BF 422

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 421, BF 423 PNP Type Marking BF 420 B F 422 Ordering Code Pin Co nfigural ion


    OCR Scan     		PDF Q62702-F531 Q62702-F495 mA102 fiS35b05 D151t BF 422

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor D escription The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20031 40 Watts, 420-470 MHz UHF TV Power Transistor D e s c rip tio n The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and


    OCR Scan     		PDF

    20031

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20031 40 Watts, 420-470 MHz UHF TV Power Transistor D escription The 20031 is a class AB, NPN, common emitter R F power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and P E P


    OCR Scan     		PDF

    ths30011

    Abstract: No abstract text available
    Text: THS3001 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER SLOS217 —JULY 1998 High Speed - 420 MHz Bandwidth G = 1, - 3 dB - 6500 V/^s Slew Rate - 40-ns Settling Time (0.1%) applications Scanning and Imaging Systems IF and RF Amplification High Output Drive, Iq = 100 mA


    OCR Scan     		PDF THS3001 420-MHz SLOS217 40-ns ths30011