42-25 10 MHZ OSCILLATOR Search Results

ROS-1023-119

Contextual Info: Voltage Controlled Oscillator Typical Performance Data ROS-1023-119+ Frequency and Tuning Sensitivity Power Output 1200 42 12 40 11 38 10 FREQ. @ -55°C FREQ. @ +85°C 1100 Frequency MHz T.SENS @ +25°C -55°C Output Power (dBm) FREQ. @ +25°C Tuning Sensitivity (MHz/V)

Contextual Info: Voltage Controlled Oscillator Typical Performance Data ZX95-2750+ Frequency and Tuning Sensitivity Power Output 3000 48 10 46 9 44 8 FREQ. @ -55°C FREQ. @ +25°C Frequency MHz T.SENS @ +25°C Output Power (dBm) 2800 2700 42 2600 40 2500 38 2400 36 2300

transistor marking 3em

Abstract: 556 ITT MMBTH10 sot-23 Marking YRE
Contextual Info: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the

NE21936

Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
Contextual Info: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de­ signed for small signal amplifier and oscillator applications up

spur free fractional PLL

Abstract: 300j crystal ATA5749 0805CS A115A S434 TSSOP10 tire pressure sensor DC Link capacitor calculation B170D
Contextual Info: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 µs

Contextual Info: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 ms

Contextual Info: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 µs

ATA5749

Abstract: S434 TSSOP10 0805CS A115A 9128D
Contextual Info: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 µs

895-6016

Abstract: XO-52B vishay xo-54b EAMM-U-70-D40-52B/C-96
Contextual Info: Vishay Dale Inductors, Quartz Crystals and Oscillators Visit VishayÕs Website at www.vishay.com Molded Inductors Quartz Crystals Flame-retardant coating, precision performance, excellent reliability and sturdy construction. Epoxy molded construction provides superior moisture protection. Wide inductance range in a small package. IMS-5 offers electromagnetic shielding.

2N3819 equivalent

Abstract: 2n3819 2n4222 to 92 2N5045 Siliconix JFET Dual
Contextual Info: 2N4222A 2N4222 2N4221A 2N4221 2N4220A 2N4220 Siliconix designed for . . . • ■ ■ ■ Performance Curves NRL See Section 5 Small-Signal Amplifiers VHF Amplifiers Oscillators M ixers BEN EFITS • High Gain • Low Receiver Noise Figure •A B S O LU TE M A X IM U M R A TIN G S 25°C

V040ME01

Contextual Info: V040ME01 9939 Via Pasar • San Diego, CA 92126 TEL 619 621-2700 FAX (619) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev B2 PHASE NOISE (1 Hz BW, typical) -50 -60 -70 -80 -90 FEATURES -100 • Frequency Range: 38 - 41 MHz • Tuning Voltage: 0-5 Vdc • MINI-14H - Style Package

AFY42

Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
Contextual Info: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in

Contextual Info: CXD2913AQ 1/3 IL08 C-MOS AUDIO PLL OSCILLATOR 33 32 31 30 29 28 27 26 25 24 23 —TOP VIEW— 15 VDD GND VDD 21 GND VDD VDD GND VDD GND GND VDD 22 21 20 19 18 17 16 15 14 13 12 22 25 24 23 XTAL SEL L-XTAL 1 L-XTAL 2 L-EN H-XTAL 1 H-XTAL 2 H-EN MST CK A128fs CK

reference manual st10r167

Abstract: p310t SGS P211 st10r167 buscon SERVICE MANUAL st10r167 st10 Bootstrap SGS-Thomson MCU st10 P47A
Contextual Info: PRELIMINARY DATA ST10C167 16-bit MCU with 32KByte ROM High performance CPU ● ● ● • ● ● ● ● ● ● 8 Port 6 8 ■ ■ ■ ● ■ ● ● ■ ● Fail-safe protection ● ● Programmable watchdog timer. Oscillator Watchdog. ■ Port 2 Port 8

2SC2217

Abstract: 2SC2367 NE21935 Ic 9148
Contextual Info: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up

NE64500

Abstract: 2SC2585 ne645 E645
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN NE64500 NE64535 NE64587 DESCRIPTION FEATURES HIGH fT The NE645 series of NPN silicon transistors is designed for low-noise amplifier and medium power oscillator applications. The N E645 series employs a new NEC proprietary fabrication

Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN NE64500 NE64535 NE64587 FEATURES DESCRIPTION • HIGH fT The NE645 series of NPN silicon transistors is designed for low-noise amplifier and medium power oscillator applications. The NE645 series employs a new NEC proprietary fabrication

TYP 513 309 PCB

Contextual Info: Surface Mount Voltage Controlled Oscillator Linear Tuning ROS-2400-1019+ 2100 to 2400 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $15.95 ea. QTY 5-49 + RoHS compliant in accordance

TYP 513 309 PCB

Abstract: 24017
Contextual Info: Surface Mount Voltage Controlled Oscillator Linear Tuning ROS-2400-1019+ 2100 to 2400 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $15.95 ea. QTY 5-49 + RoHS compliant in accordance

NE24300

Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Contextual Info: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator

Contextual Info: TTL Pulse Width Generator Modules TTL Gated Oscillators These gated oscillators perm it synchroniza­ tion of the output square wave with the high-tolow transition of the enable input. W hen the enable is high, the output is held high. The ou tput will start with a high-to-low transition one

y-parameter

Abstract: common base amplifier circuit designing FPNH10 TRANSISTOR C 3223
Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

NPN rf transistor

Abstract: FPNH10
Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

DCSR4096-10

Contextual Info: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCSR4096-10 4096 MHz OPTIMIZED frequency FEATURES: ► Optimized Tuning Frequency Band ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology ► Planar Resonator Construction