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    42-25 10 MHZ OSCILLATOR Search Results

    42-25 10 MHZ OSCILLATOR Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    IN80C186 Rochester Electronics LLC Microprocessor, 16-Bit, 10MHz, CMOS, PQCC68, PLASTIC, LCC-68 Visit Rochester Electronics LLC Buy
    D8288 Rochester Electronics LLC Control/Command Signal Generator, 10MHz, Bipolar, CDIP20, CERAMIC, DIP-20 Visit Rochester Electronics LLC Buy
    MK3200SILFTR Renesas Electronics Corporation 32.768KHz Clock Oscillator Visit Renesas Electronics Corporation
    HSP45116AVC-52 Renesas Electronics Corporation Numerically Controlled Oscillator/Modulator Visit Renesas Electronics Corporation

    42-25 10 MHZ OSCILLATOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ROS-1023-119

    Abstract: No abstract text available
    Text: Voltage Controlled Oscillator Typical Performance Data ROS-1023-119+ Frequency and Tuning Sensitivity Power Output 1200 42 12 40 11 38 10 FREQ. @ -55°C FREQ. @ +85°C 1100 Frequency MHz T.SENS @ +25°C -55°C Output Power (dBm) FREQ. @ +25°C Tuning Sensitivity (MHz/V)


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    ROS-1023-119+ ROS-1023-119 PDF

    Untitled

    Abstract: No abstract text available
    Text: Voltage Controlled Oscillator Typical Performance Data ZX95-2750+ Frequency and Tuning Sensitivity Power Output 3000 48 10 46 9 44 8 FREQ. @ -55°C FREQ. @ +25°C Frequency MHz T.SENS @ +25°C Output Power (dBm) 2800 2700 42 2600 40 2500 38 2400 36 2300


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    ZX95-2750+ PDF

    transistor marking 3em

    Abstract: 556 ITT MMBTH10 sot-23 Marking YRE
    Text: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the


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    MMBTH10 100mA OT-23 09-Feb-07 OT-23Package transistor marking 3em 556 ITT MMBTH10 sot-23 Marking YRE PDF

    spur free fractional PLL

    Abstract: 300j crystal ATA5749 0805CS A115A S434 TSSOP10 tire pressure sensor DC Link capacitor calculation B170D
    Text: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 µs


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    9128C spur free fractional PLL 300j crystal ATA5749 0805CS A115A S434 TSSOP10 tire pressure sensor DC Link capacitor calculation B170D PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 ms


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 µs


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    9128B PDF

    ATA5749

    Abstract: S434 TSSOP10 0805CS A115A 9128D
    Text: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 µs


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    9128D ATA5749 S434 TSSOP10 0805CS A115A PDF

    895-6016

    Abstract: XO-52B vishay xo-54b EAMM-U-70-D40-52B/C-96
    Text: Vishay Dale Inductors, Quartz Crystals and Oscillators Visit VishayÕs Website at www.vishay.com Molded Inductors Quartz Crystals Flame-retardant coating, precision performance, excellent reliability and sturdy construction. Epoxy molded construction provides superior moisture protection. Wide inductance range in a small package. IMS-5 offers electromagnetic shielding.


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    XT49S XO-52B XO-54B 895-6016 vishay xo-54b EAMM-U-70-D40-52B/C-96 PDF

    V040ME01

    Abstract: No abstract text available
    Text: V040ME01 9939 Via Pasar • San Diego, CA 92126 TEL 619 621-2700 FAX (619) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev B2 PHASE NOISE (1 Hz BW, typical) -50 -60 -70 -80 -90 FEATURES -100 • Frequency Range: 38 - 41 MHz • Tuning Voltage: 0-5 Vdc • MINI-14H - Style Package


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    V040ME01 MINI-14H AN-100/1 AN-102 AN-107 V040ME01 PDF

    Untitled

    Abstract: No abstract text available
    Text: CXD2913AQ 1/3 IL08 C-MOS AUDIO PLL OSCILLATOR 33 32 31 30 29 28 27 26 25 24 23 —TOP VIEW— 15 VDD GND VDD 21 GND VDD VDD GND VDD GND GND VDD 22 21 20 19 18 17 16 15 14 13 12 22 25 24 23 XTAL SEL L-XTAL 1 L-XTAL 2 L-EN H-XTAL 1 H-XTAL 2 H-EN MST CK A128fs CK


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    CXD2913AQ A128fs A258fs A512fs A1024fs D128fs D512fs D1024fs 512fs) 512fs PDF

    reference manual st10r167

    Abstract: p310t SGS P211 st10r167 buscon SERVICE MANUAL st10r167 st10 Bootstrap SGS-Thomson MCU st10 P47A
    Text: PRELIMINARY DATA ST10C167 16-bit MCU with 32KByte ROM High performance CPU ● ● ● • ● ● ● ● ● ● 8 Port 6 8 ■ ■ ■ ● ■ ● ● ■ ● Fail-safe protection ● ● Programmable watchdog timer. Oscillator Watchdog. ■ Port 2 Port 8


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    ST10C167 16-bit 32KByte 16-channel 10-bit. ST10C167 reference manual st10r167 p310t SGS P211 st10r167 buscon SERVICE MANUAL st10r167 st10 Bootstrap SGS-Thomson MCU st10 P47A PDF

    ad9958 Application

    Abstract: No abstract text available
    Text: 2-Channel 500 MSPS DDS with 10-Bit DACs AD9958 Preliminary Technical Data Software-/hardware-controlled power-down Dual supply operation 1.8 V DDS core/3.3 V serial I/O Multiple device synchronization Selectable 4x to 20× REF_CLK multiplier (PLL) Selectable REF_CLK crystal oscillator


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    10-bit 32-bit 14-bit AD9958 MO-220-VLLD-2 56-Lead CP-56) AD9958BCPZ1 ad9958 Application PDF

    TYP 513 309 PCB

    Abstract: No abstract text available
    Text: Surface Mount Voltage Controlled Oscillator Linear Tuning ROS-2400-1019+ 2100 to 2400 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $15.95 ea. QTY 5-49 + RoHS compliant in accordance


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    ROS-2400-1019+ CK605 2002/95/EC) 10KHz 100KHz TYP 513 309 PCB PDF

    TYP 513 309 PCB

    Abstract: 24017
    Text: Surface Mount Voltage Controlled Oscillator Linear Tuning ROS-2400-1019+ 2100 to 2400 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $15.95 ea. QTY 5-49 + RoHS compliant in accordance


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    ROS-2400-1019+ CK605 2002/95/EC) 10KHz 100KHz TYP 513 309 PCB 24017 PDF

    NPN rf transistor

    Abstract: FPNH10
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


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    FPNH10 NPN rf transistor FPNH10 PDF

    DCSR4096-10

    Abstract: No abstract text available
    Text: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCSR4096-10 4096 MHz OPTIMIZED frequency FEATURES: ► Optimized Tuning Frequency Band ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology ► Planar Resonator Construction


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    DCSR4096-10 Ab449; EV31369834; DCSR4096-10 PDF

    NE21936

    Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
    Text: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de­ signed for small signal amplifier and oscillator applications up


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    QG013T3 r-31- NE219 NE21936 NE21935 equivalent 2SC2367 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174 PDF

    2N3819 equivalent

    Abstract: 2n3819 2n4222 to 92 2N5045 Siliconix JFET Dual
    Text: 2N4222A 2N4222 2N4221A 2N4221 2N4220A 2N4220 Siliconix designed for . . . • ■ ■ ■ Performance Curves NRL See Section 5 Small-Signal Amplifiers VHF Amplifiers Oscillators M ixers BEN EFITS • High Gain • Low Receiver Noise Figure •A B S O LU TE M A X IM U M R A TIN G S 25°C


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    PDF

    AFY42

    Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
    Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in


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    AFY42 AFY42 60106-Y BIfi03 U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B PDF

    2SC2217

    Abstract: 2SC2367 NE21935 Ic 9148
    Text: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up


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    NE21900 NE21903 NE21908 NE21935 NE219 NE21900) S12S21| NE21900, E21903, E21908, 2SC2217 2SC2367 NE21935 Ic 9148 PDF

    NE64500

    Abstract: 2SC2585 ne645 E645
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN NE64500 NE64535 NE64587 DESCRIPTION FEATURES HIGH fT The NE645 series of NPN silicon transistors is designed for low-noise amplifier and medium power oscillator applications. The N E645 series employs a new NEC proprietary fabrication


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    NE64500 NE64535 NE64587 NE645 IL-S-19500 IL-STD-750. NE64500 IS12I S12S21| NE64500, 2SC2585 E645 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN NE64500 NE64535 NE64587 FEATURES DESCRIPTION • HIGH fT The NE645 series of NPN silicon transistors is designed for low-noise amplifier and medium power oscillator applications. The NE645 series employs a new NEC proprietary fabrication


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    NE64500 NE64535 NE64587 NE645 MIL-S-19500 MIL-STD-750. GH000 IS12I NE64500, PDF

    NE24300

    Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
    Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator


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    b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318 PDF

    Untitled

    Abstract: No abstract text available
    Text: TTL Pulse Width Generator Modules TTL Gated Oscillators These gated oscillators perm it synchroniza­ tion of the output square wave with the high-tolow transition of the enable input. W hen the enable is high, the output is held high. The ou tput will start with a high-to-low transition one


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    500ppm PDF