ROS-1023-119
Abstract: No abstract text available
Text: Voltage Controlled Oscillator Typical Performance Data ROS-1023-119+ Frequency and Tuning Sensitivity Power Output 1200 42 12 40 11 38 10 FREQ. @ -55°C FREQ. @ +85°C 1100 Frequency MHz T.SENS @ +25°C -55°C Output Power (dBm) FREQ. @ +25°C Tuning Sensitivity (MHz/V)
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ROS-1023-119+
ROS-1023-119
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Untitled
Abstract: No abstract text available
Text: Voltage Controlled Oscillator Typical Performance Data ZX95-2750+ Frequency and Tuning Sensitivity Power Output 3000 48 10 46 9 44 8 FREQ. @ -55°C FREQ. @ +25°C Frequency MHz T.SENS @ +25°C Output Power (dBm) 2800 2700 42 2600 40 2500 38 2400 36 2300
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ZX95-2750+
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transistor marking 3em
Abstract: 556 ITT MMBTH10 sot-23 Marking YRE
Text: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the
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MMBTH10
100mA
OT-23
09-Feb-07
OT-23Package
transistor marking 3em
556 ITT
MMBTH10
sot-23 Marking YRE
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spur free fractional PLL
Abstract: 300j crystal ATA5749 0805CS A115A S434 TSSOP10 tire pressure sensor DC Link capacitor calculation B170D
Text: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 µs
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9128C
spur free fractional PLL
300j crystal
ATA5749
0805CS
A115A
S434
TSSOP10
tire pressure sensor
DC Link capacitor calculation
B170D
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 ms
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 µs
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9128B
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ATA5749
Abstract: S434 TSSOP10 0805CS A115A 9128D
Text: Features • • • • • • • • • • • • • • Fully Integrated Fractional-N PLL ASK and Closed Loop FSK Modulation Output Power Up to +12.5 dBm from 300 MHz to 450 MHz Current Consumption is Scaled by Output Power Programming Fast Crystal Oscillator Start-up Time of Typically 200 µs
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9128D
ATA5749
S434
TSSOP10
0805CS
A115A
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895-6016
Abstract: XO-52B vishay xo-54b EAMM-U-70-D40-52B/C-96
Text: Vishay Dale Inductors, Quartz Crystals and Oscillators Visit VishayÕs Website at www.vishay.com Molded Inductors Quartz Crystals Flame-retardant coating, precision performance, excellent reliability and sturdy construction. Epoxy molded construction provides superior moisture protection. Wide inductance range in a small package. IMS-5 offers electromagnetic shielding.
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XT49S
XO-52B
XO-54B
895-6016
vishay xo-54b
EAMM-U-70-D40-52B/C-96
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V040ME01
Abstract: No abstract text available
Text: V040ME01 9939 Via Pasar • San Diego, CA 92126 TEL 619 621-2700 FAX (619) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev B2 PHASE NOISE (1 Hz BW, typical) -50 -60 -70 -80 -90 FEATURES -100 • Frequency Range: 38 - 41 MHz • Tuning Voltage: 0-5 Vdc • MINI-14H - Style Package
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V040ME01
MINI-14H
AN-100/1
AN-102
AN-107
V040ME01
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PDF
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Untitled
Abstract: No abstract text available
Text: CXD2913AQ 1/3 IL08 C-MOS AUDIO PLL OSCILLATOR 33 32 31 30 29 28 27 26 25 24 23 —TOP VIEW— 15 VDD GND VDD 21 GND VDD VDD GND VDD GND GND VDD 22 21 20 19 18 17 16 15 14 13 12 22 25 24 23 XTAL SEL L-XTAL 1 L-XTAL 2 L-EN H-XTAL 1 H-XTAL 2 H-EN MST CK A128fs CK
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CXD2913AQ
A128fs
A258fs
A512fs
A1024fs
D128fs
D512fs
D1024fs
512fs)
512fs
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PDF
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reference manual st10r167
Abstract: p310t SGS P211 st10r167 buscon SERVICE MANUAL st10r167 st10 Bootstrap SGS-Thomson MCU st10 P47A
Text: PRELIMINARY DATA ST10C167 16-bit MCU with 32KByte ROM High performance CPU ● ● ● • ● ● ● ● ● ● 8 Port 6 8 ■ ■ ■ ● ■ ● ● ■ ● Fail-safe protection ● ● Programmable watchdog timer. Oscillator Watchdog. ■ Port 2 Port 8
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ST10C167
16-bit
32KByte
16-channel
10-bit.
ST10C167
reference manual st10r167
p310t
SGS P211
st10r167 buscon
SERVICE MANUAL st10r167
st10 Bootstrap
SGS-Thomson MCU st10
P47A
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ad9958 Application
Abstract: No abstract text available
Text: 2-Channel 500 MSPS DDS with 10-Bit DACs AD9958 Preliminary Technical Data Software-/hardware-controlled power-down Dual supply operation 1.8 V DDS core/3.3 V serial I/O Multiple device synchronization Selectable 4x to 20× REF_CLK multiplier (PLL) Selectable REF_CLK crystal oscillator
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10-bit
32-bit
14-bit
AD9958
MO-220-VLLD-2
56-Lead
CP-56)
AD9958BCPZ1
ad9958 Application
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PDF
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TYP 513 309 PCB
Abstract: No abstract text available
Text: Surface Mount Voltage Controlled Oscillator Linear Tuning ROS-2400-1019+ 2100 to 2400 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $15.95 ea. QTY 5-49 + RoHS compliant in accordance
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ROS-2400-1019+
CK605
2002/95/EC)
10KHz
100KHz
TYP 513 309 PCB
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TYP 513 309 PCB
Abstract: 24017
Text: Surface Mount Voltage Controlled Oscillator Linear Tuning ROS-2400-1019+ 2100 to 2400 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $15.95 ea. QTY 5-49 + RoHS compliant in accordance
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ROS-2400-1019+
CK605
2002/95/EC)
10KHz
100KHz
TYP 513 309 PCB
24017
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PDF
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NPN rf transistor
Abstract: FPNH10
Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
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FPNH10
NPN rf transistor
FPNH10
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DCSR4096-10
Abstract: No abstract text available
Text: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCSR4096-10 4096 MHz OPTIMIZED frequency FEATURES: ► Optimized Tuning Frequency Band ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology ► Planar Resonator Construction
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DCSR4096-10
Ab449;
EV31369834;
DCSR4096-10
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NE21936
Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
Text: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de signed for small signal amplifier and oscillator applications up
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QG013T3
r-31-
NE219
NE21936
NE21935 equivalent
2SC2367
NE21900
2SC2869
nec 2sc2218
NE21903
NE21937
2SC22174
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PDF
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2N3819 equivalent
Abstract: 2n3819 2n4222 to 92 2N5045 Siliconix JFET Dual
Text: 2N4222A 2N4222 2N4221A 2N4221 2N4220A 2N4220 Siliconix designed for . . . • ■ ■ ■ Performance Curves NRL See Section 5 Small-Signal Amplifiers VHF Amplifiers Oscillators M ixers BEN EFITS • High Gain • Low Receiver Noise Figure •A B S O LU TE M A X IM U M R A TIN G S 25°C
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PDF
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AFY42
Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in
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AFY42
AFY42
60106-Y
BIfi03
U120
103MHZ
400M
GR22B
Germanium Transistor
Germanium mesa
SZ2B
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PDF
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2SC2217
Abstract: 2SC2367 NE21935 Ic 9148
Text: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up
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NE21900
NE21903
NE21908
NE21935
NE219
NE21900)
S12S21|
NE21900,
E21903,
E21908,
2SC2217
2SC2367
NE21935
Ic 9148
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PDF
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NE64500
Abstract: 2SC2585 ne645 E645
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN NE64500 NE64535 NE64587 DESCRIPTION FEATURES HIGH fT The NE645 series of NPN silicon transistors is designed for low-noise amplifier and medium power oscillator applications. The N E645 series employs a new NEC proprietary fabrication
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NE64500
NE64535
NE64587
NE645
IL-S-19500
IL-STD-750.
NE64500
IS12I
S12S21|
NE64500,
2SC2585
E645
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN NE64500 NE64535 NE64587 FEATURES DESCRIPTION • HIGH fT The NE645 series of NPN silicon transistors is designed for low-noise amplifier and medium power oscillator applications. The NE645 series employs a new NEC proprietary fabrication
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NE64500
NE64535
NE64587
NE645
MIL-S-19500
MIL-STD-750.
GH000
IS12I
NE64500,
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NE24300
Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator
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b4E7414
00D2371
NE243
NE24300
NE243187
NE243188
NE243287
NE243288
transistor 81 110 w 63
transistor 81 110 w 85
NE243499
NE24318
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Untitled
Abstract: No abstract text available
Text: TTL Pulse Width Generator Modules TTL Gated Oscillators These gated oscillators perm it synchroniza tion of the output square wave with the high-tolow transition of the enable input. W hen the enable is high, the output is held high. The ou tput will start with a high-to-low transition one
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500ppm
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PDF
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