Z86C1200ZEM
Abstract: Z86E61 Z86E63
Text: Z86E61/E63 CPS DC-4164-03 Z86E61 AND Z86E63 CMOS Z8 OTP MICROCONTROLLER GENERAL DESCRIPTION The Z86E61 is a member of the Z8 ® single-chip microcontroller family with 16 Kbytes of EPROM and 236 bytes of general-purpose RAM and the Z86E63 has 32K bytes of EPROM.
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Z86E61/E63
DC-4164-03
Z86E61
Z86E63
Z86E63
Z86E61/63
Z86C61/63.
Z86E61/63
Z86C1200ZEM
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PEB 4165 T
Abstract: AC GENERATOR PEB 3465 V1.2 PEB 3465 PEB 4166 T
Text: A pplic ation N ote, D S2, Jan. 2001 MuSLIC Multichannel Subscriber Line Interface Concept PEB 3465 V 1.2 PEB 31666/31665/31664 V1.3 PEB 4166/4165/4164 V2.3 Coefficient Handling of MuSLIC Chipset Wired Communications N e v e r s t o p t h i n k i n g . Edition 2001-01-15
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D-81541
PEB 4165 T
AC GENERATOR
PEB 3465 V1.2
PEB 3465
PEB 4166 T
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smd diode marking LM
Abstract: 4166 ic equivalent PEB 4165 T ntp 3000 HIGHWAY drv 801 ic MVAM-1 PEB 4166 T PEB31666 PEB3465 PEB4164
Text: Pr el imi nar y Dat a Sh eet , DS1 , Ju ly 20 00 MuSLIC M u l t i c h a n n e l S u b s c r i b e r L in e Interface Concept PEB 3465 Version 1.2 PEB 31666/31664 Version 1.3 PEB 4166/4164 Version 2.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g .
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D-81541
smd diode marking LM
4166 ic equivalent
PEB 4165 T
ntp 3000
HIGHWAY drv 801 ic
MVAM-1
PEB 4166 T
PEB31666
PEB3465
PEB4164
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AN-3004
Abstract: valve control example l1.2 Multivibrator 555
Text: BACK AN3004 sames AN3004 APPLICATION NOTE SA9202 PORT EXPANDER The SA9202 family of port expanders may be used in a variety of applications in industries ranging from agricultural to food processing or telecommunications. This application note describes how the SA9202 could be applied in a typical industrial control system.
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AN3004
AN3004
SA9202
PDS038-SA9202-001
100Hz
AN-3004
valve control example
l1.2
Multivibrator 555
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ARM92EJ-S
Abstract: 2BPP 581k embedded projects
Text: C/ GUI TM Embedded Graphical User Interface μC/GUI Embedded Graphical User Interface™ DESCRIPTION μC/GUI is universal graphical software for embedded applications that provides an efficient processor and LCD controller-independent GUI to applications using a graphical LCD. Designed for single and
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32-bits
16-bit
RLE16
16bpp
24bpp
32bpp
ARM92EJ-S
2BPP
581k
embedded projects
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PEB3465
Abstract: PEB 4165 T PEB31665 dcnc PEB 4166 T P-MQFP-80-1 smd marking KH PEB31664 PEB31666 PEB4164
Text: Dat a Sh eet , DS1 , Ju ly 20 00 QAP Q u a d A n a lo g P O TS PEB 3465 Version 1.2 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000-07-14 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany
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D-81541
PEB3465
PEB 4165 T
PEB31665
dcnc
PEB 4166 T
P-MQFP-80-1
smd marking KH
PEB31664
PEB31666
PEB4164
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IC 4164
Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Text: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability
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536-Bit
16-pin
iPin12)
HYB41
IC 4164
4164-2 RAM
4164 ram
4164
ram mos 4164
4164-2
HYB4164
RAM 4164
4164 eve
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4164 ram
Abstract: HYB4164 4164-2 RAM HYB4164-P2 4164 4164 dynamic ram siemens hyb4164 4164-2 RAM 4164 HYB4164-1
Text: SIEM ENS HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 b it organization • • A ll inputs and outputs TTL com patible • High over- and undershooting capability on all inputs • Low supply current transients
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536-Bit
536X1
16-pin
HYB4164-1)
HYB4164-3)
HYB4164-P1
HYB4164-P2
HYB41
64-P3
4164 ram
HYB4164
4164-2 RAM
4164
4164 dynamic ram
siemens hyb4164
4164-2
RAM 4164
HYB4164-1
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LJ64
Abstract: No abstract text available
Text: LCD MODULE SPECIFICATION Model : MLCM4164B - - - Revision - 02 Engineering; Date 2003 Our Reference 4164 9 p 25 B MODE OF DISPLAY Display m ode Display condition Viewing direction □ TN positive □ TW negative STN : □ Yellow green □ Grey Lj Blue negative
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MLCM4164B
1164B
LJ64
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SN76477
Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p
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2114L
6116P3
6116LP3
AY-3-1270
AY-3-1350
AY-3-8910
AY-3-8912
AY-5-1230
CA3080E
CA3130E
SN76477
TNY 176 PN EQUIVALENT
2n4401 free transistor equivalent book
tis43
XR2206 application notes
Semiconductor Data Handbook mj802
2N3866 s2p
bc149c
TIP35C TIP36C sub amplifier circuit diagram
LM131
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TMS4164A
Abstract: TM41 TM4164 TMS4416 RAM 4164 TM41 diode TM4164EL9 pj 889 diode
Text: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164EL9 . . . L SINGLE-IN-LINE PACKAGE* T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5 -V Supply 1 0 % Tolerance (TOP VIEW)
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TM4164EL9,
TM4164FM9
30-Pin
TM4164EL9
TM4164_
TMS4164A
TM41
TM4164
TMS4416
RAM 4164
TM41 diode
TM4164EL9
pj 889 diode
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Untitled
Abstract: No abstract text available
Text: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164E L9 . . . L SINGLE-IN-LINE PACKAGEf T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance (TOP VIEW)
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TM4164EL9,
TM4164FM9
30-Pin
4164E
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4164 ram
Abstract: RAM 4164 schemat
Text: RAS I Î CAS f t 64 A0/A7 A l/AS >* M A2/A9 } Butor «tzekoiüw Jj j ' « I A3 /AtO A4/A11 A5/A12 A6/A13 WzmacrMocz oòczytu -X a 128 — i 54 RAM n t64wiersze * 128 kotumnf 128 Bufar wyjéaowy I Ocfcoder koiumn 12128 WR Î J Rys. 1.37. Schemat blokowy ukiadu pamiçci 64 Kbit (typ 4164)
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A4/A11
A5/A12
A6/A13
64wiersze
4164 ram
RAM 4164
schemat
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sense amplifier bitline memory device
Abstract: F4164 F4164-1 F4164-2 F4164-3
Text: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows
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F4164
F4164
sense amplifier bitline memory device
F4164-1
F4164-2
F4164-3
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4164 ram
Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Text: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*
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TM4164EL9,
TM4164FM9
30-Pin
4164EL9
4164FM
4164 ram
4164 dynamic ram
RAM 4164
4Q709
4164
4164 (RAM)
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LM 4138
Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
Text: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,
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TLCS-870/X
000FC
00102H
00FCH
11110000B
11011000B
11111111B
00001111B
10100110B
LM 4138
HL 482
RAM 4163
cd 4162
GFIJ
c 4161
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4164 ram
Abstract: IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
Text: TEXAS INSTR -CASIC/flEMORY} 77 DE§ 0Tbl7SS 0040737 3 0 9 6 1 7 2 5 TEXAS INSTR <ASIC/MEMORY T7C 4 0 7 3 7 TM4164FL8, TM4164FM8 65.536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1985 TM 4164FL8 . TM 4164FM 8 6 5,5 36 X 8 Organization Single 5-V Supply 10% Tolerance)
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TM4164FL8,
TM4164FM8
30-Pin
4164FL8
4164FM
4164 ram
IC 4164
DYNAMIC RAM 65536 TEXAS
tms4164
RAM 4164
4164 (RAM)
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4164-12
Abstract: NEC 4164 PD4164 4164-10 LPD416
Text: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both
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uPD4164
536-word
M-PD4164
PD4164
fxPD4164
4164-12
NEC 4164
4164-10
LPD416
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dram 4164
Abstract: 74670 register 41256
Text: UNITED MICROELECTRONICS 30E D • q3a5fl5a 00001 51 T ■ T ~ 5 ^ - 3 3 -òS UM82C088 PC/X T Integration Chip Features ■ Fully IBM-PC/XT compatible ■ 82C84 Clock generator with 2 clock-inputs to generate the CPU clock. These are 14.318 MHz and 30 MHz which will support 4.77 MHz and 10 MHz CPU clocks
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UM82C088
82C84
82C88
82C37
82C59
82C53
82C55
dram 4164
74670 register
41256
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information applikation
Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Text: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond
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lm3364
Abstract: M5K4164NP-15 LM3364-15 LM3364-20 AM9064-15 M5K4164NS-15 IMS2600-15 A9064 C2164-15 M5K4164NP-20
Text: - 168 - X m % tt £ CC TRAC max ns) 6 4 K nMOS D y n a m i c + y :7' ft 'ft 'f (ns) TCAD rain (ns) TRCY TAH min (ns) TP nil) (ns) TWCY min (ns) TDH rain (ns) RAM (6 5 5 3 6 x 1 ) £ TRWC min (ns) V D D or V C C (V) A M I DD max <mA) I D D STANDBY (ISB/ISB2)
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16PIN
An9064-10
M5K4164AP-10
M5K4164AP-12
M5K4164AP-15
M5K4164NP-15
M5K4164NP-20
M5K4164NS-15
M5K4164P-15
lm3364
LM3364-15
LM3364-20
AM9064-15
IMS2600-15
A9064
C2164-15
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Untitled
Abstract: No abstract text available
Text: □PM Dense-Pac Microsystems, Inc. DPS8256P8 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access M em o ry SRAM m o d u le constructed on an ep oxy lam inate substrate using eight 256K x 1 C M O S RAM 's in plastic surface
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DPS8256P8
DPS8256P8-25,
DPS8256P8
DPS8256P8-25
DPS8256P8-35
DPS8256P8-45
DPS8256P8-55
30A033-00
30A033-00
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4164 ram
Abstract: lh521008
Text: CMOS 128K x 8 Static RAM FEATURES • Fast Access Times: 20/25/35 ns • JEDEC Standard Pinout • High Density 32-Pin, 400-mil SOJ Package • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • 2 V Data Retention
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32-Pin,
400-mil
32-PIN
LH521008
I---------25
SOJ32-P-400)
LH521008K-25
4164 ram
lh521008
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150TYP
Abstract: No abstract text available
Text: DS2257, DS 2257S DALLAS SEMICONDUCTOR DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design A12 C C A7 Z A14 • Standby current 400 nA max at 500 nA max at 4 jiA max at 10 nA max at tA = 25°C tA = 25°C tA = 60°C
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DS2257,
2257S
DS2257S
DS2257S
28-PIN
150TYP
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