transistor 415
Abstract: MARKING 416 OPTO OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296 SFH 960
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,
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stea01-01
GEO06645
GEX06630
transistor 415
MARKING 416 OPTO
OHRD1938
Q62702-P1137
Q62702-P1139
Q62702-P296
SFH 960
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transistor 415
Abstract: OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,
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GEOY6645
GEXY6630
transistor 415
OHRD1938
Q62702-P1137
Q62702-P1139
Q62702-P296
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Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,
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415-U
416-R
Q62702-P296
Q62702-P1137
Q62702-P1139
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Standish LCD
Abstract: STANDISH LCD DISPLAYS hamlin lcd hamlin 3909 3900-365-920 HD61100 3940-365-920 10.1 inch lcd with led backlight 40 pin connector pinout 3902-365-920 SIM204DSHWLE4
Text: Representing Electronic Components http://www.csc-intl.com • a n a d ia n S o u r c e C o r p o r a t io n Winnipeg Tel: 204 897-4401 Fax: (204) 897-3181 Ottawa Tel: (613) 592-5641 Fax: (905) 415-1953 Toronto Head Office Tel: (905) 415-1951 Fax:(905)415-1953
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11III
W7514
Standish LCD
STANDISH LCD DISPLAYS
hamlin lcd
hamlin 3909
3900-365-920
HD61100
3940-365-920
10.1 inch lcd with led backlight 40 pin connector pinout
3902-365-920
SIM204DSHWLE4
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PDF
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Untitled
Abstract: No abstract text available
Text: NetChip Technology, Inc. 625-C Clyde Avenue Mountain View, California 94043 415 526-1490 Fax (415) 526-1494 e-mail: dtu@worldnet.att.net NET2868 USB Hub Controller Preliminary Specification Document: TBD Revision: 0.4 Date: 10/29/96 Specification NET2868 USB Hub Controller
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625-C
NET2868
19stream
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on 5295 transistor
Abstract: on 5295 equivalents JANTX2N28 2N2812 2N2814 JAN2N2812 JAN2N2814 transistors substitute JANTX2N2814
Text: MIL SPECS ï c | 0000125 OOOBSOb T | ~ MIL-S-195Ü0/415 USAF NOTICE 1 9 September 1986 NOTICE I [OF VALIDATION! MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812, AND 2N2814 JAN, AND JANTX MIL-S-19500/415(USAF) Amendment 2, dated 18 April 1973, has been reviewed and
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MIL-S-19500/415
2N2812,
2N2814
MIL-S-19500,
MIL-S-19500
5961-F208)
on 5295 transistor
on 5295 equivalents
JANTX2N28
2N2812
JAN2N2812
JAN2N2814
transistors substitute
JANTX2N2814
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BC 418
Abstract: bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415
Text: *BC 415 BC 416 PNP SILICON TRANSISTORS, EPITA X IA L PLANAR TRANSISTORS PNP S ILIC IU M , PLA N A R E P IT A X IA U X % Preferred device D is p o s itif recommandé The BC 415 and BC 416 are very low noise transistors intended for input stages in audio ^ frequency amplifiers.
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CB-76
BC 418
bc415b
ssv 620
BC416A
bc415a
bc415
bc415c
416b
IC 415
ms 415
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLCS-470 Series TMP47C215/415 CMOS 4-Bit Microcontroller single chip microcomputer, integrating ROM, RAM, input/out put ports, timer/counters, a serial interface, and two clock generators on a chip. TMP47C215N TMP47C415N The 47C215/415 is a high speed and high performance 4-bit
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TLCS-470
TMP47C215/415
TMP47C215N
TMP47C415N
47C215/415
TLCS470
SDIP42-P-600
244//S
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PDF
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HPA415
Abstract: TPS54232D GRM31CR61E106KA
Text: User's Guide SLVU277 – January 2009 TPS54232EVM-415 2-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3
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SLVU277
TPS54232EVM-415
HPA415
TPS54232D
GRM31CR61E106KA
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PDF
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GA05JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 2.1 V 5A 415 m Features • 250 °C maximum operating temperature Temperature independent switching performance
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GA05JT065-CAL
GA05JT065
22E-47
91E-27
37E-10
36E-10
50E-02
GA05JT065-CAL
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PDF
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Untitled
Abstract: No abstract text available
Text: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417
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BF416
BF418
-25mA)
-250V
-300V
70MHz
O-126-
CB-16
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TRANSISTOR BC 416 b pnp
Abstract: TRANSISTOR BC 415 TRANSISTOR BC 416 b TRANSISTOR BC 415 b pnp BC 104 transistor bc416 TFK 802 tfk 416 TFK 110 TRANSISTOR BC 560
Text: BC 415 • BC 416 Silizium-PNP-Epitaxial-Planar NF-Transistoren Silicon PN P Epitaxial Planar A F Transistors Anwendungen: Rauscharme Vorstufen Applications: Low noise pre stages Features: Besondere Merkmale: • Rauschmaß < 2 dB • Noise figure < 2 dB • In Gruppen sortiert
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound
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FMMT415
FMMT417
AEC-Q101
J-STD-020
FMMT415-FMMT417
DS33084
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ic SL 1626
Abstract: 100C 2N2812 2N2814
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 January 2004. MIL-PRF-19500/415A 31 October 2003 SUPERSEDING MIL-S-19500/415 USAF 10 July 1969 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
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MIL-PRF-19500/415A
MIL-S-19500/415
2N2812
2N2814
MIL-PRF-19500.
ic SL 1626
100C
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ALD1101A
Abstract: ALD1101 ALD1101B ALD1102 mosfet Vgs 10mV
Text: ADVANCED LINEAR DEVICES, INC. ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: 408 747-1155 Fax: (408) 747-1286 http://www.aldinc.com GENERAL DESCRIPTION
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ALD1101A/ALD1101B
ALD1101
ALD1101
10X10-6
10X10-9
10X10-12
ALD1101A
ALD1101B
ALD1102
mosfet Vgs 10mV
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PDF
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SFH415 applications
Abstract: No abstract text available
Text: SFH 415 SFH 416 SIEMENS GaAs Infrared Emitter Dimensions in inches mm C t»p Position .217(5.5) .024(0.6) .016(0.4) .100(2.54) sp a ri a^ng T (1.ÔL, (12p .071(14 .047 T A. Cathode (Diode) ' Collector (Transistor) Approx. weight 0.4g CoHector SFH416 FEATURES
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SFH416
SFH415
416-R
-SFH415
SFH416
SFH415 applications
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BF418
Abstract: BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video
Text: BF 416 *BF418 PNP SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL Compì, of BF 415 and BF 417 Preferred device D isp o sitif recommandé Video output stages in T V sets Etages de sortie des amplificateurs Video dans ies téléviseurs
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BF416
BF418
O-126-
CB-16
BF418
BF416
J BF418
416 TRANSISTOR
BF transistor
BF417
transistor 417
Bf 417 g transistor
BF415
emetteur video
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BC413
Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c
Text: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP
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A53Sba5
D041S64
VPTO52I2
Q62702-C375
Q62702-C375-V1
Q62702-C375-V2
Q62702-C376
Q62702-C376-V1
Q62702-C376-V2
35Li05
BC413
AMI siemens
BC414C
N 413 af
BC414
BC413C
bc 580
BTB 700
siemens marking 411
414c
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PDF
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Untitled
Abstract: No abstract text available
Text: JS524575 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)75 Absolute Max. Power Diss. (W)415 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)4.0m I(GSS) Max. (A)500n
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JS524575
NumberTR00300008
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bc 471
Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
Text: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN
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fi23SbGS
Q62702-C377
Q62702-C377-V1
Q62702-C377-V2
Q62702-C377-V3
Q62702-C378
Q62702-C378-V1
Q62702-C378-V2
Q62702-C378-V3
fl535b05
bc 471
IC 415
BC 241
bc 415 c
BC415
BC416C
bc 188
BC415B
Bc 188 pnp
IR LFN
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PDF
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Untitled
Abstract: No abstract text available
Text: Am93L415/Am93L425 1024 X 1 Bit TTL Bipolar IMOX RAM Output preconditioned during write to eliminate write recovery glitch Available with three-state outputs Am93L425 series or with open-collector outputs (Am93L415 series) Plug-in replacement for Fairchild 93L415A/415 and
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Am93L415/Am93L425
1024-word
93L415A/425A
Am93L425
Am93L415
93L415A/415
93L425A/425,
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PDF
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2SD415
Abstract: 2SD414 2SB548 2SB549 nec transistor 2sb549 NEC 2SD414 SD414
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package
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2SB548,
549/2SD414,
2SB549/
2SD415
2SB548/
2SD414
2SD415
2SD414
2SB548
2SB549
nec transistor 2sb549
NEC 2SD414
SD414
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PDF
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CPC5621A
Abstract: CPC5603C CPC5603CTR CPC5620A CPC5622A depletion mode fet
Text: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance
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CPC5603
OT-223
CPC5603
DS-CPC5603-R03
CPC5621A
CPC5603C
CPC5603CTR
CPC5620A
CPC5622A
depletion mode fet
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PDF
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bc177
Abstract: No abstract text available
Text: | N AMER PHILIPS/DISCRETE b'lE D bb53T31 Q0S7513 415 H A P X BC177 to 179 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes with the collector connected to the case. The BC177 is a high-voltage type and primarily intended for use in driver stages of audio amplifiers
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bb53T31
Q0S7513
BC177
BC178
BC179
BC107,
0Q27S20
DD275S1
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PDF
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