4123 TRANSISTOR Search Results

UNR4121

Abstract: UNR4122 UNR4123 UNR4124 UNR412X UNR412Y transistor 4124 marking 4123
Contextual Info: Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 3.0±0.2 4.0±0.2 • Features ● ● ● ● ● ● UNR4121 UNR4122 UNR4123 UNR4124

UNR4121

Abstract: UNR4122 UNR4123 UNR4124 UNR412X UNR412Y
Contextual Info: Transistors with built-in Resistor UNR4121/4122/4123/4124/412X/412Y UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor Unit: mm • Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

Contextual Info: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N 4123 2N 4124 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage v CBO 40 30 Vdc Emitter-Base Voltage

ultrasonic sensor 200khz

Abstract: 4TPE330MI IHLP4040DZER1R0
Contextual Info: 19-4123; Rev 2; 10/08 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum Stable with Ceramic Output Capacitors Using

4TPE330MI

Abstract: ultrasonic sensor 200khz BUSSMANN 24v 5a smps
Contextual Info: 19-4123; Rev 0; 5/08 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum Stable with Ceramic Output Capacitors Using

UN4121

Abstract: UN4122 UN4123 UN4124 UN412X UN412Y
Contextual Info: Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits ● 3.0±0.2 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping.

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bb53R31 ODBfllSE A IAPX 2N 4123 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for low-power, small-signal audio­ frequency applications for consumer service. P-N-P complements are 2N4125 and 2N4126.

Visonic

Abstract: SMPS 12V, 5V power integrations 4TPE330MI IHLP4040DZER1R0 ultrasonic sensor 200khz
Contextual Info: 19-4123; Rev 2; 10/08 KIT ATION EVALU E L B A AVAIL 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum

ultrasonic sensor 200khz

Abstract: MAX15035
Contextual Info: 19-4123; Rev 1; 7/08 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum Stable with Ceramic Output Capacitors Using

50V 20A step down regulator

Abstract: ultrasonic sensor 200khz visonic nec 3435 SMPS 12V, 5V power integrations 4TPE330MI IHLP4040DZER1R0 ntc thermistor 10k 3435
Contextual Info: 19-4123; Rev 2; 10/08 15A Step-Down Regulator with Internal Switches ♦ Fast Transient Response ♦ Monotonic Power-Up with Precharged Output ♦ Supports Any Output Capacitor No Compensation Required with Polymers/ Tantalum Stable with Ceramic Output Capacitors Using

2N41

Contextual Info: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE _ _ . _ _ Ä ^ ^ _ . _ _ _ _ 2N4123,2N4124 GENERAL P U R P O S E SW ITC H IN G AND AM PLIFIER NPN SILICON EPIT A X IA L T R A N S IS T O R DESCRIPTION 2N 4123, 2N 4124 are NPN transistors, designed fo r general purpose switching and am p lifie r applications, feature

DARLINGTON TRANSISTOR ARRAYS 2A

Abstract: PU4123 hlk2 U412 PU3123 PU4423 h05 diode AH-05
Contextual Info: Power Transistor Arrays PU 3123, PU 4123, PU 4423 PU3123, PU4123, PU4423 P a c k a g e D im e n s io n s PU 3123 Unit: mm 4.2 m a x . 20.5max. Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifier, S w itch in g 0.8 ±0.25 J • F e a tu re s

Contextual Info: 19-4123; Rev 2; 10/08 KIT ATION EVALU E L B A AVAIL 15A Step-Down Regulator with Internal Switches Features The MAX15035 pulse-width modulation PWM controller provides high efficiency, excellent transient response, and high DC-output accuracy. Combined with the internal low on-resistance MOSFETs, the MAX15035 provides a highly efficient and compact solution for small

Contextual Info: MICROPAC INDUSTRIES INC 1SE D • T-^l-bZ bllEbMD 00DDt3fl 5 ■ J V iM . m n > SILICON PHOTO TRANSISTOR 610S2 TYPE GS 4123 O P T O E L E C T R O N IC P R O D U C T S . D IV IS IO N G E N E R A L D E S C R IP T IO N LARGE SENSITIVE AREA TO-46 H ER M ETIC PACKAGE

Contextual Info: 2N 4123 NPN SILICO N IV IIC R O PLANAR EPITAX IA L bvebo C o lle cto r C utoff C urrent JCB0 Em itter Cutoff Current ^EBO Base-Em itter S aturation Voltage DC Current Gain SYMBOL BVCB0 bvceo MICRO FI F P T P O N ir^ I TH l\ V / lllV < 0 1 .1 V . MIN 40 30

2N4123

Abstract: 2N4124 2N4126 2N4125 2n4123 npn transistor
Contextual Info: 2N 4123 PLANAR EPITAXIAL GENERAL DESCRIPTION : The 2N4123 and 2N4124 a re NPN s ilic o n p la n a r e p ita x ia l t r a n s i s t o r s designed fo r g e n e ra l purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re complementary to PNP 2N4125 and 2N4126.

2N4123

Abstract: 2N4124 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4125 2N4126 2n4123 pnp
Contextual Info: 2N 4123 2N4124 NPN SILICO N IV IIC R O PLANAR EPITAX IA L E L -E G T R O IX H C S GENERAL DESCRIPTION ; The 2N4123 and 2N4124 a re NPN s ilic o n p la n ar e p ita x ia l tr a n s is to r s designed fo r g en e ral purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re

Contextual Info: 2N4123 2N4124 M AXIM UM RATINGS Rating S ym bol 2N 4123 2N 4124 C u lle c to r-E m itte r V o lta g e v CEO 30 25 V dc C o lle c to r-B a s e V o lta g e VCBO 40 30 V dc E m itte r-B a s e V o lta g e Vebo 5.0 V dc 'c 200 m Adc Pd 625 5.0 m W cC Pd 1.5 12

2N4123

Abstract: 2N4124 2N41 2n4123 transistor 2N3904 Tj150 TRANSISTOR 2N4124
Contextual Info: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • C o llec to r-E m itte r Voltage: V ceo = 2 N 4 1 23: 30V 2 N 4 1 24: 25V • C o llec to r D issipation : Pc < m a x = 6 2 5 mW ABSOLUTE MAXIMUM RATINGS Ta=25°C) C haracteristic

hFE-200 to-92 npn

Abstract: 2N4123 2N4124 2N4125 2N4126
Contextual Info: 2N4123 _ 9N4194_ PHILIPS INTERNATIONAL SbE D • 711002b D042bb2 T3T ■ PHIN -= I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in pla stic T O -9 2 envelopes, p rim a rily intended fo r low -pow er, sm all-signal a u d io ­ fre qu e n cy a p p lica tio n s fo r consum er service.

Contextual Info: Transistors SOT23 Case Darlington miniReel ^ - . 4 " Order / Number l 7^7 h Type 500 pcs. NPN DarlingJton 73-0013 MMBTA13 MMBTA14 73-0014 PNP Darling ;ton MMBTA63 73-0063 73-0064 MMBTA64 miniBag r | Order * t Number ajHfjjj 100 pcs. SsfliSi Ratings hpE @Ic

Contextual Info: lTELEDYNE SflE D components 0^17^02 GaObSTl fl ULTRA LOW rEC sat SILICON EPITAXIAL JUNCTION NPN/PNP SWITCHING TRANSISTORS 2N6S66 2N6567 7~~ 7 S - - Z J G E O M E T R Y 453, BO TH NPN & PNP T-Jr-z 3 COMPLEMENTARY TYPES 2N6566(NPN), 2N6567(PNP) r EC (sat) 2 Ohms MAX.

ZTX109

Abstract: low noise transistors bc109 BC214P 2N5086 2N5087 2N5209 2N5210 BC550P BC560P
Contextual Info: PNP LOW NOISE TAB LE6 - PNP SILICON PLANAR LOW NOISE TRANSISTORS The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage VCE0 ,