40V7177B Search Results

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Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V7177B P R E U - nc,uic. ^ 3 7 .1 — 7 .7G H z BA N D lO W IN TE R N A LLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 1 7 7 B is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 7 1 — 7 .7